VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
www.vishay.com
Vishay Semiconductors
AAP Gen 7 (TO-240AA) Power Modules
Thyristor/Diode and Thyristor/Thyristor, 27 A
FEATURES
• High voltage
• Industrial standard package
• UL approved file E78996
• Low thermal resistance
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
ADD-A-PAK
BENEFITS
PRIMARY CHARACTERISTICS
I
T(AV)
or I
F(AV)
Type
Package
27 A
Modules - thyristor, standard
AAP Gen 7 (TO-240AA)
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• Up to 1600 V
• High surge capability
• Easy mounting on heatsink
MECHANICAL DESCRIPTION
The AAP Gen 7 (TO-240AA), new generation of APP module,
combines the excellent thermal performances obtained by
the usage of exposed direct bonded copper substrate, with
advanced compact simple package solution and simplified
internal structure with minimized number of interfaces.
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
or I
F(AV)
I
O(RMS)
I
TSM,
I
FSM
I
2
t
I
2
t
V
RRM
T
Stg
T
J
Range
CHARACTERISTICS
85 °C
As AC switch
50 Hz
60 Hz
50 Hz
60 Hz
VALUES
27
60
400
420
800
730
8000
400 to 1600
-40 to +125
-40 to +125
kA
2
s
kA
2
s
V
°C
°C
A
UNITS
Revision: 26-Jul-2018
Document Number: 94629
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
www.vishay.com
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
06
08
VS-VSK.26
10
12
14
16
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
400
600
800
1000
1200
1400
1600
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
500
700
900
1100
1300
1500
1700
V
DRM
, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
400
600
800
1000
1200
1400
1600
15
I
RRM,
I
DRM
AT 125 °C
mA
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
Maximum continuous RMS on-state current,
as AC switch
SYMBOL
I
T(AV)
I
F(AV)
I
O(RMS)
t = 10 ms
Maximum peak, one-cycle non-repetitive
on-state or forward current
I
TSM
or
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Maximum value or threshold voltage
Maximum value of on-state
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of rise of
turned on current
Maximum holding current
Maximum latching current
Notes
(1)
I
2
t for time t = I
2
t
x
t
x
x
(2)
Average power = V
2
T(TO)
x I
T(AV)
+ r
t
x (I
T(RMS)
)
(3)
16.7 % x
x I
AV
< I <
x I
AV
(4)
I >
x I
AV
I
2
t
(1)
V
T(TO)
r
t
(2)
(2)
TEST CONDITIONS
180° conduction, half sine wave,
T
C
= 85 °C
or
VALUES
27
UNITS
I
(RMS)
I
(RMS)
60
A
400
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal
half wave,
initial T
J
= T
J
maximum
420
335
350
800
Initial T
J
= T
J
maximum
730
560
510
8000
0.86
1.09
9.58
7.31
1.65
150
200
400
A
2
s
t = 0.1 ms to 10 ms, no voltage reapplied
T
J
= T
J
maximum
Low level
(3)
High level
(4)
Low level
(3)
High level
(4)
I
TM
=
x I
T(AV)
I
FM
=
x I
F(AV)
T
J
= T
J
maximum
T
J
= T
J
maximum
T
J
= 25 °C
A
2
s
V
m
V
TM
V
FM
dI/dt
I
H
I
L
V
A/μs
T
J
= 25 °C, from 0.67 V
DRM
,
I
TM
=
x I
T(AV)
, I
g
= 500 mA, t
r
< 0.5 μs, t
p
> 6 μs
T
J
= 25 °C, anode supply = 6 V,
resistive load, gate open circuit
T
J
= 25 °C, anode supply = 6 V, resistive load
mA
Revision: 26-Jul-2018
Document Number: 94629
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
-V
GM
T
J
= -40 °C
Maximum gate voltage required to trigger
V
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= -40 °C
Maximum gate current required to trigger
I
GT
V
GD
I
GD
T
J
= 25 °C
T
J
= 125 °C
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
T
J
= 125 °C, rated V
DRM
applied
T
J
= 125 °C, rated V
DRM
applied
Anode supply = 6 V
resistive load
Anode supply = 6 V
resistive load
TEST CONDITIONS
VALUES
10
2.5
2.5
10
4.0
2.5
1.7
270
150
80
0.25
6
V
mA
mA
V
UNITS
W
A
BLOCKING
PARAMETER
Maximum peak reverse and off-state
leakage current at V
RRM
, V
DRM
Maximum RMS insulation voltage
Maximum critical rate of rise of off-state voltage
SYMBOL
I
RRM,
I
DRM
V
INS
dV/dt
TEST CONDITIONS
T
J
= 125 °C, gate open circuit
50 Hz
T
J
= 125 °C, linear to 0.67 V
DRM
VALUES
15
3000 (1 min)
3600 (1 s)
1000
UNITS
mA
V
V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating and storage
temperature range
Maximum internal thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink per module
to heatsink
Mounting torque ± 10 %
busbar
Approximate weight
Case style
JEDEC
®
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
TEST CONDITIONS
VALUES
-40 to +125
0.76
°C/W
0.1
4
Nm
3
75
2.7
g
oz.
