BZT55C2V4 - BZT55C75
Taiwan Semiconductor
500mW, 5% Tolerance Zener Diodes
FEATURES
● Wide zener voltage range selection: 2.4V to 75V
● V
Z
tolerance selection of ± 5%
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
Z
P
D
V
F
at I
F
=10mA
T
J
Max.
VALUE
2.4-75
500
1
UNIT
V
mW
V
APPLICATIONS
●
●
●
●
Low voltage stabilizers or voltage references
Adapters
Lighting application
On-board DC/DC converter
Package
Configuration
175
°C
Quadro Mini-
MELF (LS34)
Single die
MECHANICAL DATA
●
●
●
●
Case: Quadro Mini-MELF (LS34)
Terminal: Matte tin plated leads, solderable per J-STD-002
Polarity: Indicated by cathode band
Weight: 29 ± 2.5mg
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage @ I
F
=10mA
Power dissipation
Junction temperature range
Storage temperature range
SYMBOL
V
F
P
D
T
J
T
STG
VALUE
1
500
-65 to +175
-65 to +175
UNIT
V
mW
°C
°C
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
TYP
500
UNIT
°C/W
1
Version: G1804
BZT55C2V4 - BZT55C75
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
ZENER VOLTAGE
PART NUMBER
V
Z
@ I
ZT
V
Min.
BZT55C2V4
BZT55C2V7
BZT55C3V0
BZT55C3V3
BZT55C3V6
BZT55C3V9
BZT55C4V3
BZT55C4V7
BZT55C5V1
BZT55C5V6
BZT55C6V2
BZT55C6V8
BZT55C7V5
BZT55C8V2
BZT55C9V1
BZT55C10
BZT55C11
BZT55C12
BZT55C13
BZT55C15
BZT55C16
BZT55C18
BZT55C20
BZT55C22
BZT55C24
BZT55C27
BZT55C30
BZT55C33
BZT55C36
BZT55C39
BZT55C43
BZT55C47
BZT55C51
BZT55C56
BZT55C62
BZT55C68
BZT55C75
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
Nom.
2.28
2.51
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
Max.
2.56
2.89
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.1
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
TEST
CURRENT
I
ZT
mA
REGULAR
IMPEDANCE
Z
ZT
@ I
ZT
Ω
Max.
85
85
85
85
85
85
75
60
35
25
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
125
135
150
160
170
Z
ZK
@ I
ZK
Ω
Max.
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
500
600
700
700
1,000
1,000
1,000
1,000
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
TEST
CURRENT
I
ZK
mA
µA
Max.
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
28
32
35
38
42
47
51
56
I
R
@ V
R
V
LEAKAGE CURRENT
2
Version: G1804
BZT55C2V4 - BZT55C75
Taiwan Semiconductor
Notes:
1. The zener voltage (V
Z
) is tested under pulse condition of 30ms
2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±5%
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current
having an rms value equal to 10% of the DC zener current(I
ZT
or I
ZK
) is superimposed to I
ZT
or I
ZK
ORDERING INFORMATION
PART NO.
(Note)
BZT55Cxxx L0
BZT55Cxxx L0G
BZT55Cxxx L1
BZT55Cxxx L1G
PACKAGE
Quadro Mini-MELF
Quadro Mini-MELF
Quadro Mini-MELF
Quadro Mini-MELF
PACKING
10K / 13" Reel
10K / 13" Reel
2.5K / 7" Reel
2.5K / 7" Reel
Note:
"xxx" defines voltage from 2.4V (BZT55C2V4) to 75V (BZT55C75)
3
Version: G1804
BZT55C2V4 - BZT55C75
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig. 1 Typical Forward Characteristics
1000
Fig. 2 Admissible Power Dissipation Curve
600
Forward Current (mA)
100
Power Dissipation (mW)
T
A
=25
o
C
500
400
300
10
200
100
1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
0
50
100
150
200
Forward Voltage (V)
Ambient Temperature (
o
C)
Fig. 3 Typical Capacitance
1000
100
Capacitance (pF)
1V Bias
10
Bias at 50% of V
Z
(Nom)
1
1
10
Zener Voltage (V)
100
4
Version: G1804
BZT55C2V4 - BZT55C75
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSION
Quadro Mini-MELF
DIM.
A
B
C
D
Unit (mm)
Min
3.30
1.40
0.20
1.8 TYP.
Max
3.70
1.60
0.45
Unit (inch)
Min
0.130
0.055
0.008
Max
0.146
0.063
0.018
0.071 TYP.
SUGGEST PAD LAYOUT
DIM.
A
B
C
D
Unit (mm)
Typ.
1.25
2.00
2.50
5.00
Unit (inch)
Typ.
0.049
0.079
0.098
0.197
5
Version: G1804
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