SS32 - SS320
Taiwan Semiconductor
3A, 20V - 200V Surface Mount Schottky Barrier Rectifier
FEATURES
●
●
●
●
●
Low power loss, high efficiency
Ideal for automated placement
Guard ring for over-voltage protection
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
Package
Configuration
VALUE
3
20 - 200
UNIT
A
V
DO-214AB (SMC)
Single die
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
MECHANICAL DATA
●
●
●
●
Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
DO-214AB (SMC)
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.21 g (approximately)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3
ms single half sine-wave
superimposed on rated load per
diode
Critical rate of rise of off-state
voltage
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
100
SYMBOL
SS
32
SS
32
20
14
20
SS
33
SS
33
30
21
30
SS
34
SS
34
40
28
40
SS
35
SS
35
50
35
50
SS
36
SS
36
60
42
60
3
75
SS
39
SS
39
90
63
90
SS
310
SS
310
100
70
100
SS
315
SS
315
150
105
150
SS
320
SS
320
200
140
200
UNIT
V
V
V
A
A
dV/dt
T
J
T
STG
- 55 to +125
10,000
- 55 to +150
- 55 to +150
V/µs
°C
°C
1
Version:M1708
SS32 - SS320
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance per diode
Junction-to-ambient thermal resistance per diode
SYMBOL
R
ӨJL
R
ӨJA
LIMIT
17
55
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
SS32
SS33
SS34
SS35
SS36
SS39
SS310
SS315
SS320
SS32
SS33
SS34
SS35
SS36
SS39
SS310
SS315
SS320
SS32
SS33
SS34
SS35
SS36
SS39
SS310
SS315
SS320
SS32
SS33
SS34
SS35
SS36
SS39
SS310
SS315
SS320
SS32
SS33
SS34
SS35
SS36
SS39
SS310
SS315
SS320
CONDITIONS
SYMBOL
TYP.
-
-
-
-
-
-
-
-
MAX.
0.50
0.75
0.85
0.95
0.40
0.65
0.70
0.80
UNIT
V
V
V
V
V
V
V
V
Forward voltage per diode
(1)
I
F
= 3A, T
J
= 25°C
V
F
Forward voltage per diode
(1)
I
F
= 3A, T
J
= 100°C
V
F
-
T
J
= 25°C
I
R
-
0.5
mA
Reverse current @ rated V
R
per
(2)
diode
0.1
mA
-
-
10
5
mA
mA
Reverse current @ rated V
R
per
(2)
diode
T
J
= 100°C
I
R
-
-
mA
-
-
-
-
mA
mA
Reverse current @ rated V
R
per
(2)
diode
T
J
= 125°C
I
R
-
0.5
mA
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2
Version:M1708
SS32 - SS320
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING
CODE
R7
R6
SS3xx
(Note 1)
H
M6
V7
V6
Note :
1. "xx" defines voltage from 20V (SS32) to 200V (SS320)
G
PACKING CODE
SUFFIX
PACKAGE
SMC
SMC
SMC
Matrix SMC
Matrix SMC
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
850 / 7" Plastic reel
3,000 / 13" Plastic reel
EXAMPLE
EXAMPLE P/N
SS32HR7G
PART NO.
SS32
PART NO.
SUFFIX
H
PACKING
CODE
R7
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
3
Version:M1708
SS32 - SS320
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
3.5
AVERAGE FORWARD CURRENT (A)
SS35 - SS320
1000
SS32 - SS34
SS35 - SS36
CAPACITANCE (pF)
Fig.2 Typical Junction Capacitance
3
2.5
2
1.5
1
0.5
0
25
50
75
100
125
150
LEAD TEMPERATURE (
°
C)
RESISTIVE OR
INDUCTIVE LOAD
10
0.1
1
SS32 - SS34
100
SS39 - SS320
f=1.0MHz
Vsig=50mVp-p
10
100
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (mA)
100
T
J
=125
°
C
10
INSTANTANEOUS FORWARD CURRENT (A)
100
10
Fig.4 Typical Forward Characteristics
SS35 - SS36
1
SS32 - SS34
10
T
J
=125°C
0.1
T =25°C
SS315
J
SS320
-
UF1DLW
1
T
J
=75
°
C
0.1
T
J
=25
°
C
0.01
1
0.01
SS39 - SS310
Pulse width
Pules width=300μs
1%
0.9
0.8
duty cycle
1
1.1
1
1.2
1.4
1.6
0.001
0
20
40
60
80
SS32 - SS34
SS35 - SS320
100
120
140
0.001
0.1
0
0.3
0.2
0.4
0.5
0.4
0.6
0.6
0.7
0.8
1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:M1708
(A)
SS32 - SS320
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
100
8.3ms Single Half Sine Wave
80
TRANSIENT THERMAL IMPEDANCE(℃/ W)
PEAK FORWARD SURGE CURRENT (A)
Fig.6 Typical Transient Thermal Characteristics
100
60
10
40
SS32-SS34
1
20
SS35-SS320
0
1
10
100
0.1
0.01
0.1
1
10
100
T-PULSE DURATION (s)
NUMBER OF CYCLES AT 60 Hz
5
Version:M1708
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