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LT1161CN#PBF

产品描述门驱动器 Quad Hi Volt Hi Side N-Ch MOSFET Drvr
产品类别模拟混合信号IC    驱动程序和接口   
文件大小169KB,共12页
制造商ADI(亚德诺半导体)
官网地址https://www.analog.com
标准
下载文档 详细参数 选型对比 全文预览

LT1161CN#PBF概述

门驱动器 Quad Hi Volt Hi Side N-Ch MOSFET Drvr

LT1161CN#PBF规格参数

参数名称属性值
Brand NameAnalog Devices Inc
是否无铅含铅
是否Rohs认证符合
厂商名称ADI(亚德诺半导体)
包装说明DIP, DIP20,.3
针数20
制造商包装代码05-08-1510 (N20)
Reach Compliance Codecompliant
高边驱动器YES
输入特性GATED
接口集成电路类型BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码R-PDIP-T20
JESD-609代码e3
长度26.92 mm
湿度敏感等级1
功能数量4
端子数量20
最高工作温度70 °C
最低工作温度
输出极性TRUE
封装主体材料PLASTIC/EPOXY
封装代码DIP
封装等效代码DIP20,.3
封装形状RECTANGULAR
封装形式IN-LINE
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
座面最大高度4.1 mm
最大压摆率6.5 mA
最大供电电压48 V
最小供电电压12 V
标称供电电压24 V
表面贴装NO
技术BIPOLAR
温度等级COMMERCIAL
端子面层Matte Tin (Sn)
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
断开时间200 µs
接通时间400 µs
宽度7.62 mm
Base Number Matches1

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LT1161
Quad Protected High-Side
MOSFET Driver
FEATURES
DESCRIPTIO
8V to 48V Power Supply Range
Protected from – 15V to 60V Supply Transients
Fully Enhances N-Channel MOSFET Switches
Individual Short-Circuit Protection
Individual Automatic Restart Timers
Programmable Current Limit, Delay Time, and
Auto-Restart Period
Voltage-Limited Gate Drive
Defaults to OFF State with Open Input
Flowthrough Input to Output Pinout
Available in 20-Lead DIP or SOL Package
The LT1161 is a quad high-side gate driver allowing the
use of low cost N-channel power MOSFETs for high-side
switching applications. It has four independent switch
channels, each containing a completely self-contained
charge pump to fully enhance an N-channel MOSFET
switch with no external components.
Also included in each switch channel is a drain sense
comparator that is used to sense switch current. When a
preset current level is exceeded, the switch is turned off.
The switch remains off for a period of time set by an
external timing capacitor and then automatically attempts
to restart. If the fault is still present, this cycle repeats until
the fault is removed, thus protecting the MOSFET.
The LT1161 has been specifically designed for harsh
operating environments such as industrial, avionics, and
automotive applications where poor supply regulation
and/or transients may be present. The device will not
sustain damage from supply voltages of –15V to 60V.
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
APPLICATIO S
Industrial Control
Avionics Systems
Automotive Switches
Stepper Motor and DC Motor Control
Electronic Circuit Breaker
TYPICAL APPLICATIO
24V
C
T
0.1µF
0.1µF
0.1µF
0.1µF
V
+
T1
T2
T3
T4
IN1
IN2
IN3
IN4
GND
GND
LT1161
V
+
+
DS1
G1
DS2
G2
DS3
G3
DS4
G4
R
S
0.01Ω
IRFZ34
50µF
50V
0.50
0.45
Switch Drop vs Load Current
TOTAL DROP (V)
0.01Ω
IRFZ34
0.01Ω
IRFZ34
0.01Ω
IRFZ34
LOAD
#1
0.40
0.35
0.30
0.25
0.20
0.15
LOAD
#2
INPUTS
LOAD
#3
0.10
0.05
0
0
1
3
2
LOAD CURRENT (A)
4
5
1161 TA01
LOAD
#4
1161 F01
Figure 1. Protected Quad High-Side Switch
1161fa
U
U
U
1

