MCP1700
Low Quiescent Current LDO
Features
•
•
•
•
•
•
•
•
•
•
•
•
AEC-Q100 Qualified and PPAP Capable
1.6 µA Typical Quiescent Current
Input Operating Voltage Range: 2.3V to 6.0V
Output Voltage Range: 1.2V to 5.0V
250 mA Output Current for Output
Voltages
2.5V
200 mA Output Current for Output
Voltages < 2.5V
Low Dropout (LDO) Voltage
- 178 mV Typical @ 250 mA for V
OUT
= 2.8V
0.4% Typical Output Voltage Tolerance
Standard Output Voltage Options:
- 1.2V, 1.8V, 2.5V, 2.8V, 2.9V, 3.0V, 3.3V, 5.0V
Stable with 1.0 µF Ceramic Output Capacitor
Short Circuit Protection
Overtemperature Protection
General Description
The MCP1700 is a family of CMOS low dropout (LDO)
voltage regulators that can deliver up to 250 mA of
current while consuming only 1.6 µA of quiescent
current (typical). The input operating range is specified
from 2.3V to 6.0V, making it an ideal choice for two and
three primary cell battery-powered applications, as well
as single cell Li-Ion-powered applications.
The MCP1700 is capable of delivering 250 mA with
only 178 mV of input to output voltage differential
(V
OUT
= 2.8V). The output voltage tolerance of the
MCP1700 is typically ±0.4% at +25°C and ±3%
maximum over the operating junction temperature
range of -40°C to +125°C.
Output voltages available for the MCP1700 range from
1.2V to 5.0V. The LDO output is stable when using only
1 µF output capacitance. Ceramic, tantalum or
aluminum electrolytic capacitors can all be used for
input and output. Overcurrent limit and overtemperature
shutdown provide a robust solution for any application.
Package options include SOT-23, SOT-89, TO-92 and
2x2 DFN-6.
Applications
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Battery-Powered Devices
Battery-Powered Alarm Circuits
Smoke Detectors
CO
2
Detectors
Pagers and Cellular Phones
Smart Battery Packs
Low Quiescent Current Voltage Reference
PDAs
Digital Cameras
Microcontroller Power
Package Types
3-Pin SOT-23
V
IN
3
MCP1700
1
2
MCP1700
1
2
3
3-Pin SOT-89
V
IN
GND V
OUT
GND V
IN
V
OUT
Related Literature
• AN765,
“Using Microchip’s Micropower LDOs”
(DS00765), Microchip Technology Inc., 2002
• AN766,
“Pin-Compatible CMOS Upgrades to
BiPolar LDOs”
(DS00766),
Microchip Technology Inc., 2002
• AN792,
“A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”
(DS00792), Microchip Technology Inc., 2001
3-Pin TO-92
V
IN
1
MCP1700
2x2 DFN-6*
6 V
OUT
EP
7
5 NC
4 NC
1 2 3
NC 2
GND 3
GND V
IN
V
OUT
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
2005-2018 Microchip Technology Inc.
DS20001826E-page 1
MCP1700
Functional Block Diagrams
MCP1700
V
IN
V
OUT
Error Amplifier
+V
IN
Voltage
Reference
-
+
Overcurrent
Overtemperature
GND
Typical Application Circuits
MCP1700
GND
V
OUT
1.8V
I
OUT
150 mA
V
IN
V
OUT
C
OUT
1 µF Ceramic
V
IN
(2.3V to 3.2V)
C
IN
1 µF Ceramic
2005-2018 Microchip Technology Inc.
DS20001826E-page 2
MCP1700
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only, and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings †
V
DD
............................................................................................+
6.5V
All inputs and outputs w.r.t. ......... (V
SS
- 0.3V) to (V
IN
+ 0.3V)
Peak Output Current .................................... Internally Limited
Storage Temperature ....................................-65°C to +150°C
Maximum Junction Temperature ................................... 150°C
Operating Junction Temperature...................-40°C to +125°C
ESD protection on all pins (HBM;MM)
4 kV;
400V
DC CHARACTERISTICS
Electrical Characteristics:
Unless otherwise specified, all limits are established for V
IN
= V
R
+ 1V, I
LOAD
= 100 µA,
C
OUT
= 1 µF (X7R), C
IN
= 1 µF (X7R), T
A
= +25°C.
Boldface
type applies for junction temperatures, T
J
(Note
6)
of -40°C to +125°C.
Parameters
Input Operating
Voltage
Input Quiescent
Current
Maximum Output
Current
Output Short
Circuit Current
Output Voltage
Regulation
V
OUT
Temperature
Coefficient
Line Regulation
Load Regulation
Sym.
V
IN
I
q
I
OUT_mA
I
OUT_SC
Min.
2.3
—
250
200
—
Typ.
—
1.6
—
—
408
Max.
6.0
4
—
—
—
Units
V
µA
mA
mA
Note 1
I
L
= 0 mA, V
IN
= V
R
+ 1V
For V
R
2.5V
For V
R
2.5V
V
IN
= V
R
+ 1V, V
OUT
= GND
Current (peak current) measured 10 ms
after short is applied.
