SA SERIES
Taiwan Semiconductor
CREAT BY ART
500W, 5V - 170V Transient Voltage Suppressor
FEATURES
- Excellent clamping capability
- Low dynamic impedance
- 500W surge capability at 10 / 1000
μs
waveform
- Fast response time: Typically less than
1.0ps from 0 volt to V
BR
for unidirectional
and 5.0ns for bidirectional
- Typical I
R
less than 1μA above 10V
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DO-204AC (DO-15)
MECHANICAL DATA
Case:
DO-204AC (DO-15)
Molding compound: UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Weight:
0.4g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25°C, Tp=1ms (Note 1)
Steady state power dissipation at T
L
=75°C
lead lengths .375", 9.5mm (Note 2)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load (Note 3)
Maximum instantaneous forward voltage at 35 A for
Unidirectional only
Operating junction temperature range
Storage temperature range
Note 2: Mounted on 10 x 10 mm copper pads to each terminal
Note 3: 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
SYMBOL
P
PK
P
D
I
FSM
V
F
T
J
T
STG
VALUE
500
3
70
3.5
- 55 to +175
- 55 to +175
UNIT
W
W
A
V
°C
°C
Note 1: Non-repetitive current pulse per fig. 3 and derated above T
A
=25°C per fig. 2
Devices for Bipolar Applications
1. For bidirectional use C or CA suffix for types SA5.0 - types SA170.
2. Electrical characteristics apply in both directions
Version: K1602
SA SERIES
Taiwan Semiconductor
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
Non-repetitive
pulse waveform
shown in fig.3
10
125
PEAK POWER (P
PP
) DERATING IN
PERCENTAGE, %
100
75
50
25
0
0
25
50
75
100
125
150
175
200
T
L
FIG.2 POWER DERATING CURVE
P
PPM
, PEAK PULSE POWER, KW
1
PPK".5"
IMPULSE
EXPONENTIAL
DECAY
HALF SINE
T
A
PPK
0.1
PPK
SQUARE
0.01
0
1
10
100
1,000
10,000
tp, PULSE WIDTH, sec
TEMPERATURE, (
°
C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
150
tr=10μs
PEAK PULSE CURRENT- %
Peak value
I
PPM
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT UNIDIRECTIONAL ONLY
IFSM, PEAK FORWARD SURGE CURRENT,
AMPERES
100
8.3ms single half sine wave
100
Half value-I
PPM
/2
10/1000μs, waveform
as defined by R.E.A.
50
0
0.0
td
1.0
2.0
t, TIME(ms)
3.0
4.0
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 5 TYPICAL JUNCTION CAPACITANCE
(UNIDIRECTIONAL)
10000
C
J
, JUNCTION CAPACITANCE. (pF)
A
1000
f=1.0MHz
Vsig=50mVp-p
100
Measured at
stand-off
voltage,V
WM
10
1
10
VR=0
100
1000
V(
BR
), BREAKDOWN VOLTAGE. VOLTS
Version: K1602
SA SERIES
Taiwan Semiconductor
Breakdown
Voltage
(Note 1)
V
BR
V
Min.
SA36
SA36A
SA40
SA40A
SA43
SA43A
SA45
SA45A
SA48
SA48A
SA51
SA51A
SA54
SA54A
SA58
SA58A
SA60
SA60A
SA64
SA64A
SA70
SA70A
SA75
SA75A
SA78
SA78A
SA85
SA85A
SA90
SA90A
SA100
SA100A
SA110
SA110A
SA120
SA120A
SA130
SA130A
SA150
SA150A
SA160
SA160A
SA170
SA170A
Notes:
1. V
BR
measure after I
T
applied for 300us, I
T
=square wave pulse or equivalent.
2. Surge current waveform per figure. 3 and derate per figure. 2.
3. For bipolar types having V
WM
of 10 volts and under, the I
R
limit is doubled.
4. All terms and symbols are consistent with ANSI/IEEE C62.35.
Version: K1602
40.0
40.0
44.4
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
Max.
48.9
44.2
54.3
49.1
58.4
52.8
61.1
55.3
65.2
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
103
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Test
Current
I
T
mA
Stand-Off
Voltage
V
WM
V
Maximum
Reverse
Leakage
@ V
WM
I
R
μA
Maximum
Peak
Surge
Current
I
PPM
A
(Note 2)
8.1
9.0
7.3
8.1
6.8
7.5
6.5
7.2
6.1
6.7
5.7
6.3
5.4
6.0
5.0
5.6
4.9
5.4
4.6
5.0
4.2
4.6
3.9
4.3
3.7
4.1
3.4
3.8
3.2
3.5
2.9
3.2
2.6
2.9
2.4
2.7
2.2
2.5
1.9
2.1
2.0
2.0
1.7
0.1
64.5
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
86.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
230
209
268
243
257
259
304
275
46
41
51
46
55
50
58
52
63
56
66
61
71
65
78
70
80
71
86
76
94
85
101
91
105
95
114
103
121
110
135
123
148
133
162
146
175
158
203
184
217
196
230
208
Maximum
Clamping
Voltage
@ I
PPM
Vc
V
Maximum
Temperature
Coefficient
V
BR
mV / °C
General
Part
Number
Microchip MCU
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