MCP6061/2/4
60 µA, High Precision Op Amps
Features
•
•
•
•
•
•
•
•
Low Offset Voltage:
±
150 µV (maximum)
Low Quiescent Current: 60 µA (typical)
Rail-to-Rail Input and Output
Wide Supply Voltage Range: 1.8V to 6.0V
Gain Bandwidth Product: 730 kHz (typical)
Unity Gain Stable
Extended Temperature Range: -40°C to +125°C
No Phase Reversal
Description
The Microchip Technology Inc. MCP6061/2/4 family of
operational amplifiers (op amps) has low input offset
voltage (
±
150 µV, maximum) and rail-to-rail input and
output operation. This family is unity gain stable and
has a gain bandwidth product of 730 kHz (typical).
These devices operate with a single supply voltage as
low as 1.8V, while drawing low quiescent current per
amplifier (60 µA, typical). These features make the
family of op amps well suited for single-supply, high
precision, battery-powered applications.
The MCP6061/2/4 family is offered in single
(MCP6061), dual (MCP6062), and quad (MCP6064)
configurations.
The MCP6061/2/4 is designed with Microchip’s
advanced CMOS process. All devices are available in
the extended temperature range, with a power supply
range of 1.8V to 6.0V.
Applications
•
•
•
•
•
•
•
Automotive
Portable Instrumentation
Sensor Conditioning
Battery Powered Systems
Medical Instrumentation
Test Equipment
Analog Filters
Package Types
MCP6061
SOIC
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
8 NC
7 V
DD
6 V
OUT
5 NC
Design Aids
•
•
•
•
•
SPICE Macro Models
FilterLab
®
Software
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
MCP6062
SOIC
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
8 V
DD
7 V
OUTB
6 V
INB
–
5 V
INB
+
Typical Application
R
L
Z
IN
MCP6061
C
Z
IN
= R
L
+ j
ω
L
L = R
L
RC
R
Gyrator
V
OUT
MCP6061
2x3 TDFN *
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
EP
9
8 NC
7 V
DD
5 NC
MCP6062
2x3 TDFN *
V
OUTA
1
V
INA
– 2
V
SS
4
EP
9
8 V
DD
7 V
OUTB
6 V
INB
–
5 V
INB
+
6 V
OUT
V
INA
+ 3
MCP6061
SOT-23-5
V
OUT
1
V
SS
2
V
IN
+ 3
5 V
DD
4 V
IN
–
MCP6064
SOIC, TSSOP
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
DD
4
V
INB
+ 5
V
INB
– 6
V
OUTB
7
14 V
OUTD
13 V
IND
–
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
–
8 V
OUTC
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
©
2010 Microchip Technology Inc.
DS22189B-page 1
MCP6061/2/4
NOTES:
DS22189B-page 2
©
2010 Microchip Technology Inc.
MCP6061/2/4
1.0
1.1
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
– V
SS
........................................................................7.0V
Current at Input Pins .....................................................±2 mA
Analog Inputs (V
IN
+
, V
IN
-
)†† .......... V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs ......... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short-Circuit Current .................................continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ....................................-65°C to +150°C
Maximum Junction Temperature (T
J
) .......................... +150°C
ESD protection on all pins (HBM; MM)
................ ≥
4 kV; 400V
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational listings of this
specification is not implied. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
††
See
4.1.2 “Input Voltage Limits”
1.2
Specifications
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.8V to +6.0V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2 and R
L
= 10 kΩ to V
L
. (Refer to
Figure 1-1).
Parameters
Input Offset
Input Offset Voltage
Input Offset Drift with Temperature
V
OS
ΔV
OS
/ΔT
A
ΔV
OS
/ΔT
A
Power Supply Rejection Ratio
Input Bias Current and Impedance
Input Bias Current
I
B
I
B
I
B
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common Mode Input Voltage Range
Common Mode Rejection Ratio
V
CMR
V
CMR
CMRR
V
SS
−0.15
V
SS
−0.3
72
74
72
74
Note 1:
—
—
89
91
87
89
V
DD
+0.15
V
DD
+0.3
—
—
—
—
V
V
dB
dB
dB
dB
V
DD
= 1.8V
(Note
1)
V
DD
= 6.0V
(Note
1)
V
CM
= -0.15V to 1.95V,
V
DD
= 1.8V
V
CM
= -0.3V to 6.3V,
V
DD
= 6.0V
V
CM
= 3.0V to 6.3V,
V
DD
= 6.0V
V
CM
= -0.3V to 3.0V,
V
DD
= 6.0V
I
OS
Z
CM
Z
DIFF
—
—
—
—
—
—
±1.0
60
1100
±1.0
10
13
||6
10
13
||6
100
—
5000
—
—
—
pA
pA
pA
pA
Ω||pF
Ω||pF
T
A
= +85°C
T
A
= +125°C
PSRR
-150
—
—
70
—
±1.5
±4.0
87
+150
—
—
—
µV
V
DD
= 3.0V,
V
CM
= V
DD
/3
Sym
Min
Typ
Max
Units
Conditions
µV/°C T
A
= -40°C to +85°C,
V
DD
= 3.0V, V
CM
= V
DD
/3
µV/°C T
A
= +85°C to +125°C,
V
DD
= 3.0V, V
CM
= V
DD
/3
dB
V
CM
= V
SS
Figure 2-13
shows how V
CMR
changed across temperature.
