TSU111, TSU112
Datasheet
Nanopower (900 nA), high accuracy (150 µV) 5 V CMOS operational amplifier
Features
DFN6 1.2x1.3
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SC70-5
TSU111
TSU112
Sub-micro ampere current consumption: Icc = 900 nA typ. at 25 °C
Low offset voltage: 150 µV max. at 25 °C, 235 µV max. over full temperature
range (-40 to 85 °C)
Low noise over 0.1 to 10 Hz bandwidth: 3.6 µVpp
Low supply voltage: 1.5 V to 5.5 V
Rail-to-rail input and output
Gain bandwidth product: 11.5 kHz typ.
Low input bias current: 10 pA max. at 25 °C
High tolerance to ESD: 4 kV HBM
More than 25 years of typical equivalent lifetime supplied by a 220 mA.h
CR2032 coin type Lithium battery
High accuracy without calibration
Tolerance to power supply transient drops
Applications
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Gas sensors: CO, O
2
, and H
2
S
Alarms: PIR sensors
Signal conditioning for energy harvesting and wearable products
Ultra long-life battery-powered applications
Battery current sensing
Active RFID tags
Product status link
TSU111, TSU112
Related products
See
TSU101, TSU102,
and
TSU104
See
TSZ121, TSZ122,
TSZ124
for further
power savings
for increased
accuracy
Description
The
TSU111, TSU112
operational amplifiers (op-amp) offer an ultra low-power
consumption per channel of 900 nA typical and 1.2 µA maximum when supplied by
3.3 V. Combined with a supply voltage range of 1.5 V to 5.5 V, these features allow
the TSU11x to be efficiently supplied by a coin type Lithium battery or a regulated
voltage in low-power applications.
The high accuracy of 150 µV max. and 11.5 kHz gain bandwidth make the TSU11x
ideal for sensor signal conditioning, battery supplied, and portable applications.
DS11846
-
Rev 4
-
May 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
TSU111, TSU112
Package pin connections
1
Package pin connections
Figure 2.
Pin connections for each package (top view)
OUT 1
VCC- 2
IN- 3
6 VCC+
5 NC
4 IN+
DFN6 1.2x1.3
DFN8 2x2
IN+
VCC-
IN-
1
2
3
5
VCC+
4
OUT
MiniSO8
SC70-5
TSU111
1.
The exposed pad of the DFN8 2x2 can be connected to V
CC-
or left floating.
TSU112
DS11846
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Rev 4
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TSU111, TSU112
Absolute maximum ratings and operating conditions
2
Absolute maximum ratings and operating conditions
Table 1.
Absolute maximum ratings (AMR)
Symbol
V
CC
V
id
V
in
I
in
T
stg
T
j
Parameter
Supply voltage
(1)
Differential input voltage
(2)
Input voltage
(3)
Input current
(4)
Storage temperature
Maximum junction temperature
DFN6 1.2x1.3
R
thja
Thermal resistance junction-to-ambient
(5) (6)
SC70-5
DFN8 2x2
MiniSO8
HBM: human body model
(7)
ESD
CDM: charged device model
(8)
Latch-up immunity
(9)
Value
6
±V
CC
(V
CC -
) - 0.2 to (V
CC +
) + 0.2
10
-65 to 150
150
232
205
57
190
4000
1500
200
V
mA
°C/W
mA
°C
V
Unit
1. All voltage values, except the differential voltage are with respect to the network ground terminal.
2. The differential voltage is the non-inverting input terminal with respect to the inverting input terminal.
3. (V
CC+
) - V
in
must not exceed 6 V, V
in
- (V
CC-
) must not exceed 6 V.
4. The input current must be limited by a resistor in-series with the inputs.
5. R
th
are typical values.
6. Short-circuits can cause excessive heating and destructive dissipation.
7. Related to ESDA/JEDEC JS-001 Apr. 2010.
8. Related to JEDEC JESD22-C101-E Dec. 2009.
9. Related to JEDEC JESD78C Sep. 2010.
Table 2.
Operating conditions
Symbol
V
CC
V
icm
T
oper
Parameter
Supply voltage
Common-mode input voltage range
Operating free-air temperature range
Value
1.5 to 5.5
(V
CC-
) - 0.1 to (V
CC+
) + 0.1
-40 to 85
Unit
V
°C
DS11846
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Rev 4
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TSU111, TSU112
Electrical characteristics
3
Electrical characteristics
Table 3.
