Preliminary
Datasheet
RJK0332DPB-01
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 3.6 m
typ. (at V
GS
= 10 V)
Pb-free
Halogen-free
R07DS0268EJ0500
(Previous: REJ03G1641-0400)
Rev.5.00
Mar 01, 2011
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
3
12
4
1, 2, 3
4
5
Source
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-c
Note3
Tch
Tstg
Note1
Ratings
30
20
35
140
35
15
22.5
45
2.78
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0268EJ0500 Rev.5.00
Mar 01, 2011
Page 1 of 6
RJK0332DPB-01
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Body–drain diode reverse recovery
charge
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Qrr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
3.6
5.0
70
2180
420
140
0.7
14
5.1
3.0
5.8
3.8
40
4.4
0.83
25
19
Max
—
0.1
1
2.5
4.7
7.0
—
—
—
—
—
—
—
—
—
—
—
—
1.08
—
—
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
nC
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
=
20
V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 17.5 A, V
GS
= 10 V
Note4
I
D
= 17.5 A, V
GS
= 4.5 V
Note4
I
D
= 17.5 A, V
DS
= 10 V
Note4
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
DD
= 10 V, V
GS
= 4.5 V,
I
D
= 35 A
V
GS
= 10 V, I
D
= 17.5 A,
V
DD
10 V, R
L
= 0.57
,
Rg = 4.7
I
F
= 35 A, V
GS
= 0
Note4
I
F
= 35 A, V
GS
= 0
di
F
/ dt = 100 A/
s
R07DS0268EJ0500 Rev.5.00
Mar 01, 2011
Page 2 of 6
RJK0332DPB-01
Preliminary
Main Characteristics
Power vs. Temperature Derating
80
1000
Maximum Safe Operation Area
Pch (W)
I
D
(A)
10
μs
100
10
0
μ
s
60
Channel Dissipation
Drain Current
40
10
1 ms
PW = 10 ms
DC
Op
on
ati
er
20
1
Operation in
this area is
limited by R
DS(on)
0
50
100
150
200
Tc = 25°C
0.1 1 shot Pulse
0.1
1
10
100
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
50
4.5 V
10 V
Pulse Test
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
30
I
D
(A)
Drain Current
40
3.2 V
40
Drain Current
3.0 V
30
20
2.8 V
20
25°C
Tc = 75°C
–25°C
10
10
V
GS
= 2.6 V
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS (on)
(mΩ)
Drain to Source Saturation Voltage
V
DS (on)
(mV)
100
Pulse Test
Pulse Test
150
30
100
10
V
GS
= 4.5 V
3
I
D
= 20 A
50
10 A
5A
10 V
0
4
8
12
16
20
1
1
3
10
30
100
300 1000
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
R07DS0268EJ0500 Rev.5.00
Mar 01, 2011
Page 3 of 6
RJK0332DPB-01
Static Drain to Source on State Resistance
vs. Temperature
10
Pulse Test
10000
3000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Capacitance C (pF)
8
I
D
= 5 A, 10 A, 20 A
Ciss
1000
300
100
30
10
0
V
GS
= 0
f = 1 MHz
10
20
30
6
V
GS
= 4.5 V
Coss
Crss
4
10 V
2
0
–25
5 A, 10 A, 20 A
0
25
50
75
100 125 150
Case Temperature
Tc
(
°
C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
V
GS
(V)
20
50
Dynamic Input Characteristics
V
DS
(V)
50
Reverse Drain Current I
DR
(A)
I
D
= 35 A
V
GS
V
DD
= 25 V
10 V
16
Pulse Test
10 V
40
5V
40
Drain to Source Voltage
30
V
DS
20
12
Gate to Source Voltage
30
8
20
V
GS
= 0, –5 V
10
V
DD
= 25 V
10 V
0
20
40
60
80
4
10
0
0
100
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
50
I
AP
= 15 A
V
DD
= 15 V
duty < 0.1 %
Rg
≥
50
Ω
40
30
20
10
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0268EJ0500 Rev.5.00
Mar 01, 2011
Page 4 of 6
RJK0332DPB-01
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
Preliminary
D=1
0.5
0.3
0.2
0.1
0.1
θch
– c (t) =
γ
s (t) •
θch
– c
θch
– c = 2.78°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
0.05
0.03
2
0.0
lse
1
t pu
0.0
ho
1s
0.01
10
μ
100
μ
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
D. U. T
I
D
Vin
15 V
50
Ω
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 10 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0268EJ0500 Rev.5.00
Mar 01, 2011
Page 5 of 6
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