Consult LTC Marketing for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container.
For more information on lead free part marking, go to:
http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to:
http://www.linear.com/tapeandreel/.
Some packages are available in 500 unit reels through
designated sales channels with #TRMPBF suffix.
NC
2
232516fa
For more information
www.linear.com/LTC2325-16
LTC2325-16
ELECTRICAL CHARACTERISTICS
SYMBOL
V
IN+
V
IN–
V
IN+
– V
IN–
V
CM
I
IN
C
IN
CMRR
V
IHCNV
V
ILCNV
I
INCNV
PARAMETER
Absolute Input Range (A
IN+
to A
IN–
)
Absolute Input Range (A
IN+
to A
IN–
)
Input Differential Voltage Range
Common Mode Input Range
Analog Input DC Leakage Current
Analog Input Capacitance
Input Common Mode Rejection Ratio
CNV
High Level Input Voltage
CNV
Low Level Input Voltage
CNV
Input Current
The
l
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C (Note 4).
CONDITIONS
(Note 5)
(Note 5)
V
IN
= V
IN+
– V
IN–
V
CM
= (V
IN+
– V
IN–
)/2
l
l
l
l
l
MIN
0
0
–REFOUT1,2,3,4
0
–1
TYP
MAX
V
DD
V
DD
REFOUT1,2,3,4
V
DD
1
UNITS
V
V
V
V
μA
pF
dB
V
V
μA
f
IN
= 2.2MHz
l
l
l
10
102
1.5
–10
0.5
10
The
l
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C (Note 4).
SYMBOL PARAMETER
Resolution
No Missing Codes
Transition Noise
Integral Linearity Error
Differential Linearity Error
Bipolar Zero-Scale Error
Bipolar Zero-Scale Error Drift
Bipolar Full-Scale Error
Bipolar Full-Scale Error Drift
CONDITIONS
l
l
CONVERTER CHARACTERISTICS
MIN
16
16
–9
–0.99
–12
–30
TYP
MAX
UNITS
Bits
Bits
INL
DNL
BZE
FSE
(Note 6)
(Note 7)
V
REFOUT1,2,3,4
= 4.096V (REFBUFEN Grounded) (Note 7)
V
REFOUT1,2,3,4
= 4.096V (REFBUFEN Grounded)
l
l
l
1.5
±2
±0.4
0
0.01
15
9
0.99
12
30
l
LSB
RMS
LSB
LSB
LSB
LSB/°C
LSB
ppm/°C
The
l
denotes the specifications which apply over the full operating temperature range,
otherwise specifications are at T
A
= 25°C and A
IN
= –1dBFS (Notes 4, 8).
SYMBOL PARAMETER
SINAD
SNR
THD
SFDR
CONDITIONS
l
DYNAMIC ACCURACY
MIN
76
77.5
TYP
81
81
82
82.5
–90
–91
93
93
95
500
500
1
3
MAX
UNITS
dB
dB
dB
dB
dB
dB
dB
dB
MHz
ps
ps
ps
RMS
ns
Signal-to-(Noise + Distortion) Ratio f
IN
= 2.2MHz, V
REFOUT1,2,3,4
= 4.096V, Internal Reference
f
IN
= 2.2MHz, V
REFOUT1,2,3,4
= 5V, External Reference
Signal-to-Noise Ratio
f
IN
= 2.2MHz, V
REFOUT1,2,3,4
= 4.096V, Internal Reference
f
IN
= 2.2MHz, V
REFOUT1,2,3,4
= 5V, External Reference
Total Harmonic Distortion
f
IN
= 2.2MHz, V
REFOUT1,2,3,4
= 4.096V, Internal Reference
f
IN
= 2.2MHz, V
REFOUT1,2,3,4
= 5V, External Reference
Spurious Free Dynamic Range
f
IN
= 2.2MHz, V
REFOUT1,2,3,4
= 4.096V, Internal Reference
f
IN
= 2.2MHz, V
REFOUT1,2,3,4
= 5V, External Reference
–3dB Input Bandwidth
Aperture Delay
Aperture Delay Matching
Aperture Jitter
Transient Response
Full-Scale Step
l
l
–80
l
78
232516fa
For more information
www.linear.com/LTC2325-16
3
LTC2325-16
INTERNAL REFERENCE CHARACTERISTICS
SYMBOL
V
REFOUT1,2,3,4
PARAMETER
Internal Reference Output Voltage
V
REF
Temperature Coefficient
REFOUT1,2,3,4 Output Impedance
V
REFOUT1,2,3,4
Line Regulation
I
REFOUT1,2,3,4
External Reference Current
4.75V < V
DD
< 5.25V
REFBUFEN = 0V
REFOUT1,2,3,4 = 4.096V
REFOUT1,2,3,4 = 2.048V
(Notes 9, 10)
CONDITIONS
4.75V < V
DD
< 5.25V
3.13V < V
DD
< 3.47V
(Note 14)
l
l
l
The
l
denotes the specifications which apply over the
full operating temperature range, otherwise specifications are at T
A
= 25°C (Note 4).
