M1MA151WAT1,
M1MA152WAT1
Preferred Device
Common Anode Silicon
Dual Switching Diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. These
devices are housed in the SC−59 package which is designed for low
power surface mount applications.
Features
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3 ANODE
•
Fast t
rr
, < 10 ns
•
Low C
D
, < 15 pF
•
Pb−Free Packages are Available
1 CATHODE 2
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Reverse Voltage
M1MA151WAT1
M1MA152WAT1
M1MA151WAT1
M1MA152WAT1
Single
Dual
Single
Dual
Single
Dual
Symbol
V
R
Value
40
80
40
80
100
150
225
340
500
750
Unit
Vdc
SC−59
CASE 318D
Peak Reverse Voltage
V
RM
Vdc
MARKING DIAGRAM
Forward Current
I
F
mAdc
Mx M
G
G
1
Mx = Device Code
x = N for 151
O for 152
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Peak Forward Current
I
FM
mAdc
Peak Forward Surge Current
I
FSM
(Note 1)
mAdc
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
P
D
T
J
T
stg
Max
200
150
−55
to + 150
Unit
mW
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 SEC
ORDERING INFORMATION
Device
M1MA151WAT1
M1MA151WAT1G
M1MA152WAT1
M1MA152WAT1G
Package
SC−59
SC−59
(Pb−Free)
SC−59
SC−59
(Pb−Free)
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2012
July, 2012
−
Rev. 10
1
Publication Order Number:
M1MA151WAT1/D
M1MA151WAT1, M1MA152WAT1
100
IF, FORWARD CURRENT (mA)
10
T
A
= 85°C
T
A
= 25°C
1.0
T
A
= - 40°C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
10
IR , REVERSE CURRENT (μA)
T
A
= 150°C
T
A
= 125°C
1.0
T
A
= 85°C
0.1
T
A
= 55°C
0.01
T
A
= 25°C
0.001
0
10
20
30
40
50
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
1.75
CD, DIODE CAPACITANCE (pF)
1.5
1.25
1.0
0.75
0
2
4
6
8
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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3
M1MA151WAT1, M1MA152WAT1
PACKAGE DIMENSIONS
SC*
59
04
CASE 318D*
ISSUE H
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
DIM
A
A1
b
c
D
E
e
L
H
E
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
MILLIMETERS
NOM
MAX
1.15
1.30
0.06
0.10
0.43
0.50
0.14
0.18
2.90
3.10
1.50
1.70
1.90
2.10
0.40
0.60
2.80
3.00
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
H
E
3
1
2
E
b
e
C
L
A
A1
STYLE 5:
PIN 1. CATHODE
2. CATHODE
3. ANODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
SCALE 10:1
mm
inches
*For additional information on our Pb
*
Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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M1MA151WAT1/D