BGU7003W
Wideband silicon germanium low-noise amplifier MMIC
Rev. 2 — 11 April 2013
Product data sheet
1. Product profile
1.1 General description
The BGU7003W MMIC is a wideband amplifier in SiGe:C technology for high speed,
low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT886
package.
Table 1.
Application information
T
amb
= 25
C; V
CC
= 2.85 V; I
CC(tot)
= 3.2 mA
[1]
; V
ENABLE
0.7 V; f = 100 MHz; Z
S
= Z
L
= 50
unless
otherwise specified. All measurements are done with the SMA-connectors as reference plane.
Application
high-ohmic FM LNA
[1]
[2]
NF
(dB)
1.2
s
21
2
(dB)
13
RL
in
(dB)
0.5
RL
out
(dB)
16.5
P
i(1dB)
(dBm)
23
P
L(1dB)
(dBm)
11
IP3
I
(dBm)
15
[2]
IP3
O
(dBm)
2
[2]
I
CC(tot)
= I
CC
+ I
RF_OUT
+ I
R_BIAS
.
The third order intercept point is measured at
30
dBm per tone at RF_IN (f
1
= 100 MHz; f
2
= 100.2 MHz)
1.2 Features and benefits
Low noise high gain microwave MMIC
Applicable between 40 MHz and 6 GHz
Integrated temperature stabilized bias for easy design
Bias current configurable with external resistor
110 GHz transit frequency - SiGe:C technology
Power-down mode current consumption < 1
A
ESD protection > 1 kV Human Body Model (HBM) on all pins
1.3 Applications
GPS
FM LNA
Low-noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog / digital cordless applications
NXP Semiconductors
BGU7003W
Wideband silicon germanium low-noise amplifier MMIC
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
R_BIAS
RF_IN
GND
RF_OUT
ENABLE
V
CC
1
2
3
Transparent
top view
1
3
sym128
Simplified outline
6
5
4
Graphic symbol
5
6
2
4
3. Ordering information
Table 3.
Ordering information
Package
Name
BGU7003W
XSON6
Description
Version
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1
1.45
0.5 mm
Type number
4. Marking
Table 4.
Marking codes
Marking code
UW
Type number
BGU7003W
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC
I
CC(tot)
P
tot
T
stg
T
j
[1]
Parameter
supply voltage
total supply current
total power dissipation
storage temperature
junction temperature
Conditions
RF input AC coupled
configurable with external resistor
T
sp
103
C
[1]
Min Max
-
-
-
65
-
3.0
25
70
+150
150
Unit
V
mA
mW
C
C
T
sp
is the temperature at the solder point of the ground lead.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
BGU7003W
Thermal characteristics
Parameter
thermal resistance from junction to solder point
All information provided in this document is subject to legal disclaimers.
Conditions
Typ
235
Unit
K/W
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 11 April 2013
2 of 14
NXP Semiconductors
BGU7003W
Wideband silicon germanium low-noise amplifier MMIC
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
C; V
CC
= 2.5 V; I
CC(tot)
= 5.0 mA; V
ENABLE
0.7 V unless otherwise specified. All
measurements done on characterization board without matching, de-embedded up to the pins.
Symbol
V
CC
I
CC(tot)
Parameter
supply voltage
total supply current
Conditions
RF input AC coupled
configurable with
external resistor
V
ENABLE
0.4 V
T
amb
s
21
2
ambient temperature
insertion power gain
T
amb
= 25
C
f = 100 MHz
f = 900 MHz
f = 1.575 GHz
f = 2.4 GHz
f = 5.8 GHz
40 C
T
amb
+85
C
f = 100 MHz
f = 900 MHz
f = 1.575 GHz
f = 2.4 GHz
f = 5.8 GHz
MSG
maximum stable gain
f = 100 MHz
f = 900 MHz
f = 1.575 GHz
f = 2.4 GHz
f = 5.8 GHz
NF
min
minimum noise figure
f = 100 MHz
f = 900 MHz
f = 1.575 GHz
f = 2.4 GHz
f = 5.8 GHz
[1]
[2]
I
CC(tot)
= I
CC
+ I
RF_OUT
+ I
R_BIAS
.
Guaranteed by design and characterization.
[2]
[2]
[2]
[2]
[2]
[2]
[2]
[2]
[2]
[1]
Min
2.2
3
-
40
21.0
18.5
16.0
14.0
10.0
20.0
17.5
15.0
13.0
9.0
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
+25
22.5
20.0
17.5
15.2
11.4
22.5
20.0
17.5
15.2
11.4
33.8
23.8
20.5
17.8
15.4
0.6
0.6
0.7
0.8
1.5
Max
2.85
15
0.001
+85
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
mA
mA
C
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
[1]
Table 8.
ENABLE (pin 5)
40
C
T
amb
+85
C
V
ENABLE
(V)
0.4
0.7
State
OFF
ON
BGU7003W
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 11 April 2013
3 of 14
NXP Semiconductors
BGU7003W
Wideband silicon germanium low-noise amplifier MMIC
30
I
CC(tot)
(mA)
20
(2)
001aaj652
(3)
10
(1)
0
0
1000
2000
3000
4000
5000
6000 7000
R
bias
(Ω)
T
amb
= 25
C.
(1) V
CC
= 2.2 V
(2) V
CC
= 2.5 V
(3) V
CC
= 2.85 V
Fig 1.
Total supply current as a function of bias resistor; typical values
90°
+1
135°
+0.5
+2
45°
1.0
0.8
0.6
0.4
0.2
180°
0
0.2
0.5
6 GHz
100 MHz
-0.2
-5
1
2
5
10
0°
0
+0.2
+5
-135°
-0.5
-1
-90°
-2
-45°
1.0
001aaj653
T
amb
= 25
C;
I
CC(tot)
= 5.0 mA; V
CC
= 2.5 V; P
drive
=
30
dBm; Z
0
= 50
.
Fig 2.
Input reflection coefficient (S
11
); typical values
BGU7003W
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 11 April 2013
4 of 14
NXP Semiconductors
BGU7003W
Wideband silicon germanium low-noise amplifier MMIC
90°
+1
135°
+0.5
+2
45°
1.0
0.8
0.6
0.4
0.2
180°
0
0.2
0.5
1
2
5
10
0°
0
+0.2
+5
100 MHz
-0.2
6 GHz
-5
-135°
-0.5
-1
-90°
-2
-45°
1.0
001aaj654
T
amb
= 25
C;
I
CC(tot)
= 5.0 mA; V
CC
= 2.5 V; P
drive
=
30
dBm; Z
0
= 50
.
Fig 3.
Output reflection coefficient (S
22
); typical values
30
|s
21
|
2
(dB)
20
001aaj655
0
|s
12
|
2
(dB)
−20
001aaj657
10
−40
0
0
2000
4000
f (MHz)
6000
−60
0
2000
4000
f (MHz)
6000
T
amb
= 25
C;
I
CC(tot)
= 5.0 mA; V
CC
= 2.5 V;
P
drive
=
30
dBm; Z
0
= 50
.
T
amb
= 25
C;
I
CC(tot)
= 5.0 mA; V
CC
= 2.5 V;
P
drive
=
30
dBm; Z
0
= 50
.
Fig 4.
Insertion power gain (s
21
2
) as a function of
frequency; typical values
Fig 5.
Isolation (s
12
2
) as a function of frequency;
typical values
BGU7003W
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 11 April 2013
5 of 14
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