MIN
4.078
2.034
TYP
4.096
2.048
3
0.25
0.3
385
204
MAX
4.115
2.064
20
UNITS
V
V
ppm/°C
Ω
mV/V
μA
μA
The
l
denotes the specifications which apply over the
full operating temperature range, otherwise specifications are at T
A
= 25°C (Note 4).
SYMBOL PARAMETER
CMOS Digital Inputs and Outputs
V
IH
V
IL
I
IN
C
IN
V
OH
V
OL
I
OZ
I
SOURCE
I
SINK
V
ID
V
IS
V
OD
V
OS
V
OD_LP
V
OS_LP
High Level Input Voltage
Low Level Input Voltage
Digital Input Current
Digital Input Capacitance
High Level Output Voltage
Low Level Output Voltage
Hi-Z Output Leakage Current
Output Source Current
Output Sink Current
LVDS Differential Input Voltage
LVDS Common Mode Input Voltage
LVDS Differential Output Voltage
LVDS Common Mode Output Voltage
Low Power LVDS Differential Output
Voltage
Low Power LVDS Common Mode Output
Voltage
I
O
= –500μA
I
O
= 500μA
V
OUT
= 0V to OV
DD
V
OUT
= 0V
V
OUT
= OV
DD
CMOS/LVDS
= OV
DD
100Ω Differential Termination
OV
DD
= 2.5V
100Ω Differential Termination
OV
DD
= 2.5V
100Ω Differential Termination
OV
DD
= 2.5V
100Ω Differential Termination
OV
DD
= 2.5V
100Ω Differential Termination
OV
DD
= 2.5V
100Ω Differential Termination
OV
DD
= 2.5V
l
l
l
l
l
l
l
l
l
DIGITAL INPUTS AND DIGITAL OUTPUTS
CONDITIONS
CMOS/LVDS
= GND
MIN
l
l
TYP
MAX
UNITS
V
0.8 • OV
DD
0.2 • OV
DD
–10
5
OV
DD
– 0.2
0.2
–10
–10
10
240
1
220
0.85
100
0.85
350
1.2
200
1.2
600
1.45
600
1.4
350
1.4
10
10
V
μA
pF
V
V
μA
mA
mA
mV
V
mV
V
mV
V
V
IN
= 0V to OV
DD
l
LVDS Digital Inputs and Outputs
4
232516fa
For more information
www.linear.com/LTC2325-16
LTC2325-16
POWER REQUIREMENTS
SYMBOL
V
DD
IV
DD
CMOS I/O Mode
OV
DD
I
OVDD
I
NAP
I
SLEEP
P
D_3.3V
P
D_5V
PARAMETER
Supply Voltage
Supply Current
CMOS/LVDS
= GND
Supply Voltage
Supply Current
Nap Mode Current
Sleep Mode Current
Power Dissipation
5Msps Sample Rate (C
L
= 5pF)
Conversion Done (I
VDD
)
Sleep Mode (I
VDD
+ I
OVDD
)
V
DD
= 3.3V, 5Msps Sample Rate
Nap Mode
Sleep Mode
V
DD
= 5V, 5Msps Sample Rate
Nap Mode
Sleep Mode
l
l
l
l
l
l
l
l
l
l
The
l
denotes the specifications which apply over the full operating temperature
range, otherwise specifications are at T
A
= 25°C (Note 4).
CONDITIONS
5V Operation
3.3V Operation
5Msps Sample Rate (IN
+
= IN
–
= 0V)
l
l
l
MIN
4.75
3.13
TYP
MAX
5.25
3.47
UNITS
V
V
mA
V
mA
mA
µA
mW
mW
µW
mW
mW
µW
V
mA
mA
µA
mW
mW
µW
mW
mW
µW
31
1.71
4.4
5.3
20
102
18
20
162
27
90
2.37
26
5.3
20
151
52
80
214
91
90
44.5
2.63
15.5
6.4
90
181
21.1
28.8
261
32
424
2.63
31.5
6.4
90
218
58.6
288
301
69.2
424
Power Dissipation
LVDS I/O Mode
OV
DD
I
OVDD
I
NAP
I
SLEEP
P
D_3.3V
P
D_5V
CMOS/LVDS
= OV
DD
, OV
DD
= 2.5V
Supply Voltage
Supply Current
Nap Mode Current
Sleep Mode Current
Power Dissipation
5Msps Sample Rate (C
L
= 5pF, R
L
= 100Ω)
Conversion Done (I
VDD
)
Sleep Mode (I
VDD
+ I
OVDD
)
V
DD
= 3.3V, 5Msps Sample Rate
Nap Mode
Sleep Mode
V
DD
= 5V, 5Msps Sample Rate
Nap Mode
Sleep Mode
l
l
l
l
l
l
l
l
l
l
Power Dissipation
The
l
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
