SM8S10AT thru SM8S43AT
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• T
J
= 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
- Automotive ordering code: base P/NHE3
DO-218 Compatible
PRIMARY CHARACTERISTICS
V
BR
P
PPM
(10 x 1000 μs)
P
PPM
(10 x 10 000 μs)
P
D
V
WM
I
FSM
T
J
max.
Polarity
Package
11.1 V to 52.8 V
6600 W
5200 W
8W
10 V to 43 V
700 A
175 °C
Uni-directional
DO-218AC
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case:
DO-218AC
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
Heatsink is anode
per
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
with 10/1000 μs waveform
Peak pulse power dissipation
with 10/10 000 μs waveform
Power dissipation on infinite heatsink at T
C
= 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
Note
(1)
Non-repetitive current pulse derated above T = 25 °C
A
P
PPM
P
D
I
PPM (1)
I
FSM
T
J
, T
STG
SYMBOL
VALUE
6600
W
5200
8.0
See next table
700
-55 to +175
W
A
A
°C
UNIT
Revision: 20-Mar-15
Document Number: 87734
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM8S10AT thru SM8S43AT
www.vishay.com
Vishay General Semiconductor
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
MAXIMUM REVERSE
LEAKAGE
AT V
WM
T
J
= 175 °C
I
D
(μA)
250
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
MAX. PEAK
MAXIMUM
PULSE CURRENT CLAMPING
AT 10/1000 μs
VOLTAGE
WAVEFORM
AT I
PPM
(A)
V
C
(V)
388
363
332
307
284
270
254
239
226
204
186
170
157
145
136
124
114
102
95.1
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
DEVICE
TYPE
SM8S10AT
SM8S11AT
SM8S12AT
SM8S13AT
SM8S14AT
SM8S15AT
SM8S16AT
SM8S17AT
SM8S18AT
SM8S20AT
SM8S22AT
SM8S24AT
SM8S26AT
SM8S28AT
SM8S30AT
SM8S33AT
SM8S36AT
SM8S40AT
SM8S43AT
BREAKDOWN
VOLTAGE
V
BR
(V)
MIN.
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
MAX.
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
TEST
CURRENT
I
T
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
STAND-OFF
VOLTAGE
V
WM
(V)
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
33.0
36.0
40
43
Note
• For all types maximum V
F
= 1.8 V at I
F
= 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to case
SYMBOL
R
JC
VALUE
0.90
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SM8S10ATHE3/I
(1)
Note
(1)
AEC-Q101 qualified
UNIT WEIGHT (g)
2.605
PREFERRED PACKAGE CODE
I
BASE QUANTITY
750
DELIVERY MODE
13" diameter plastic tape and reel,
anode towards the sprocket hole
Revision: 20-Mar-15
Document Number: 87734
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM8S10AT thru SM8S43AT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
8.0
10 000
6.0
4.0
2.0
Reverse
Surge
Power (W)
1000
0
50
100
150
200
10
100
Power Dissipation (W)
0
Case Temperature (°C)
Pulse Width (ms) - ½ I
PP
Exponential Waveform
Fig. 1 -
Power Derating Curve
Fig. 4 -
Reverse Power Capability
6000
100
5000
Transient Thermal Impedance (°C/W)
Load Dump Power (W)
10
R
θJA
4000
3000
1
R
θJC
2000
0.1
1000
0
25
50
75
100
125
150
175
0.01
0.01
0.1
1
10
100
Case Temperature (°C)
t - Pulse Width (s)
Fig. 2 -
Load Dump Power Characteristics
(10 ms Exponential Waveform)
Fig. 5 -
Typical Transient Thermal Impedance
150
t
r
= 10 μs
Peak Value
I
PPM
100
C
J
- Junction Capacitance (pF)
Input Peak Pulse Current (%)
T
J
= 25 °C
Pulse Width (t
d
) is
Defined as the Point
Where the Peak Current
Decays to 50 % of I
PPM
100 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Half Value - I
PP
I
PPM
2
50
10 000
Measured at Zero Bias
t
d
0
0
10
20
30
40
1000
10
Measured at
Stand-Off
Voltage V
WM
15
20
25
30
35
40
45
t - Time (ms)
V
WM
- Reverse
Stand-Off
Voltage (V)
Fig. 3 -
Pulse Waveform
Fig. 6 -
Typical Junction Capacitance
Revision: 20-Mar-15
Document Number: 87734
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM8S10AT thru SM8S43AT
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-218AC
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
0.524 (13.3)
0.116 (3.0)
0.093 (2.4)
0.413 (10.5) 0.342 (8.7)
0.374 (9.5) 0.327 (8.3)
Vishay General Semiconductor
Mounting Pad Layout
0.150 (3.8)
0.126 (3.2)
0.091 (2.3)
0.067 (1.7)
0.413 (10.5)
0.374 (9.5)
0.116 (3.0)
0.093 (2.4)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.382 (9.7)
Lead 1
0.197 (5.0)
0.185 (4.7)
0.004 (0.10) (NOM.)
Lead 2 / metal heatsink
0.028 (0.7)
0.020 (0.5)
0.366 (9.3)
0.343 (8.7)
0.606 (15.4)
0.583 (14.8)
0.138 (3.5)
0.098 (2.5)
0.098 (2.5)
0.059 (1.5)
Revision: 20-Mar-15
Document Number: 87734
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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