LT1161CN#PBF相似产品对比

LT1161CN#PBF LT1161ISW#TR LT1161CN LT1161IN LT1161IN#PBF LT1161ISW#TRPBF LT1161CSW#TR LT1161CSW#PBF LT1161CSW#TRPBF
描述 门驱动器 Quad Hi Volt Hi Side N-Ch MOSFET Drvr Gate Drivers LT1161 - Quad Protected High-Side MOSFET Driver Gate Drivers LT1161 - Quad Protected High-Side MOSFET Driver Gate Drivers LT1161 - Quad Protected High-Side MOSFET Driver Gate Drivers Quad Hi Volt Hi Side N-Ch MOSFET Drvr 门驱动器 Quad Hi Volt Hi Side N-Ch MOSFET Drvr 门驱动器 LT1161 - Quad Protected High-Side MOSFET Driver 门驱动器 Quad Hi Volt Hi Side N-Ch MOSFET Drvr 门驱动器 Quad Hi Volt Hi Side N-Ch MOSFET Drvr
是否Rohs认证 符合 不符合 不符合 不符合 符合 符合 不符合 符合 符合
厂商名称 ADI(亚德诺半导体) ADI(亚德诺半导体) ADI(亚德诺半导体) ADI(亚德诺半导体) ADI(亚德诺半导体) ADI(亚德诺半导体) ADI(亚德诺半导体) ADI(亚德诺半导体) ADI(亚德诺半导体)
包装说明 DIP, DIP20,.3 SOP, SOP20,.4 DIP-20 DIP-20 DIP, SOP, SOP20,.4 SOP, SOP, SOP20,.4 SOP,
Reach Compliance Code compliant not_compliant not_compliant not_compliant compliant compliant not_compliant compliant compliant
高边驱动器 YES YES YES YES YES YES YES YES YES
接口集成电路类型 BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码 R-PDIP-T20 R-PDSO-G20 R-PDIP-T20 R-PDIP-T20 R-PDIP-T20 R-PDSO-G20 R-PDSO-G20 R-PDSO-G20 R-PDSO-G20
JESD-609代码 e3 e0 e0 e0 e3 e3 e0 e3 e3
湿度敏感等级 1 1 1 1 1 1 1 1 1
功能数量 4 4 4 4 4 4 4 4 4
端子数量 20 20 20 20 20 20 20 20 20
最高工作温度 70 °C 85 °C 70 °C 85 °C 85 °C 85 °C 70 °C 70 °C 70 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP SOP DIP DIP DIP SOP SOP SOP SOP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE SMALL OUTLINE IN-LINE IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED 235 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 260 235 260 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 4.1 mm 2.642 mm 4.1 mm 4.1 mm 3.937 mm 2.642 mm 2.642 mm 2.642 mm 2.642 mm
最大供电电压 48 V 48 V 48 V 48 V 48 V 48 V 48 V 48 V 48 V
最小供电电压 12 V 12 V 12 V 12 V 12 V 12 V 12 V 12 V 12 V
标称供电电压 24 V 24 V 24 V 24 V 24 V 24 V 24 V 24 V 24 V
表面贴装 NO YES NO NO NO YES YES YES YES
温度等级 COMMERCIAL INDUSTRIAL COMMERCIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Matte Tin (Sn) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) MATTE TIN Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn) MATTE TIN (SN)
端子形式 THROUGH-HOLE GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING GULL WING GULL WING
端子节距 2.54 mm 1.27 mm 2.54 mm 2.54 mm 2.54 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED 20 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 30 20 30 30
断开时间 200 µs 200 µs 200 µs 200 µs 200 µs 200 µs 200 µs 200 µs 200 µs
接通时间 400 µs 400 µs 400 µs 400 µs 400 µs 400 µs 400 µs 400 µs 400 µs
宽度 7.62 mm 7.49 mm 7.62 mm 7.62 mm 7.62 mm 7.49 mm 7.49 mm 7.49 mm 7.49 mm
Brand Name Analog Devices Inc - - - Analog Devices Inc Analog Devices Inc - Analog Devices Inc Analog Devices Inc
是否无铅 含铅 - - - 含铅 含铅 - 含铅 含铅
针数 20 - - - 20 20 - 20 20
制造商包装代码 05-08-1510 (N20) - - - 05-08-1510 (N20) 05-08-1620 (SW20) - 05-08-1620 (SW20) 05-08-1620 (SW20)
输入特性 GATED GATED GATED GATED SCHMITT TRIGGER GATED - GATED -
长度 26.92 mm 12.8015 mm 26.92 mm 26.92 mm - 12.8015 mm 12.8015 mm 12.8015 mm 12.8015 mm
输出极性 TRUE TRUE TRUE TRUE TRUE TRUE - TRUE -
封装等效代码 DIP20,.3 SOP20,.4 DIP20,.3 DIP20,.3 - SOP20,.4 - SOP20,.4 -
最大压摆率 6.5 mA 6.5 mA 6.5 mA 6.5 mA - 6.5 mA - 6.5 mA -
技术 BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR BIPOLAR - BIPOLAR -
Base Number Matches 1 - - - 1 1 - 1 1

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