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SMP5912

产品描述JFET Dual JFET N-Ch -25V 50mA 500mW 4mW
产品类别分立半导体    晶体管   
文件大小65KB,共2页
制造商InterFET
官网地址http://www.interfet.com/
下载文档 详细参数 全文预览

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SMP5912概述

JFET Dual JFET N-Ch -25V 50mA 500mW 4mW

SMP5912规格参数

参数名称属性值
厂商名称InterFET
零件包装代码SOT
包装说明SMALL OUTLINE, R-PDSO-G8
针数8
Reach Compliance Codeunknown
配置SEPARATE, 2 ELEMENTS
FET 技术JUNCTION
最大反馈电容 (Crss)1.2 pF
JESD-30 代码R-PDSO-G8
元件数量2
端子数量8
工作模式DEPLETION MODE
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)0.5 W
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON

文档预览

下载PDF文档
B-64
01/99
SMP5911, SMP5912
Dual N-Channel Silicon Junction Field-Effect Transistor
¥ Wideband Differential
Amplifiers
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Cutoff Voltage
Gate Source Voltage
Drain Saturation Current (Pulsed)
V
(BR)GSS
I
GSS
I
G
V
GS(OFF)
V
GS
I
DSS
SMP5911
Min
– 25
– 100
– 250
– 100
– 100
– 1.0
– 0.3
7
–5
–4
40
SMP5912
Min
– 25
– 100
– 250
– 100
– 100
– 1.0
– 0.3
7
–5
–4
40
Process NJ30L
Unit
V
pA
nA
pA
nA
V
V
mA
Max
Max
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DS
= 15V, I
D
= 5 nA
V
DS
= 15V, I
D
= 5 mA
V
DS
= 10V, V
GS
= ØV
T
A
= 125°C
T
A
= 150°C
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source
Output Conductance
Common Source Input Capacitance
Common Source Reverse Transfer Capacitance
Equivalent Short Circuit Input Noise Voltage
g
fs
g
os
C
iss
C
rss
e
N
¯
NF
V
GS1
– V
GS2
I
G1
– I
G2
3000 10000 3000 10000
3000 10000 3000 10000
100
150
5
1.2
20
1
10
20
1
1
20
20
20
20
0.95
0.95
0.95
100
150
5
1.2
20
1
15
20
1
1
40
40
40
40
µS
µS
µS
µS
pF
pF
nV/√Hz
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
R
G
= 100 KΩ
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, V
GS
= ØV
V
DG
= 10V, I
D
= 5 mA
f = 1 kHz
f = 100 MHz
f = 1 kHz
f = 100 MHz
f = 1 MHz
f = 1 MHz
f = 10 kHz
f = 10 kHz
Noise Figure
Gate Source Differential Voltage
Gate Differential Current
Drain Saturation Current Ratio
Transconductance Ratio
Gate Source Differential Voltage
With Temperature
dB
mV
nA
T
A
= 125°C
f = 1 kHz
T
A
= 25°C
T
B
= 125°C
T
A
= 35°C
T
B
= 25°C
I
DSS1
/ I
DSS2
0.95
g
fs1
/ g
fs2
∆V
GS1
– V
GS2
∆T
µV/°C
µV/°C
µV/°C
µV/°C
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
V
DG
= 10V, I
D
= 5 mA
SOIC-8 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source 1, 2 Drain 1, 3 Gate 1, 4 N/C,
5 Source 2, 6 Drain 2, 7 Gate 2,
8 Omitted
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com

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