Electrical characteristics at (V
CC +
) = 1.8 V with (V
CC -
) = 0 V, V
icm
= V
CC
/2, T
amb
= 25 °C, and R
L
= 1 MΩ
connected to V
CC
/2 (unless otherwise specified)
Symbol
Parameter
Conditions
DC performance
V
io
ΔV
io
/ΔT
ΔV
io
I
io
Input offset voltage
Input offset voltage drift
Long-term input offset voltage
drift
Input offset current
(2)
T = 25 °C
-40 °C < T< 85 °C
-40 °C < T< 85 °C
T = 25 °C
(1)
T = 25 °C
-40 °C < T< 85 °C
T = 25 °C
-40 °C < T< 85 °C
T = 25 °C
-40 °C < T< 85 °C
R
L
= 100 kΩ, T = 25 °C
A
vd
Large signal voltage gain,
V
out
= 0.2 V to (V
CC+
) - 0.2 V
R
L
= 100 kΩ,
-40 °C < T< 85 °C
R
L
= 10 kΩ, T = 25 °C
V
OH
High-level output voltage,
(drop from V
CC
+)
R
L
= 10 kΩ,
-40 °C < T< 85 °C
R
L
= 10 kΩ, T = 25°C
V
OL
Low-level output voltage
R
L
= 10 kΩ,
-40 °C < T< 85 °C
Output sink current,
V
out
= V
CC
,
I
out
V
ΙD
= -200 mV
Output source current,
V
out
= 0 V,
V
ΙD
= 200 mV
I
CC
Supply current (per channel),
no load,
V
out
= V
CC
/2
T = 25 °C
-40 °C < T< 85 °C
T = 25 °C
-40 °C < T< 85 °C
T = 25 °C
-40 °C < T< 85 °C
AC performance
GBP
F
u
Φ
m
G
m
Gain bandwidth product
Unity gain frequency
Phase margin
Gain margin
R
L
= 1 MΩ, C
L
= 60 pF
10
8
60
10
kHz
degrees
dB
2.8
1.5
2
1.5
900
1200
1480
nA
4
mA
5
8
76
71
dB
95
90
10
25
40
25
40
mV
120
107
1
TBD
1
10
50
10
50
pA
150
235
1.4
µV
μV/°C
µV/√month
Min.
Typ.
Max.
Unit
I
ib
Input bias current
(2)
Common mode rejection
ratio,
CMR
20 log (ΔV
icm
/ΔV
io
),
V
icm
= 0 to 1.8 V
DS11846
-
Rev 4
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TSU111, TSU112
Electrical characteristics
Symbol
SR
e
n
ʃe
n
Parameter
Slew rate (10 % to 90 %)
Equivalent input noise voltage
Low-frequency, peak-to-peak
input noise
Conditions
R
L
= 1 MΩ, C
L
= 60 pF,
V
out
= 0.3 V to (V
CC+
) - 0.3 V
f = 100 Hz
Bandwidth: f = 0.1 to 10 Hz
100 mV from rail in
comparator, R
L
= 100 kΩ,
V
ΙD
= ±1 V, -40 °C < T< 85 °C
Min.
Typ.
2.5
220
3.8
Max.
Unit
V/ms
nV/√Hz
µV
pp
t
rec
Overload recovery time
325
µs
1. Typical value is based on the Vio drift observed after 1000h at 85 °C extrapolated to 25 °C using the
Arrhenius law and assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower
mode configuration
2. Guaranteed by design
Table 4.
Electrical characteristics at (V
CC +
) = 3.3 V with (V
CC -
) = 0 V, V
icm
= V
CC
/2, T
amb
= 25 °C, and R
L
= 1 MΩ
connected to V
CC
/2 (unless otherwise specified)
Symbol
Parameter
DC performance
V
io
ΔV
io
/ΔT
ΔV
io
I
io
Input offset voltage
Input offset voltage drift
Long-term input offset voltage drift
Input offset current
(2)
T = 25 °C
-40 °C < T< 85 °C
-40 °C < T< 85 °C
T = 25 °C
(1)
T = 25 °C
-40 °C < T< 85 °C
T = 25 °C
-40 °C < T< 85 °C
T = 25 °C
-40 °C < T< 85 °C
R
L
= 100 kΩ, T = 25 °C
R
L
= 100 kΩ, -40 °C < T< 85 °C
R
L
= 10 kΩ, T = 25 °C
R
L
= 10 kΩ, -40 °C < T< 85 °C
R
L
= 10 kΩ, T = 25°C
R
L
= 10 kΩ, -40 °C < T< 85 °C
T = 25 °C
-40 °C < T< 85 °C
T = 25 °C
-40 °C < T< 85 °C
T = 25 °C
-40 °C < T< 85 °C
AC performance
12
6
9
5
900
1200
1480
nA
18
22
mA
7
81
76
105
105
10
25
40
25
40
mV
130
dB
110
1
TBD
1
10
50
10
50
pA
150
235
1.4
µV
μV/°C
µV/√month
Conditions
Min. Typ. Max.
Unit
I
ib
Input bias current
(2)
Common mode rejection ratio,
20 log (ΔV
icm
/ΔV
io
), V
icm
= 0 to 3.3 V
Large signal voltage gain, V
out
= 0.2 V to
(V
CC+
) - 0.2 V
High-level output voltage, (drop from V
CC
+)
CMR
A
vd
V
OH
V
OL
Low-level output voltage
Output sink current, V
out
= V
CC
, V
ΙD
= -200 mV
I
out
Output source current, V
out
= 0 V, V
ΙD
= 200 mV
Supply current (per channel), no load,
V
out
= V
CC
/2
I
CC
DS11846
-
Rev 4
page 5/30
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