MCP6271/2/3/4/5
170 µA, 2 MHz Rail-to-Rail Op Amp
Features
•
•
•
•
•
•
•
•
Gain Bandwidth Product: 2 MHz (typ.)
Supply Current: I
Q
= 170 µA (typ.)
Supply Voltage: 2.0V to 5.5V
Rail-to-Rail Input/Output
Extended Temperature Range: -40°C to +125°C
Available in Single, Dual and Quad Packages
Single with Chip Select (CS) (MCP6273)
Dual with Chip Select (CS) (MCP6275)
Description
The Microchip Technology Inc. MCP6271/2/3/4/5 family
of operational amplifiers (op amps) provide wide
bandwidth for the current. This family has a 2 MHz Gain
Bandwidth Product (GBWP) and a 65° phase margin.
This family also operates from a single supply voltage
as low as 2.0V, while drawing 170 µA (typ.) quiescent
current. Additionally, the MCP6271/2/3/4/5 supports
rail-to-rail input and output swing, with a common mode
input voltage range of V
DD
+ 300 mV to V
SS
– 300 mV.
This family of operational amplifiers is designed with
Microchip’s advanced CMOS process.
The MCP6275 has a Chip Select input (CS) for dual op
amps in an 8-pin package and is manufactured by
cascading two op amps (the output of op amp A
connected to the non-inverting input of op amp B). The
CS input puts the device in Low-power mode.
The MCP6271/2/3/4/5 family operates over the
Extended Temperature Range of -40°C to +125°C, with
a power supply range of 2.0V to 5.5V.
Applications
•
•
•
•
•
•
Automotive
Portable Equipment
Photodiode Amplifier
Analog Filters
Notebooks and PDAs
Battery-Powered Systems
Available Tools
• SPICE Macro Model (at www.microchip.com)
• FilterLab
®
Software (at www.microchip.com)
Package Types
MCP6271
PDIP, SOIC, MSOP
NC 1
V
IN_
2
V
IN
+ 3
V
SS
4
-
+
8 NC
7 V
DD
6 V
OUT
5 NC
V
OUT
1
V
SS
2
V
IN
+ 3
-
4 V
IN
–
+
MCP6271
SOT-23-5
5 V
DD
MCP6271R
SOT-23-5
V
OUT
1
V
IN
+ 3
-
V
DD
2
+
5 V
SS
4 V
IN
–
MCP6272
PDIP, SOIC, MSOP
V
OUTA
1
V
INA_
2
V
INA
+ 3
V
SS
4
- +
+ -
8 V
DD
7 V
OUTB
6 V
INB_
5 V
INB
+
MCP6273
PDIP, SOIC, MSOP
NC 1
V
IN
_
MCP6273
SOT-23-6
V
OUT
1
V
SS
2
V
IN
+ 3
6 V
DD
5 CS
_
4 V
IN
MCP6274
PDIP, SOIC, TSSOP
V
OUTA
1
V
INA
_
MCP6275
PDIP, SOIC, MSOP
V
OUTA
/V
INB
+ 1
V
INA_
2
- +
+ -
8 CS
-
+
7 V
DD
6 V
OUT
5 NC
14
V
OUTD
2
2
V
IN
+ 3
V
SS
4
-
- + + -
13
V
IND_
12
V
IND
+
11
V
SS
10
V
INC
+
8 V
DD
7 V
OUTB
_
6 V
INB
+
V
INA
+
3
V
DD
4
V
INB
+
5
V
INB_
6
V
OUTB
7
V
INA
+ 3
V
SS
4
5 CS
-+ +-
9
V
_
INC
8
V
OUTC
2004 Microchip Technology Inc.
DS21810D-page 1
MCP6271/2/3/4/5
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings †
V
DD
– V
SS
........................................................................7.0V
All Inputs and Outputs ................... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short Circuit Current ................................. Continuous
Current at Input Pins ....................................................±2 mA
Current at Output and Supply Pins ............................±30 mA
Storage Temperature.....................................-65°C to +150°C
Junction Temperature (T
J
) . .........................................+150°C
ESD Protection On All Pins (HBM/MM)
................ ≥
4 kV/400V
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.0V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, R
L
= 10 kΩ
to V
DD
/2 and V
OUT
≈
V
DD
/2.
