VS-3EJU06HM3
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 3 A FRED Pt
®
FEATURES
eSMP®
Series
• Ultrafast recovery time, reduced Q
rr
, and soft
recovery
• 175 °C maximum operating junction temperature
• Low forward voltage drop
• Low leakage current
Top View
Bottom View
SlimSMA
(DO-221AC)
Cathode
Anode
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
DESCRIPTION / APPLICATIONS
State of the art ultrafast recovery rectifiers designed with
optimized performance of forward voltage drop and ultrafast
recovery time, and fast recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
t
rr
T
J
max.
Package
Circuit configuration
3A
600 V
0.99 V
50 ns
175 °C
SlimSMA (DO-221AC)
Single
These devices are intended for use in snubber, output
operation, inverters or as freewheeling diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 117 °C
(1)
T
J
= 25 °C
TEST CONDITIONS
VALUES
600
3
43
-55 to +175
UNITS
V
A
°C
Note
(1)
Device on PCB with 8 mm x 16 mm soldering lands
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
TEST CONDITIONS
I
R
= 100 μA
I
F
= 3 A
I
F
= 3 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
MIN.
600
-
-
-
-
-
TYP.
-
1.15
0.99
-
-
6.2
MAX.
-
1.35
1.2
3
100
-
μA
pF
V
UNITS
Reverse leakage current
Junction capacitance
Revision: 11-Sep-2018
Document Number: 96068
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-3EJU06HM3
www.vishay.com
Vishay Semiconductors
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
MIN.
-
-
-
-
I
F
= 3 A
dI
F
/dt = 500 A/μs
V
R
= 400 V
-
-
-
-
TYP.
45
-
52
82
7.3
10
210
400
MAX.
-
50
-
-
-
-
-
-
A
ns
UNITS
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
t
rr
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Thermal resistance,
junction to lead
Thermal resistance,
junction to ambient
Approximate Weight
Marking device
Case style SlimSMA (DO-221AC)
SYMBOL
T
J
, T
Stg
R
thJL
R
thJA
Device mounted on PCB with 8 mm x 16 mm
soldering lands
Device mounted on PCB with 3 mm x 3 mm
soldering lands
TEST CONDITIONS
MIN.
-55
-
-
TYP.
-
16
115
0.032
0.0011
3U6
MAX.
175
-
°C/W
-
g
oz.
UNITS
°C
I
F
- Instantaneous Forward Current (A)
100
100
T
J
= 175 °C
I
R
- Reverse Current (μA)
10
T
J
= 150 °C
10
T
J
= 175 °C
1
T
J
= 125 °C
0.1
T
J
= 25 °C
0.01
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
0.001
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current
vs. Reverse Voltage
Revision: 11-Sep-2018
Document Number: 96068
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-3EJU06HM3
www.vishay.com
Vishay Semiconductors
160
140
120
125 °C
100
C
T
- Junction Capacitance (pF)
10
t
rr
(ns)
100
80
25 °C
60
40
1
0
100
200
300
400
500
600
20
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
180
500
450
160
400
125 °C
DC
120
Square
wave (D = 0.50)
80 % rated V
R
applied
100
150
See
note
(1)
80
0
1
2
3
4
5
100
100
350
dI
F
/dt (A/μs)
Fig. 6 - Typical Reverse Recovery vs. dI
F
/dt
Allowable Case Temperature (°C)
Q
rr
(nC)
140
300
250
200
25 °C
1000
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
5
RMS limit
dI
F
/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Average Power Loss (W)
4
3
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
2
1
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see Fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
Revision: 11-Sep-2018
Document Number: 96068
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-3EJU06HM3
www.vishay.com
Vishay Semiconductors
1000
Z
thJA
- Thermal Impedance
Junction to Ambient
(°C/W)
100
10
1
0.1
0.001
0.01
0.1
1
10
100
1000
t
1
- Rectangular Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJA
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 11-Sep-2018
Document Number: 96068
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-3EJU06HM3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
8
-
-
-
3
2
E
3
J
4
U
5
06
6
H
7
M3
8
Vishay Semiconductors product
Current rating (3 = 3 A)
Circuit configuration:
E = single diode
-
-
-
-
-
J = SlimSMA package
Process type,
U = ultrafast recovery
Voltage code (06 = 600 V)
H = AEC-Q101 qualified
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-3EJU06HM3/6A
VS-3EJU06HM3/6B
QUANTITY PER REEL
3500
14 000
MINIMUM ORDER QUANTITY
3500
14 000
PACKAGING DESCRIPTION
7" diameter plastic tape and reel
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95571
www.vishay.com/doc?95562
www.vishay.com/doc?88869
Revision: 11-Sep-2018
Document Number: 96068
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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