Preliminary
GRF5115
33.0 dBm Power-LNA™
Tuning Range: 0.1
–
2.7 GHz
Product Description
GRF5115 is a high efficiency PA/Driver that delivers an
OP1dB of 33 dBm with greater than 55% drain efficien-
cy. It is tunable from 100 MHz up to 2.7 GHz with typi-
cal fractional bandwidths of 5 to 10%
Features
Reference: 5V/250mA/1.95GHz
•
•
•
•
•
•
•
Gain: 14.8 dB
OP1dB: 33.2 dBm
Drain Efficiency: 58%
OIP3: 43.0 dBm
Eval Board NF: 1.3 dB
Flexible Bias Voltage and Current
Process: GaAs pHEMT
The device can be biased with Vdd over a range from
2.7 to 5.0 volts and Iddq can be adjusted for optimal
linearity and efficiency.
Consult with the GRF applications engineering team for
custom tuning/evaluation board data and device s-
parameters.
Applications
•
•
High Efficiency Power Amplifier
Multi-stage LNA
3.0 x 3.0 mm QFN-16
Guerrilla RF Proprietary Information. Guerrilla RF
TM
and the composite logo of Guerrilla RF
TM
are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Revision Date: 08/14/18
Please contact Guerrilla RF at (+1) 336-510-7840 or
sales@guerrilla-rf.com
1
Preliminary
GRF5115
33.0 dBm Power-LNA™
Tuning Range: 0.1
–
2.7 GHz
Absolute Ratings:
Parameter
Drain Voltage
Transient Average RF Input Power: (Load VSWR < 2:1; Du-
ration: <1 hour)
Operating Temperature (Package Heat Sink)
Maximum Channel Temperature (MTTF > 10^6 Hours)
Maximum Dissipated Power
Electrostatic Discharge:
Charged Device Model: (TBD)
Human Body Model: (TBD)
Storage:
Storage Temperature
Moisture Sensitivity Level
T
STG
MSL
-65
150
1
°C
--
CDM
HBM
1500
250
V
V
Symbol
V
DD
P
IN MAX
T
AMB
T
MAX
P
DISS MAX
Min.
Max.
5.5
23.0
Unit
V
dBm
°C
°C
W
-40
105
170
1.6
Caution!
ESD Sensitive Device
Exceeding Absolute Maximum Rating conditions may cause permanent damage to the device.
Note: For package dimensions and manufacturing information, see the Guerrilla-RF.com website
for the following document located on the GRF5115 landing page: Manufacturing Note—MN-
001 Product Tape and Reel, Solderability and Package Outline Specification.
Link to manufacturing note
Guerrilla RF Proprietary Information. Guerrilla RF
TM
and the composite logo of Guerrilla RF
TM
are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Revision Date: 08/14/18
Please contact Guerrilla RF at (+1) 336-510-7840 or
sales@guerrilla-rf.com
2
Preliminary
GRF5115
33.0 dBm Power-LNA™
Tuning Range: 0.1
–
2.7 GHz
Pin Out (Top View)
Pin Assignments:
Pin
1
2
3
4
5
6
7
8
9
10
11
Name
Description
Enable Voltage Input
No Connect or Ground
RF Input
RF Input
No Connect or Ground
No Connect or Ground
No Connect or Ground
No Connect or Ground
PA Output/Bias
PA Output/Bias
No Connect or Ground
Bias Circuit Supply
No Connect or Ground
Bias Circuit Ground
No Connect or Ground
No Connect or Ground
Note
V
ENABLE
and series resistor set I
DDQ
. V
ENABLE
< =0.2 volts disables device.
On-die pull-down resistor will turn the part off if this node is allowed to
float.
No internal connection to die
Pins 3-4 tied together on system board
Pins 3-4 tied together on system board
No internal connection to die
No internal connection to die
No internal connection to die
No internal connection to die
Pins 9-10 tied together on system board. Supply Vdd here.
Pins 9-10 tied together on system board. Supply Vdd here.
No internal connection to die
Connect to V
DD
through external resistor
No internal connection to die
Consult application schematic
No internal connection to die
No internal connection to die
Provides DC and RF ground for LNA, as well as thermal heat sink. Rec-
ommend multiple 8 mil vias beneath the package for optimal RF and
thermal performance. Refer to evaluation board top layer graphic on
schematic page.
V
ENABLE
NC
RF_In
RF_In
NC
NC
NC
NC
RF_Out/V
DD
RF_Out/V
DD
NC
Bias2
NC
Bias1
NC
NC
12
13
14
15
16
PKG BASE
GND
Ground
Guerrilla RF Proprietary Information. Guerrilla RF
TM
and the composite logo of Guerrilla RF
TM
are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Revision Date: 08/14/18
Please contact Guerrilla RF at (+1) 336-510-7840 or
sales@guerrilla-rf.com
3
Preliminary
GRF5115
33.0 dBm Power-LNA™
Tuning Range: 0.1
–
2.7 GHz
Nominal Operating Parameters:
Parameter
Target Performance
(1.9 to 2.0 GHz Tune)
Test Frequency
Gain
Noise Figure (Evaluation Board)
Output 1dB Compression Point
Drain Efficiency @ OP1dB
Output Third Order Intercept Point
Switching Rise Time
Switching Fall Time
Quiescent Supply Current
Enable Current
Disabled Mode
Supply Current (Leakage)
Thermal Data
Thermal Resistance: (IR Scan Method)
Channel Temperature @ +85C Refer-
ence (package heat sink)
I
DD
2.0
34
128
uA
ᵒC/W
ᵒC
V
DD:
5.0 volts; I
DDQ
: 250 mA
P
DISS
:
1.25 W; No RF
F
TEST
S(2,1)
NF
OP1dB
1.95
14.8
1.3
33.2
58.0
43.0
100
850
250
0.5
GHz
dB
dB
dBm
%
dBm
ns
ns
mA
mA
12.0 dBm P
OUT
per tone
(1949 and 1951 MHz)
Symbol
Specification
Min.
Typ.
Max.
Unit
Condition
Bias: 5.0 V and 250 mA un-
less otherwise noted. (+25C)
OIP3
T
RISE
T
FALL
I
DDQ
I
ENABLE
jc
T
CHANNEL
Guerrilla RF Proprietary Information. Guerrilla RF
TM
and the composite logo of Guerrilla RF
TM
are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Revision Date: 08/14/18
Please contact Guerrilla RF at (+1) 336-510-7840 or
sales@guerrilla-rf.com
4
Preliminary
GRF5115
33.0 dBm Power-LNA™
Tuning Range: 0.1
–
2.7 GHz
GRF5115 Evaluation Board Data: (1.9 to 2.0 GHz Tune)
Guerrilla RF Proprietary Information. Guerrilla RF
TM
and the composite logo of Guerrilla RF
TM
are trademarks of Guerrilla RF, Inc. ©2014 Guerrilla RF, Inc. All rights reserved.
Revision Date: 08/14/18
Please contact Guerrilla RF at (+1) 336-510-7840 or
sales@guerrilla-rf.com
5
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