MUR420S - MUR460S
Taiwan Semiconductor
4A, 200V - 600V Surface Mount Ultrafast Power Rectifier
FEATURES
●
●
●
●
●
Glass passivated junction
Ideal for automated placement
Built-in strain relief
Ultrafast recovery time for high efficiency
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
VALUE
4
200 - 600
75
175
UNIT
A
V
A
°C
DO-214AB (SMC)
Single die
APPLICATIONS
● High frequency rectification
● Freewheeling application
● Switching mode converters and inverters in computer, automotive
and telecommunication.
Configuration
MECHANICAL DATA
●
●
●
●
Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.25 g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms single
half sine-wave superimposed on rated
load per diode
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL
MUR420S
MUR420S
200
140
200
MUR440S
MUR440S
400
280
400
4
75
- 55 to +175
- 55 to +175
MUR460S
MUR460S
600
420
600
V
V
V
A
A
°C
°C
UNIT
1
Version:D1708
MUR420S - MUR460S
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance per diode
Junction-to-case thermal resistance per diode
SYMBOL
R
ӨJA
R
ӨJC
LIMIT
45
8.5
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
MUR420S
MUR440S
MUR460S
MUR420S
MUR440S
MUR460S
MUR420S
MUR440S
MUR460S
MUR420S
MUR440S
MUR460S
MUR420S
MUR440S
MUR460S
CONDITIONS
I
F
= 4A, T
J
= 25°C
SYMBOL
V
F
TYP.
-
-
-
I
F
= 4A, T
J
= 150°C
V
F
-
-
T
J
= 25°C
I
R
-
-
T
J
= 150°C
1 MHz, V
R
=4.0V
I
F
=0.5A , I
R
=1.0A
I
RR
=0.25A
I
R
C
J
t
rr
-
65
-
-
MAX.
0.875
1.250
0.710
1.050
5
10
150
250
-
25
50
UNIT
V
V
V
V
μA
μA
μA
μA
pF
ns
ns
Forward voltage per diode
(1)
Reverse current @ rated V
R
(2)
per diode
Junction capacitance
Reverse recovery time
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2
Version:D1708
MUR420S - MUR460S
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
6
AVERAGE FORWARD CURRENT (A)
JUNCTION CAPACITANCE (pF)
100
Fig.2 Typical Junction Capacitance
4
10
2
RESISTIVE OR
INDUCTIVE LOAD
WITH HEATSINK
0
0
25
50
75
100
125
150
175
f=1.0MHz
Vsig=50m Vp-p
1
0.1
1
10
100
REVERSE VOLTAGE (V)
CASE TEMPERATURE (
°
C)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
100
100 10
Fig.4 Typical Forward Characteristics
MUR460S
1
10
0.1
10
T
J
=150
°
C
UF1DLW
T
J
=125°C
T
J
=150
°
C
1
T
J
=25°C
(A)
T
J
=25
°
C
Pulse width
0.6
0.8
0.7
0.8
1.2
0.9
1.6
1
1.1
2
1.2
0.1
1
0.01
0.01
T
J
=25
°
C
0.001
0.1
0
0.3
0.4
0.4
0.5
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:D1708
MUR420S - MUR460S
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
PEAK FORWARD SURGE CURRENT (A)
100
75
50
25
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram
5
Version:D1708
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