UNITS
°C
AAP Gen 7 (TO-240AA)
R
CONDUCTION PER JUNCTION
DEVICES
VSK.26..
SINE HALF WAVE CONDUCTION
180°
0.212
120°
0.258
90°
0.330
60°
0.466
30°
0.72
180°
0.166
RECTANGULAR WAVE CONDUCTION
120°
0.276
90°
0.357
60°
0.482
30°
0.726
UNITS
°C/W
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 26-Jul-2018
Document Number: 94629
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
www.vishay.com
Vishay Semiconductors
Maximum average on-state power loss (W)
Maximum allowable case temperature (°C)
130
RthJC (DC) = 0.76°C/W
60
50
40
30
20
10
Per leg, Tj = 125°C
120
180°
120°
90°
60°
30°
110
DC
RMS limit
100
180°
120°
90°
60°
30°
90
80
0
5
10
15
20
25
30
Average on-state current (A)
0
0
10
20
30
40
50
Average on-state current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
Maximum allowable case temperature (°C)
130
Peak half sine wave on-state current (A)
RthJC (DC) = 0.76 °C/W
400
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
120
350
110
300
100
90
DC
180°
120°
90°
60°
30°
250
200
Per leg
80
0
10
20
30
40
50
Average on-state current (A)
150
1
10
100
Number of equal amplitude half cycle current pulses (N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum average on-state power loss (W)
50
Peak half sine wave on-state current (A)
180°
120°
90°
60°
30°
400
Maximum Non-repetitive Surge
Current. Control
of conduction may not be maintained.
Versus Pulse Train Duration
Initial Tj = 125°C
No Voltage Reapplied
Rated Vrrm reapplied
40
350
30
RMS limit
20
300
250
10
Per leg, Tj = 125°C
0
0
5
10
15
20
25
30
Average on-state current (A)
200
Per leg
150
0.01
0.1
Pulse train duration (s)
1
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 26-Jul-2018
Document Number: 94629
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
www.vishay.com
100
Maximum total on-state power loss (W)
Vishay Semiconductors
RthSA = 0.1 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
2 °C/W
3 °C/W
4 °C/W
8 °C/W
90
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
0
VSK.26 Series
Per module
Tj = 125°C
180°
120°
90°
60°
30°
20
40
60
80
100 120 140
Total RMS output current (A)
Maximum allowable ambient temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
250
Maximum total power loss (W)
180°
(sine)
180°
(rect)
∼
200
150
RthSA = 0.1 °C/W
0.3 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
3 °C/W
8 °C/W
100
50
2 x VSK.26 Series
single phase bridge connected
Tj = 125°C
0
0
10
20
30
40
50
0
60
20
40
60
80
100 120 140
Total output current (A)
Maximum allowable ambient temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
300
Maximum total power loss (W)
250
200
150
100
50
0
0
20
40
60
3 x VSK.26 Series
three phase bridge connected
Tj = 125°C
120°
(rect)
RthSA = 0.1 °C/W
0.3 °C/W
0.4 °C/W
0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
3 °C/W
0
80
20
40
60
80
100 120 140
Total output current (A)
Maximum allowable ambient temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
Revision: 26-Jul-2018
Document Number: 94629
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
