TSM13N50A
500V N-Channel MOSFET
ITO-220
TO-220
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
V
DS
R
DS(on)
(max)
Q
g
Value
500
0.48
31
Unit
V
Ω
nC
Features
●
●
Improved dv/dt capability
100% EAS Guaranteed
Block Diagram
TSM13N50ACI C0G
ITO-220
50pcs / Tube
TSM13N50ACZ C0G
TO-220
50pcs / Tube
Note:
“G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
mm
Symbol
V
DS
V
GS
I
D
I
DM
P
DTOT
E
AS
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
e co
Absolute Maximum Ratings
(T
C
=25
o
C unless otherwise noted)
en
N-Channel MOSFET
de
Limit
500
±30
13
8
52
52
542
- 55 to +150
Part No.
Package
Packing
d
Unit
V
V
A
A
W
mJ
o
Ordering Information
No
(Note 1)
(Note 1,2,3)
Total Power Dissipation @ T
C
=25
o
C
Single Pulsed Avalanche Energy
(Note 4)
Operating Junction and Storage Temperature Range
tR
T
C
= 25
o
C
T
C
= 100
o
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
Symbol
R
ӨJC
R
ӨJA
Limit
ITO220
2.4
65
TO-220
0.6
62.5
Unit
o
o
C/W
C/W
1/7
Version: B14
TSM13N50A
500V N-Channel MOSFET
Electrical Specifications
(T
C
=25
o
C unless otherwise noted)
Parameter
Static
(Note 5)
Conditions
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±30V, V
DS
= 0V
V
DS
= 500V, V
GS
= 0V
V
GS
= 10V, I
D
=6.5A
Symbol
BV
DSS
V
GS(TH)
I
GSS
I
DSS
R
DS(ON)
Min
500
2
--
--
--
Typ
--
--
--
--
0.38
Max
--
4
±100
1
0.48
Unit
V
V
nA
µA
Ω
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Dynamic
(Note 6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
(Note 6)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
Q
g
V
DS
= 400V, I
D
= 13A,
V
GS
= 10V
Q
gs
--
--
31
11
7
1965
185
11
40
--
--
--
--
--
pF
nC
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
en
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
mm
de
Q
gd
--
--
C
iss
--
--
--
--
--
--
--
d
32
18
79
16
--
--
--
--
ns
Forward On Voltage
I
S
=13A, V
GS
=0V
Notes:
1. Current limited by package
2. Pulse width limited by the maximum junction temperature
3. Pulse width limited by safe operating area
o
4. L=15mH, I
AS
=8.5A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25 C
5. Pulse test: pulse width ≤300µS, duty cycle ≤2%
6. Guaranteed by design, not subject to production testing.
tR
e co
V
DD
= 200V
R
GEN
= 25Ω
I
D
= 13A, V
GS
= 10V
--
1.4
V
No
2/7
Version: B14
TSM13N50A
500V N-Channel MOSFET
Electrical Characteristics Curves
Output Characteristics
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
No
tR
Source-Drain Diode Forward Voltage
3/7
e co
mm
Version: B14
en
de
Gate Charge
d
TSM13N50A
500V N-Channel MOSFET
Electrical Characteristics Curves
Threshold Voltage vs. Junction Temperature
Maximum Safe Operating Area
Normalized Thermal Transient Impedance Curve
No
4/7
tR
e co
mm
Version: B14
en
de
d
TSM13N50A
500V N-Channel MOSFET
ITO-220 Mechanical Drawing
mm
Marking Diagram
en
Unit: Millimeters
No
tR
G
Y
WW
F
= Halogen Free
= Year Code
= Week Code (01~52)
= Factory Code
e co
5/7
de
Version: B14
d
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