©
2010 Microchip Technology Inc.
DS22189B-page 3
MCP6061/2/4
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.8V to +6.0V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2 and R
L
= 10 kΩ to V
L
. (Refer to
Figure 1-1).
Parameters
Open-Loop Gain
DC Open-Loop Gain
(Large Signal)
Output
Maximum Output Voltage Swing
Output Short-Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Note 1:
V
DD
I
Q
1.8
30
—
60
6.0
90
V
µA
I
O
= 0, V
DD
= 6.0V
V
CM
= 0.9V
DD
V
OL,
V
OH
I
SC
V
SS
+15
—
—
—
±6
±27
V
DD
–15
—
—
mV
mA
mA
0.5V input overdrive
V
DD
= 1.8V
V
DD
= 6.0V
A
OL
95
115
—
dB
0.2V < V
OUT
<(V
DD
-0.2V)
V
CM
= V
SS
Sym
Min
Typ
Max
Units
Conditions
Figure 2-13
shows how V
CMR
changed across temperature.
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8 to +6.0V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2, R
L
= 10 kΩ to V
L
and C
L
= 60 pF. (Refer to
Figure 1-1).
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
E
ni
e
ni
i
ni
—
—
—
4.5
25
0.6
—
—
—
µVp-p
nV/√Hz
fA/√Hz
f = 0.1 Hz to 10 Hz
f = 10 kHz
f = 1 kHz
GBWP
PM
SR
—
—
—
730
61
0.25
—
—
—
kHz
°
V/µs
G = +1 V/V
Sym
Min
Typ
Max
Units
Conditions
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.8V to +6.0V and V
SS
= GND.
Parameters
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-2x3 TDFN
Thermal Resistance, 8L-SOIC
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Note 1:
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
—
220.7
52.5
149.5
95.3
100
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
-40
-65
—
—
+125
+150
°C
°C
Note 1
Sym
Min
Typ
Max
Units
Conditions
The internal junction temperature (T
J
) must not exceed the absolute maximum specification of +150°C.
DS22189B-page 4
©
2010 Microchip Technology Inc.
MCP6061/2/4
1.3
Test Circuits
C
F
6.8 pF
R
G
100 kΩ
V
P
V
IN+
MCP606X
V
IN–
V
M
R
G
100 kΩ
(V/V)
(V)
(mV)
C
F
6.8 pF
V
L
R
F
100 kΩ
R
L
10 kΩ
V
OUT
C
L
60 pF
C
B1
100 nF
R
F
100 kΩ
V
DD
V
DD
/2
The circuit used for most DC and AC tests is shown in
Figure 1-1.
This circuit can independently set V
CM
and
V
OUT
; see
Equation 1-1.
Note that V
CM
is not the
circuit’s common mode voltage ((V
P
+ V
M
)/2), and that
V
OST
includes V
OS
plus the effects (on the input offset
error, V
OST
) of temperature, CMRR, PSRR and A
OL
.
EQUATION 1-1:
G
DM
= R
F
⁄
R
G
V
CM
=
(
V
P
+ V
DD
⁄
2
)
⁄
2
C
B2
1 µF
V
OUT
=
(
V
DD
⁄
2
)
+
(
V
P
–
V
M
)
+ V
OST
(
1 + G
DM
)
Where:
G
DM
= Differential Mode Gain
V
CM
= Op Amp’s Common Mode
Input Voltage
V
OST
= Op Amp’s Total Input Offset
Voltage
V
OST
= V
IN–
–
V
IN+
FIGURE 1-1:
AC and DC Test Circuit for
Most Specifications.
©
2010 Microchip Technology Inc.
DS22189B-page 5
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