THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ3419AEEV
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
I
D(on)
V
GS
= 0 V
V
GS
= 0 V
V
GS
= -10 V
V
GS
= -10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -10 V
V
GS
= -10 V
V
GS
= -4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= -20 V, R
L
= 5
Ω
I
D
≅
-4 A, V
GEN
= -10 V, R
g
= 1
Ω
f = 1 MHz
V
GS
= -4.5 V
V
DS
= -20 V, I
D
= -4 A
V
GS
= 0 V
V
DS
= -20 V, f = 1 MHz
-
-
-
-
-
-
2.6
-
-
-
-
733
130
84
8.4
2.4
4.1
5.3
9
24
26
31
975
175
115
12.5
-
-
7.9
12
32
34
41
ns
Ω
nC
pF
g
fs
V
DS
= -40 V
V
DS
= -40 V, T
J
= 125 °C
V
DS
= -40 V, T
J
= 175 °C
V
DS
= -5 V
I
D
= -2.5 A
I
D
= -2.5 A, T
J
= 125 °C
I
D
= -2.5 A, T
J
= 175 °C
I
D
= -2 A
-40
-1.5
-
-
-
-
-
-10
-
-
-
-
-
-
-2.0
-
-
-
-
-
-
0.048
0.070
0.081
0.077
10
-
-2.5
±2
± 30
-1
-50
-150
-
0.061
-
-
0.093
-
S
Ω
A
μA
V
μA
mA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= -15 V, I
D
= -4 A
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
Forward Voltage
I
SM
V
SD
I
F
= -1.6 A, V
GS
= 0 V
-
-
-
-0.75
-27
-1.1
A
V
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2284-Rev. A, 28-Sep-15
Document Number: 65332
2
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ3419AEEV
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
30
V
GS
= 10 V thru 6 V
24
I
D
- Drain Current (A)
V
GS
= 5 V
18
I
D
- Drain Current (A)
8
10
Vishay Siliconix
6
T
C
= 25
°C
4
12
V
GS
= 4 V
6
V
GS
= 3 V
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 2 V
2
T
C
= 125
°C
0
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
T
C
= - 55
°C
Output Characteristics
30
15
Transfer Characteristics
T
C
= - 55
°C
24
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
12
T
C
= 25
°C
18
9
T
C
= 125
°C
6
12
T
C
= 25
°C
6
T
C
= 125
°C
0
0
T
C
= - 55
°C
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
3
0
0
2
4
6
I
D
- Drain Current (A)
8
10
Transfer Characteristics
0.25
1200
Transconductance
0.20
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
1000
C
iss
800
0.15
V
GS
= 4.5 V
0.10
600
400
C
oss
0.05
V
GS
= 10 V
0.00
0
6
12
18
I
D
- Drain Current (A)
24
30
200
C
rss
0
0
10
20
30
40
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
S15-2284-Rev. A, 28-Sep-15
Capacitance
Document Number: 65332
3
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQ3419AEEV
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
6
I
D
= 4 A
V
DS
= 20 V
0.7
V
GS(th)
Variance (V)
I
D
= 250 μA
0.4
I
D
= 5 mA
0.1
1.0
Vishay Siliconix
V
GS
- Gate-to-Source Voltage (V)
5
4
3
2
1
- 0.2
0
0
2
4
6
8
Q
g
- Total Gate Charge (nC)
10
- 0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
Gate Charge
2.0
R
DS(on)
- On-Resistance (Normalized)
I
D
= 5 A
1.7
I
S
-
Source
Current (A)
V
GS
= 10 V
1.4
V
GS
= 4.5 V
10
100
Threshold Voltage
T
J
= 150
°C
1
T
J
= 25
°C
1.1
0.1
0.8
0.01
0.5
- 50 - 25
0.001
0
25
50
75
100
125
150
175
0.0
0.6
1.2
1.8
2.4
3.0
T
J
- Junction Temperature (°C)
V
SD
-
Source-to-Drain
Voltage (V)
On-Resistance vs. Junction Temperature
0.25
- 40
Source Drain Diode Forward Voltage
V
DS
- Drain-to-Source Voltage (V)
0.20
R
DS(on)
- On-Resistance (Ω)
- 43
I
D
= 1 mA
- 46
0.15
T
J
= 150
°C
0.10
- 49
0.05
T
J
= 25
°C
0.00
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
- 52
- 55
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
S15-2284-Rev. A, 28-Sep-15
Drain Source Breakdown vs. Junction Temperature
Document Number: 65332
4
For technical questions, contact:
automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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