4
1N4001G-K - 1N4007G-K
Taiwan Semiconductor
1A, 50V - 1000V Glass Passivated Rectifier
FEATURES
●
●
●
●
●
●
Glass passivated chip junction
High current capability, Low VF
High reliability
High surge current capability
Low power loss, high efficiency
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
VALUE
1
50 - 1000
30
150
Single Die
UNIT
A
V
A
°C
DO-204AL (DO-41)
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
TV
Monitor
MECHANICAL DATA
● Case: DO-204AL (DO-41)
● Molding compound meets UL 94V-0 flammability rating
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Pure tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: As marked
● Weight: 0.33 g (approximately)
DO-204AL (DO-41)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse
voltage
Reverse voltage, total rms
value
Maximum DC blocking
voltage
Forward current
Surge peak forward
current, 8.3 ms single half
sine-wave superimposed
on rated load per diode
Junction temperature
Storage temperature
SYMBOL
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
G-K
50
35
50
G-K
100
70
100
G-K
200
140
200
G-K
400
280
400
1
30
- 55 to +150
- 55 to +150
G-K
600
420
600
G-K
800
560
800
G-K
1000
700
1000
1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
T
J
T
STG
V
V
V
A
A
°C
°C
UNIT
1
Version:A1612
4
1N4001G-K - 1N4007G-K
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
LIMIT
80
UNIT
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode
(1)
(2)
CONDITIONS
I
F
= 1A,T
J
= 25°C
T
J
= 25°C
T
J
= 125°C
1 MHz, V
R
=4.0V
SYMBOL
V
F
I
R
C
J
TYP
-
-
-
10
MAX
1
5
100
-
UNIT
V
µA
µA
pF
Reverse current @ rated V
R
per diode
Junction capacitance
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO.
PACKIN
G CODE
A0
1N400xG-K
(Note 1, 2)
R0
G
R1
B0
Notes:
1. "x" defines voltage from 50V (1N4001G-K) to 1000V (1N4007G-K)
2. Whole series with green compound (halogen-free)
DO-41
DO-41
PACKING CODE
SUFFIX
PACKAGE
DO-41
DO-41
PACKING
3,000 / Ammo box
(52mm taping)
5,000 / 13" Paper reel
5,000 / 13" Paper reel
(Reverse)
1,000 / Bulk packing
EXAMPLE P/N
EXAMPLE P/N
1N4001G-K A0G
PART NO.
1N4001G-K
PACKING
CODE
A0
PACKING CODE
SUFFIX
DESCRIPTION
Green compound
G
2
Version:A1612
4
1N4001G-K - 1N4007G-K
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
Fig2. Typical Junction Capacitance
AVERAGE FORWARD CURRENT (A)
1.5
100
1
CAPACITANCE (pF)
10
0.5
f=1.0MHz
Vsig=50mVp-p
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE(
o
C)
1
0.1
1
10
100
REVERSE VOLTAGE (V)
Fig3. Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
10
Fig4. Typical Forward Characteristics
100
T
J
=125°
10
10
1
UF1DLW
T
J
=125°C
T
J
=75°C
0.1
T
J
=25°C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.01
Pulse width
0.001
0.1
0.3
0.5 0.6
0.4
0.7
0.5
0.6
0.7
0.8
0.9
0.8 0.9
1
1.1 1.2 1.3
FORWARD VOLTAGE (V)
1
1.4
1.1
1.5
1.2
3
Version:A1612
(A)
1
1
0.1
T
J
=25°C
4
1N4001G-K - 1N4007G-K
Taiwan Semiconductor
Fig5. Maximum Non-repetitive Forward Surge Current
PEAK FORWARD SURGE CURRENT(A)
30
25
20
15
10
5
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
4
Version:A1612
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