Parameters
Input Offset
Input Offset Voltage
Input Offset Voltage
(Extended Temperature)
Input Offset Temperature Drift
Power Supply Rejection Ratio
Input Bias Current and Impedance
Input Bias Current
At Temperature
At Temperature
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode (Note 4)
Common Mode Input Range
Common Mode Rejection Ratio
Common Mode Rejection Ratio
Open-Loop Gain
DC Open-Loop Gain (Large Signal)
Output
Maximum Output Voltage Swing
Output Short-Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Note 1:
2:
3:
4:
V
DD
I
Q
2.0
100
—
170
5.5
240
V
µA
I
O
= 0
V
OL
, V
OH
I
SC
V
SS
+ 15
—
—
±25
V
DD
−
15
—
mV
mA
A
OL
90
110
—
dB
V
OUT
= 0.2V to V
DD
– 0.2V,
V
CM
= V
SS,
(Note 1)
V
CMR
CMRR
CMRR
V
SS
−
0.3
70
65
—
85
80
V
DD
+ 0.3
—
—
V
dB
dB
Note 4
V
CM
= -0.3V to 2.5V, V
DD
= 5V
V
CM
= -0.3V to 5.3V, V
DD
= 5V
I
B
I
B
I
B
I
OS
Z
CM
Z
DIFF
—
—
—
—
—
—
±1.0
50
2
±1.0
10
13
||6
10 ||3
13
Sym
Min
Typ
Max
Units
Conditions
V
OS
V
OS
∆V
OS
/∆T
A
PSRR
-3.0
-5.0
—
70
—
—
±1.7
90
+3.0
+5.0
—
—
—
200
5
—
—
—
mV
mV
V
CM
= V
SS
(Note 1)
T
A
= -40°C to +125°C,
V
CM
= V
SS
(Note 1)
µV/°C T
A
= -40°C to +125°C,
V
CM
= V
SS
(Note 1)
dB
pA
pA
nA
pA
Ω||pF
Ω||pF
V
CM
= V
SS
(Note 1)
Note 2
T
A
= +85°C
(Note 2)
T
A
= +125°C
(Note 2)
Note 3
Note 3
Note 3
The MCP6275’s V
CM
for op amp B (pins V
OUTA
/V
INB
+ and V
INB
–) is V
SS
+ 100 mV.
The current at the MCP6275’s V
INB
– pin is specified by I
B
only.
This specification does not apply to the MCP6275’s V
OUTA
/V
INB
+ pin.
The MCP6275’s V
INB
– pin (op amp B) has a common mode range (V
CMR
) of V
SS
+ 100 mV to V
DD
– 100 mV.
The MCP6275’s V
OUTA
/V
INB
+ pin (op amp B) has a voltage range specified by V
OH
and V
OL
.
DS21810D-page 2
2004 Microchip Technology Inc.
MCP6271/2/3/4/5
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.0V to +5.5V, V
SS
= GND,
V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2, R
L
= 10 kΩ to V
DD
/2 and C
L
= 60 pF.
Parameters
AC Response
Gain Bandwidth Product
Phase Margin at Unity-Gain
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
E
ni
e
ni
i
ni
—
—
—
3.5
20
3
—
—
—
µV
P-P
nV/√Hz
fA/√Hz
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
GBWP
PM
SR
—
—
—
2.0
65
0.9
—
—
—
MHz
°
V/µs
Sym
Min
Typ
Max
Units
Conditions
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +2.0V to +5.5V and V
SS
= GND.
Parameters
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 6L-SOT-23
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-MSOP
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Note:
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
—
—
—
—
256
230
85
163
206
70
120
100
—
—
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
-40
-65
—
—
+125
+150
°C
°C
Note
Sym
Min
Typ
Max
Units
Conditions
The Junction Temperature (T
J
) must not exceed the Absolute Maximum specification of +150°C.