Note 2
Note 3
(V
R
+ 1)V
V
IN
6V
I
L
= 0.1 mA to 250 mA for V
R
2.5V
I
L
= 0.1 mA to 200 mA for V
R
2.5V
Note 4
I
L
= 250 mA,
(Note
1, Note 5)
I
L
= 200 mA,
(Note
1, Note 5)
10% V
R
to 90% V
R
V
IN
= 0V to 6V,
R
L
= 50 resistive
Conditions
Input/Output Characteristics
V
OUT
TCV
OUT
V
OUT
/
(V
OUT
XV
IN
)
V
R
- 2.0%
V
R
- 3.0%
—
-1.0
-1.5
V
R
± 0.4%
50
±0.75
±1.0
V
R
+ 2.0%
V
R
+ 3.0%
—
+1.0
+1.5
V
ppm/°C
%/V
%
V
OUT
/V
OUT
V
IN
- V
OUT
V
IN
- V
OUT
T
R
Dropout Voltage
V
R
2.5V
Dropout Voltage
V
R
2.5V
Output Rise Time
Note 1:
2:
3:
4:
5:
6:
—
—
—
178
150
500
350
350
—
mV
mV
µs
7:
The minimum V
IN
must meet two conditions: V
IN
2.3V and V
IN
V
R
+ 3.0%
V
DROPOUT
.
V
R
is the nominal regulator output voltage. For example: V
R
= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 2.9V, 3.0V, 3.3V, 4.0V, 5.0V.
The input voltage V
IN
= V
R
+ 1.0V; I
OUT
= 100 µA.
TCV
OUT
= (V
OUT-HIGH
- V
OUT-LOW
) *10
6
/ (V
R
*
Temperature),
V
OUT-HIGH
= highest voltage measured over the
temperature range. V
OUT-LOW
= lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a V
R
+ 1V differential applied.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e. T
A
, T
J
,
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
2005-2018 Microchip Technology Inc.
DS20001826E-page 3
MCP1700
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics:
Unless otherwise specified, all limits are established for V
IN
= V
R
+ 1V, I
LOAD
= 100 µA,
C
OUT
= 1 µF (X7R), C
IN
= 1 µF (X7R), T
A
= +25°C.
Boldface
type applies for junction temperatures, T
J
(Note
6)
of -40°C to +125°C.
Parameters
Output Noise
Power Supply
Ripple Rejection
Ratio
Thermal
Shutdown
Protection
Note 1:
2:
3:
4:
5:
6:
Sym.
e
N
PSRR
Min.
—
—
Typ.
3
44
Max.
—
—
Units
dB
Conditions
f = 100 Hz, C
OUT
= 1 µF, I
L
= 50 mA,
V
INAC
= 100 mV pk-pk, C
IN
= 0 µF,
V
R
= 1.2V
V
IN
= V
R
+ 1V, I
L
= 100 µA
µV/(Hz)
1/2
I
L
= 100 mA, f = 1 kHz, C
OUT
= 1 µF
T
SD
—
140
—
°C
7:
The minimum V
IN
must meet two conditions: V
IN
2.3V and V
IN
V
R
+ 3.0%
V
DROPOUT
.
V
R
is the nominal regulator output voltage. For example: V
R
= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 2.9V, 3.0V, 3.3V, 4.0V, 5.0V.
The input voltage V
IN
= V
R
+ 1.0V; I
OUT
= 100 µA.
TCV
OUT
= (V
OUT-HIGH
- V
OUT-LOW
) *10
6
/ (V
R
*
Temperature),
V
OUT-HIGH
= highest voltage measured over the
temperature range. V
OUT-LOW
= lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a V
R
+ 1V differential applied.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e. T
A
, T
J
,
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise specified, all limits are established for V
IN
= V
R
+ 1V, I
LOAD
= 100 µA,
C
OUT
= 1 µF (X7R), C
IN
= 1 µF (X7R), T
A
= +25°C.
Boldface
type applies for junction temperatures, T
J
(Note
1)
of -40°C to +125°C.
Parameters
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistance
Thermal Resistance, 2x2 DFN
JA
JC(Top)
JC(Bottom)
—
—
—
—
—
—
—
—
—
—
—
91
286
28.57
8.95
212
139
11.95
6.15
104
74
30
—
—
—
—
—
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
J
T
A
-40
-40
-65
+125
+125
+150
°C
°C
°C
Sym.
Min.
Typ.
Max.
Units
Conditions
EIA/JEDEC
®
JESD51-7
FR-4 4-Layer Board
JT
Thermal Resistance, SOT-23
JA
JC(Top)
JC(Bottom)
EIA/JEDEC JESD51-7
FR-4 4-Layer Board
JT
Thermal Resistance, SOT-89
JA
JC(Top)
EIA/JEDEC JESD51-7
FR-4 4-Layer Board
JT
Note 1:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e. T
A
, T
J
,
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
2005-2018 Microchip Technology Inc.
DS20001826E-page 4
MCP1700
TEMPERATURE SPECIFICATIONS (CONTINUED)
Electrical Characteristics:
Unless otherwise specified, all limits are established for V
IN
= V
R
+ 1V, I
LOAD
= 100 µA,
C
OUT
= 1 µF (X7R), C
IN
= 1 µF (X7R), T
A
= +25°C.
Boldface
type applies for junction temperatures, T
J
(Note
1)
of -40°C to +125°C.
Parameters
Thermal Resistance, TO-92
Note 1:
Sym.
JA
JC(Top)
Min.
—
—
Typ.
92
74
Max.
—
—
Units
°C/W
°C/W
Conditions
EIA/JEDEC JESD51-7
FR-4 4-Layer Board
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e. T
A
, T
J
,
JA
). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
2005-2018 Microchip Technology Inc.
DS20001826E-page 5
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