Preliminary
Datasheet
RJH60F5DPQ-A0
600 V - 40 A - IGBT
High Speed Power Switching
Features
Low collector to emitter saturation voltage
V
CE(sat)
= 1.37 V typ. (I
C
= 40 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
t
r
= 85 ns typ. (at I
C
= 30 A, V
CE
= 400 V, V
GE
= 15 V, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0326EJ0200
Rev.2.00
Jul 22, 2011
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW
5
s,
duty cycle
1%
Symbol
V
CES
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
(peak)
Note2
P
C
j-c
j-cd
Tj
Tstg
Ratings
600
±30
80
40
160
100
260.4
0.48
2.0
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0326EJ0200 Rev.2.00
Jul 22, 2011
Page 1 of 7
RJH60F5DPQ-A0
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
t
d(on)
t
r
t
d(off)
t
f
V
ECF1
V
ECF2
t
rr
Min
4
Typ
1.37
1.7
2780
122
43
53
145
105
85
1.2
1.5
90
Max
100
±1
8
1.8
2.1
Unit
A
A
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
V
ns
Test Conditions
V
CE
= 600V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 40 A, V
GE
= 15 V
Note3
I
C
= 80 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0 V
f = 1 MHz
I
C
= 30 A,
V
CE
= 400 V, V
GE
= 15 V
Rg = 5
Note3
,
Inductive load
I
F
= 20 A
I
F
= 40 A
Note3
Note3
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 3. Pulse test
I
F
= 20 A
di
F
/dt = 100 A/s
R07DS0326EJ0200 Rev.2.00
Jul 22, 2011
Page 2 of 7
RJH60F5DPQ-A0
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
160
Typical Output Characteristics
Pulse Test
Ta = 25
°
C
120
11 V
13 V
15 V
80
9V
9.5 V
10.5 V
10 V
Collector Current I
C
(A)
100
PW
10
=
10
μ
s
10
1
Tc = 25°C
Single pulse
Collector Current I
C
(A)
0
μ
s
40
8.5 V
V
GE
= 8 V
0.1
1
0
10
100
1000
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
160
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
3.0
Ta = 25
°
C
Pulse Test
2.6
I
C
= 20 A
40 A
80 A
Collector Current I
C
(A)
Pulse TestV
V
CE
= 10
Ta = 25
°
C
Pulse Test
120
2.2
80
Tc = 75°C
40
25°C
0
2
–25°C
1.8
1.4
1.0
6
8
10
12
14
16
18
20
4
6
8
10
12
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
−25
40 A
V
GE
= 15 V
Pulse Test
I
C
= 80 A
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
V
CE
= 10 V
Pulse Test
8
I
C
= 10 mA
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
6
1 mA
4
20 A
2
0
25
50
75
100 125 150
0
−25
0
25
50
75
100 125 150
Junction Temparature Tj (
°
C)
Junction Temparature Tj (
°
C)
R07DS0326EJ0200 Rev.2.00
Jul 22, 2011
Page 3 of 7
RJH60F5DPQ-A0
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage
10000
V
GE
= 0 V
f = 1 MHz
Forward Current vs. Forward Voltage (Typical)
100
Diode Forward Current I
F
(A)
Cies
Capacitance C (pF)
80
1000
60
40
V
GE
= 0 V
Ta = 25
°
C
Pulse Test
0
1
2
3
4
100
Coes
Ta = 25
°
C
10
0
50
100
150
200
250
300
Cres
20
0
C-E Diode Forward Voltage V
CEF
(V)
Collector to Emitter Voltage V
CE
(V)
Dynamic Input Characteristics (Typical)
Collector to Emitter Voltage V
CE
(V)
V
GE
V
CE
V
CC
= 300 V
600 V
400
8
600
12
200
V
CC
= 600 V
300 V
I
C
= 40 A
Ta = 25
°
C
4
0
0
20
40
60
80
0
100
Gate Charge Qg (nc)
R07DS0326EJ0200 Rev.2.00
Jul 22, 2011
Gate to Emitter Voltage V
GE
(V)
800
16
Page 4 of 7
RJH60F5DPQ-A0
Switching Characteristics (Typical) (1)
1000
Preliminary
Switching Characteristics (Typical) (2)
100000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
10000
V
CC
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
Tj = 150
°
C
Eon includes the diode recovery
tf
td(off)
100
tr
td(on)
V
CC
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
Tj = 150
°
C
tr includes the diode recovery
1
10
100 200
1000
Eoff
100
Eon
10
1
10
100 200
10
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
240
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
1600
Swithing Energy Losses E (μJ)
Switching Times t (ns)
200
160
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
tr includes the diode recovery
tf
1200
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
Eon includes the diode recovery
Eoff
120
80
40
0
0
td(off)
tr
td(on)
800
Eon
400
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Junction Temperature Tj (°C)
(Inductive load)
Junction Temperature Tj (°C)
(Inductive load)
R07DS0326EJ0200 Rev.2.00
Jul 22, 2011
Page 5 of 7
stm32/stm8
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