2004 Microchip Technology Inc.
DS21810D-page 3
MCP6271/2/3/4/5
MCP6273/MCP6275 CHIP SELECT (CS) SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.0V to +5.5V, V
SS
= GND,
V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2, R
L
= 10 kΩ to V
DD
/2 and C
L
= 60 pF.
Parameters
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current per Amplifier
Amplifier Output Leakage
Dynamic Specifications (Note 1)
CS Low to Valid Amplifier
Output, Turn-on Time
CS High to Amplifier Output
High-Z
Hysteresis
Note 1:
t
ON
—
4
10
µs
CS Low
≤
0.2 V
DD
, G = +1 V/V,
V
IN
= V
DD
/2, V
OUT
= 0.9 V
DD
/2,
V
DD
= 5.0V
CS High
≥
0.8 V
DD
, G = +1 V/V,
V
IN
= V
DD
/2, V
OUT
= 0.1 V
DD
/2
V
DD
= 5V
V
IH
I
CSH
I
SS
—
0.8V
DD
—
—
—
—
0.7
-0.7
0.01
V
DD
2
—
—
V
µA
µA
µA
CS = V
DD
CS = V
DD
CS = V
DD
V
IL
I
CSL
V
SS
—
—
0.01
0.2V
DD
—
V
µA
CS = V
SS
Sym
Min
Typ
Max
Units
Conditions
t
OFF
V
HYST
—
—
0.01
0.6
—
—
µs
V
The input condition (V
IN
) specified applies to both op amp A and B of the MCP6275. The dynamic
specification is tested at the output of op amp B (V
OUTB
).
CS
V
IL
t
ON
V
IH
t
OFF
Hi-Z
-0.7 µA (typ.)
-170 µA (typ.)
0.7 µA (typ.)
10 nA (typ.)
V
OUT
Hi-Z
-0.7 µA (typ.)
I
SS
0.7 µA (typ.)
I
CS
FIGURE 1-1:
Timing Diagram for the
Chip Select (CS) pin on the MCP6273 and
MCP6275.
DS21810D-page 4
2004 Microchip Technology Inc.
MCP6271/2/3/4/5
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.0V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2,
R
L
= 10 kΩ to V
DD
/2 and C
L
= 60 pF.
20%
14%
Percentage of Occurrences
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
Percentage of Occurrences
832 Samples
V
CM
= V
SS
12%
10%
8%
6%
4%
2%
0%
832 Samples
V
CM
= V
SS
T
A
= -40°C to +125°C
0.0
0.6
1.2
1.8
2.4
-3.0
-2.4
-1.8
-1.2
-0.6
3.0
Input Offset Voltage (mV)
FIGURE 2-1:
32%
Input Offset Voltage.
FIGURE 2-4:
24%
Percentage of Occurrences
Percentage of Occurrences
28%
24%
20%
16%
12%
8%
4%
0%
422 Samples
T
A
= +85°C
20%
16%
12%
8%
4%
0%
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
5.5
0
10
20
30
40
50
60
70
80
90
100
Input Bias Current (pA)
Input Bias Current (nA)
FIGURE 2-2:
T
A
= +85°C.
300
V
DD
= 2.0V
Input Bias Current at
FIGURE 2-5:
T
A
= +125°C.
300
V
DD
= 5.5V
Input Bias Current at
Input Offset Voltage (µV)
250
200
150
100
50
0
-50
-100
-0.4
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
Input Offset Voltage (µV)
250
200
150
100
50
0
-50
-100
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
6.0
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
Common Mode Input Voltage (V)
Common Mode Input Voltage (V)
FIGURE 2-3:
Input Offset Voltage vs.
Common Mode Input Voltage at V
DD
= 2.0V.
FIGURE 2-6:
Input Offset Voltage vs.
Common Mode Input Voltage at V
DD
= 5.5V.
2004 Microchip Technology Inc.
DS21810D-page 5
3.0
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10
Input Offset Voltage Drift (µV/°C)
Input Offset Voltage Drift.
422 Samples
T
A
= +125°C
PCB设计
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