Preliminary
Datasheet
RJK0851DPB
80V, 20A, 23m max.
Silicon N Channel Power MOS FET
Power Switching
Functions
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 18 m
typ. (at V
GS
= 10 V)
Pb-free
Halogen-free
R07DS0079EJ0200
Rev.2.00
Apr 09, 2013
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
3
12
4
1, 2, 3
4
5
Source
Gate
Drain
S S S
1 2 3
Application
Switching Mode Power Supply
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP
E
AS Note 2
Pch
Note3
ch-C
Tch
Tstg
Note 2
Ratings
80
20
20
80
20
10
13.3
45
2.78
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
This product is for the low voltage drive ( 10V).
If the driving voltage is over 10 V under normal conditions, please use the product for high gate to source cutoff voltage
(V
GS(off)
) which characteristics has been improved.
R07DS0079EJ0200 Rev.2.00
Apr 09, 2013
Page 1 of 6
RJK0851DPB
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
80
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
18
20
36
2050
214
82
0.7
14
7.1
3.6
8.8
4.1
42
5.7
0.83
34
Max
—
0.1
1
2.5
23
28
—
—
—
—
—
—
—
—
—
—
—
—
1.1
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0 V
V
GS
=
20
V, V
DS
= 0 V
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
I
D
= 10 A, V
GS
= 10 V
Note4
I
D
= 10 A, V
GS
= 4.5 V
Note4
I
D
= 10 A, V
DS
= 10 V
Note4
V
DS
= 10 V, V
GS
= 0 V,
f = 1 MHz
V
DD
= 25 V, V
GS
= 4.5 V,
I
D
= 20 A
V
GS
= 10 V, I
D
= 10 A,
V
DD
30 V, R
L
= 3
,
Rg = 4.7
I
F
= 20 A, V
GS
= 0 V
Note4
I
F
= 20 A, V
GS
= 0 V
di
F
/ dt = 100 A/
s
R07DS0079EJ0200 Rev.2.00
Apr 09, 2013
Page 2 of 6
RJK0851DPB
Preliminary
Main Characteristics
Power vs. Temperature Derating
80
1000
Maximum Safe Operation Area
Tc = 25°C
1 shot Pulse
Channel Dissipation Pch (W)
60
Drain Current I
D
(A)
100
10
μs
0
μ
10
10
1m
PW = 10 ms
s
s
40
1
DC Operation
Operation in
this area is
0.1 limited by R
DS(on)
0.01
0.1
20
0
50
100
150
200
1
10
100
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
3.2 V
3.0 V
4.5 V, 10 V
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
30
2.8 V
Drain Current I
D
(A)
40
40
30
20
20
25°C
Tc = 75°C
–25°C
0
1
2
3
4
5
10
V
GS
= 2.6 V
Pulse Test
10
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1000
800
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS (on)
(mΩ)
Drain to Source Saturation Voltage
V
DS (on)
(mV)
1000
Pulse Test
100
V
GS
= 4.5 V
10 V
10
600
400
I
D
= 20 A
10 A
5A
200
0
4
8
12
16
20
1
0.1
1
10
100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
R07DS0079EJ0200 Rev.2.00
Apr 09, 2013
Page 3 of 6
RJK0851DPB
Static Drain to Source on State Resistance
vs. Temperature
50
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
10000
Ciss
1000
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Pulse Test
I
D
= 10 A
30
V
GS
= 4.5 V
10 V
20
Capacitance C (pF)
40
Coss
100
Crss
V
GS
= 0 V
f = 1 MHz
10
10
0
–25
0
25
50
75
100 125 150
0
10
20
30
40
50
Case Temperature Tc (
°
C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
V
GS
V
DD
= 50 V
25 V
10 V
16
160
Reverse Drain Current I
DR
(A)
I
D
= 20 A
Gate to Source Voltage V
GS
(V)
200
20
50
Pulse Test
40
10 V
120
12
30
5V
80
V
DS
40
V
DD
= 50 V
25 V
10 V
0
10
20
30
40
8
20
V
GS
= 0 V
4
10
0
0
50
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
I
AP
= 10 A
V
DD
= 50 V
duty < 0.1 %
Rg
≥
50
Ω
Avalanche Energy E
AS
(mJ)
16
12
8
4
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0079EJ0200 Rev.2.00
Apr 09, 2013
Page 4 of 6
RJK0851DPB
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
θch
– c (t) =
γ
s (t) •
θch
– c
θch
– c = 2.78°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
0.05
0.03
2
0.0
lse
1
t pu
0.0
ho
1s
0.01
10
μ
100
μ
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AS
=
Rg
D. U. T
I
D
Vin
15 V
50
Ω
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 30 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0079EJ0200 Rev.2.00
Apr 09, 2013
Page 5 of 6
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
