d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S16-1760-Rev. A, 05-Sep-16
Document Number: 77783
1
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJA00EP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V
V
GS
= 0 V
On-State Drain Current
a
I
D(on)
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 20
I
D
1.5 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
GS
= 10 V
V
DS
= 30 V, I
D
= 1.5 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
0.23
-
-
-
-
1300
550
28
20
6
3
0.5
13
3
23
22
1700
750
40
35
-
-
0.8
25
10
40
40
ns
nC
pF
g
fs
V
DS
= 60 V
V
DS
= 60 V, T
J
= 125 °C
V
DS
= 60 V, T
J
= 175 °C
V
DS
5 V
I
D
= 10 A
I
D
= 10 A, T
J
= 125 °C
I
D
= 10 A, T
J
= 175 °C
60
2.5
-
-
-
-
30
-
-
-
-
-
3.0
-
-
-
-
-
0.0105
-
-
36
-
3.5
± 100
1
50
150
-
0.0130
0.0208
0.0255
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 10 A
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
Forward Voltage
I
SM
V
SD
I
F
= 10 A, V
GS
= 0 V
-
-
-
0.85
84
1.2
A
V
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1760-Rev. A, 05-Sep-16
Document Number: 77783
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQJA00EP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
100
V
GS
= 10 V thru 6 V
Vishay Siliconix
Axis Title
10000
70
10000
80
2nd line
I
D
- Drain Current (A)
V
GS
= 5 V
56
1000
1st line
2nd line
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
100
14
V
GS
= 4 V
T
C
= 125 °C
T
C
= -55 °C
60
42
40
100
20
28
T
C
= 25 °C
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
100
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.025
Axis Title
10000
2nd line
g
fs
- Transconductance (S)
80
T
C
= 25 °C
T
C
= -55 °C
0.020
1000
V
GS
= 10 V
1000
1st line
2nd line
40
T
C
= 125 °C
0.010
100
0.005
100
20
0
0
6
12
18
24
30
I
D
- Drain Current (A)
2nd line
10
0.000
0
16
32
48
64
80
I
D
- Drain Current (A)
2nd line
10
Transconductance
On-Resistance vs. Drain Current
Axis Title
1500
C
iss
Axis Title
10000
2nd line
V
GS
- Gate-to-Source Voltage (V)
10
I
D
= 1.5 A
V
DS
= 30 V
10000
1200
2nd line
C - Capacitance (pF)
1000
1st line
2nd line
900
8
1000
1st line
2nd line
100
2
10
0
5
10
15
20
25
Q
g
- Total Gate Charge (nC)
2nd line
6
600
C
oss
4
100
300
C
rss
0
0
15
30
45
60
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
Capacitance
Gate Charge
S16-1760-Rev. A, 05-Sep-16
Document Number: 77783
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
60
0.015
SQJA00EP
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
2.0
2nd line
R
DS(on)
- On-Resistance (Normalized)
I
D
= 5 A
V
GS
= 10 V
Vishay Siliconix
Axis Title
10000
100
10000
1.7
2nd line
I
S
- Source Current (A)
1000
1st line
2nd line
1.4
10
T
J
= 150 °C
1000
1st line
2nd line
T
J
= 25 °C
1
1.1
100
0.8
0.1
100
0.01
0.5
-50 -25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
2nd line
10
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
0.10
10000
0.5
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.08
1000
1st line
2nd line
0.06
2nd line
V
GS(th)
Variance (V)
0.1
1000
I
D
= 5 mA
0.04
100
T
J
= 150 °C
-0.7
100
I
D
= 250 μA
0.02
T
J
= 25 °C
-1.1
0.00
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
-1.5
-50 -25
0
25
50
75 100 125 150 175
T
J
- Temperature (°C)
2nd line
10
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
79
2nd line
V
DS
- Drain-to-Source Voltage (V)
I
D
= 1 mA
10000
76
1000
1st line
2nd line
73
70
100
67
64
-50 -25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
2nd line
10
Drain Source Breakdown vs. Junction Temperature
S16-1760-Rev. A, 05-Sep-16
Document Number: 77783
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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