BZX79C2V0 - BZX79C75
Taiwan Semiconductor
500mW, 5% Tolerance Zener Diodes
FEATURES
● Wide zener voltage range selection: 2.0V to 75V
● V
Z
tolerance selection of ± 5%
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
Z
Test current I
ZT
P
D
V
F
at I
F
=100mA
T
J
Max.
Package
Configuration
VALUE
2.0-75
5
500
1.5
175
DO-35
Single die
UNIT
V
mA
mW
V
°C
APPLICATIONS
●
●
●
●
Low voltage stabilizers or voltage references
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
●
●
●
●
Case: DO-35
Terminal: Matte tin plated leads, solderable per J-STD-002
Polarity: Indicated by cathode band
Weight: 109 ± 4 mg (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Power dissipation
Forward voltage
Junction temperature range
Storage temperature range
I
F
=100mA
SYMBOL
P
D
V
F
T
J
T
STG
VALUE
500
1.5
-65 to +175
-65 to +175
UNIT
mW
V
°C
°C
THERMAL PERFORMANCE
PARAMETER
Junction to ambient thermal resistance
SYMBOL
R
ӨJA
TYP
300
UNIT
°C/W
1
Version:F1804
BZX79C2V0 - BZX79C75
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
ZENER VOLTAGE
PART
NUMBER
MARKING
CODE
V
Min.
BZX79C2V0
BZX79C2V2
BZX79C2V4
BZX79C2V7
BZX79C3V0
BZX79C3V3
BZX79C3V6
BZX79C3V9
BZX79C4V3
BZX79C4V7
BZX79C5V1
BZX79C5V6
BZX79C6V2
BZX79C6V8
BZX79C7V5
BZX79C8V2
BZX79C9V1
BZX79C10
BZX79C11
BZX79C12
BZX79C13
BZX79C15
BZX79C16
BZX79C18
BZX79C20
BZX79C22
BZX79C24
BZX79C27
BZX79C30
BZX79C33
BZX79C36
BZX79C39
BZX79C43
BZX79C47
BZX79C51
BZX79C56
BZX79C62
BZX79C68
BZX79C75
BZX79C2V0
BZX79C2V2
BZX79C2V4
BZX79C2V7
BZX79C3V0
BZX79C3V3
BZX79C3V6
BZX79C3V9
BZX79C4V3
BZX79C4V7
BZX79C5V1
BZX79C5V6
BZX79C6V2
BZX79C6V8
BZX79C7V5
BZX79C8V2
BZX79C9V1
BZX79C10
BZX79C11
BZX79C12
BZX79C13
BZX79C15
BZX79C16
BZX79C18
BZX79C20
BZX79C22
BZX79C24
BZX79C27
BZX79C30
BZX79C33
BZX79C36
BZX79C39
BZX79C43
BZX79C47
BZX79C51
BZX79C56
BZX79C62
BZX79C68
BZX79C75
1.88
2.08
2.28
2.51
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
Nom.
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
Max.
2.12
2.33
2.56
2.89
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
80.0
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2.5
2.5
2.5
mA
V
Z
@ I
ZT
TEST
CURRENT
I
ZT
REGULAR
IMPEDANCE
Z
ZT
@ I
ZT
Ω
Max.
100
100
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
200
215
240
255
Z
ZK
@ I
ZK
Ω
Max.
600
600
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
400
425
1000
1000
1000
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
TEST
CURRENT
I
ZK
mA
LEAKAGE
CURRENT
I
R
@ V
R
µA
Max.
150
150
100
75
50
25
15
10
5
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
V
2
Version:F1804
BZX79C2V0 - BZX79C75
Taiwan Semiconductor
Notes:
1. The zener voltage (V
Z
) is tested under pulse condition of 30ms.
2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±5%.
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current
having an RMS value equal to 10% of the DC Zener current(I
ZT
or I
ZK
) is superimposed to I
ZT
or I
ZK.
ORDERING INFORMATION
PART NO.
(Note 1)
BZX79Cxxx R0
BZX79Cxxx R0G
BZX79Cxxx A0
BZX79Cxxx A0G
PACKAGE
DO-35
DO-35
DO-35
DO-35
PACKING
10K / 14" Reel
10K / 14" Reel
5K / Box (Ammo)
5K / Box (Ammo)
Note:
1. "xxx" defines part no. from BZX79C2V0 to BZX79C75
3
Version:F1804
BZX79C2V0 - BZX79C75
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Power Dissipation VS.
Ambient Temperature
600
500
Total Capacitance (pF)
400
300
200
100
0
0
40
80
120
o
Fig. 2 Total Capacitance
1000
f=1MHz
T
A
=25
o
C
V
R
=2V
V
R
=5V
P
D
-Power dissipation (mW)
V
R
=0V
100
10
V
R
=20V
1
160
200
0
Temperature ( C)
V
R
=30V
20
40
60
V
Z
- Reverse Voltage (V)
80
Fig. 3 Differential Impedance VS. Zener Voltage
1000
Differential Zener Impedance(Ohm)
I
Z
=1mA
Fig.4 Forward Current VS. Forward Voltage
1000
T
A
=25
o
C
Forward Current (mA)
100
I
Z
=2mA
I
Z
=5mA
100
10
I
Z
=10mA
10
1
1
0
1
10
V
Z
- Reverse Voltage (V)
100
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
F
- Forward Voltage (mV)
4
Version:F1804
BZX79C2V0 - BZX79C75
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSION
DO-35
DIM.
A
B
C
D
Unit (mm)
Min
0.34
2.90
25.40
1.30
Max
0.60
5.08
38.10
2.28
Unit (inch)
Min
0.013
0.114
1.000
0.051
Max
0.024
0.200
1.500
0.090
5
Version:F1804