DATASHEET
ISL70417SEH
Radiation Hardened 40V Quad Precision Low Power Operational Amplifiers
The
ISL70417SEH
contains four very high precision amplifiers
featuring the perfect combination of low noise vs power
consumption. Low offset voltage, low I
BIAS
current and low
temperature drift making them the ideal choice for
applications requiring both high DC accuracy and AC
performance. The combination of high precision, low noise, low
power and small footprint provides the user with outstanding
value and flexibility relative to similar competitive parts.
Applications for these amplifiers include precision active
filters, medical and analytical instrumentation, precision
power supply controls, and industrial controls.
The ISL70417SEH is offered in a 14 Ld hermetic ceramic
flatpack package. The device is offered in an industry standard
pin configuration and operates across the extended
temperature range from -55°C to +125°C.
FN7962
Rev 4.00
July 20, 2016
Features
• Electrically screened to DLA SMD#
5962-12228
• Low input offset voltage. . . . . . . . . . . . . . ±110µV, maximum
• Superb offset temperature coefficient. . .1µV/°C, maximum
• Input bias current . . . . . . . . . . . . . . . . . . . . . .±5nA, maximum
• Input bias current TC . . . . . . . . . . . . . . . ±5pA/°C, maximum
• Low current consumption . . . . . . . . . . . . . . . . . . . . . . . 440µA
• Voltage noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/√Hz
• Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 40V
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation environment
- SEB LET
TH
(V
S
= ±20V) . . . . . . . . . . . . . . 73.9MeV•cm
2
/mg
- Total dose, high dose rate . . . . . . . . . . . . . . . . . 300krad(Si)
- Total dose, low dose rate . . . . . . . . . . . . . . . . 100krad(Si)*
- SEL immune (SOI process)
* Product capability established by initial characterization. The
EH version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate.
Applications
• Precision instrumentation
• Spectral analysis equipment
• Active filter blocks
• Thermocouples and RTD reference buffers
• Data acquisition
• Power supply control
Related Literature
•
AN1768,
“ISL70417SEHEVAL1Z Evaluation Board User’s
Guide”
•
AN1785,
“Single Event Effects Testing of the ISL70417SEH,
Quad 40V Rad Hard Precision Operation Amplifiers”
•
AN1792,
“Total Dose Testing of the ISL70417SEH Radiation
Hardened Quad Operational Amplifier”
•
AN1813,
“ISL70417SEH SPICE Macro-Model”
6
C
1
8.2nF
4
2
V
OS
(µV)
V
+
-
0
-2
-4
-6
V
-
-8
0
GND
V
IN
R
1
1.84k
R
2
4.93k
3.3nF
ISL70417SEH
OUTPUT
BIAS
+
C
2
V
S
= ±15V
50
100
150
krad(Si)
200
250
300
SALLEN-KEY LOW PASS FILTER (f
C
= 10kHz)
FIGURE 1. TYPICAL APPLICATION
FIGURE 2. V
OS
SHIFT vs HIGH DOSE RATE RADIATION
FN7962 Rev 4.00
July 20, 2016
Page 1 of 22
ISL70417SEH
Ordering Information
ORDERING SMD NUMBER
(Note
2)
5962F1222801VXC
N/A
5962F1222801V9AX
N/A
N/A
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed must be
used when ordering.
PART NUMBER
(Note
1)
ISL70417SEHVF
ISL70417SEHF/PROTO
ISL70417SEHVX
ISL70417SEHX/SAMPLE
ISL70417SEHEVAL1Z
TEMPERATURE RANGE
(°C)
-55 to +125
-55 to +125
-55 to +125
-55 to +125
Evaluation Board
PACKAGE
(RoHS COMPLIANT)
14 Ld Flatpack
14 Ld Flatpack
DIE
DIE
K14.A
K14.A
PKG.
DWG. #
FN7962 Rev 4.00
July 20, 2016
Page 2 of 22
ISL70417SEH
Pin Configuration
ISL70417SEH
(14 LD FLATPACK)
TOP VIEW
OUT_A
-IN_A
+IN_A
V+
+IN_B
-IN_B
OUT_B
1
2
3
4
5
6
7
- +
B
+ -
C
A
- +
D
+ -
14
13
12
11
10
9
8
OUT_D
-IN_D
+IN_D
V-
+IN_C
-IN_C
OUT_C
Pin Descriptions
PIN NUMBER
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PIN NAME
OUT_A
-IN_A
+IN_A
V+
+IN_B
-IN_B
OUT_B
OUT_C
-IN_C
+IN_C
V-
+IN_D
-IN_D
OUT_D
V+
500Ω
IN-
500Ω
IN+
V+
OUT
V-
CIRCUIT 2
V-
EQUIVALENT CIRCUIT
Circuit 2
Circuit 1
Circuit 1
Circuit 3
Circuit 1
Circuit 1
Circuit 2
Circuit 2
Circuit 1
Circuit 1
Circuit 3
Circuit 1
Circuit 1
Circuit 2
Amplifier A output
DESCRIPTION
Amplifier A inverting input
Amplifier A noninverting input
Positive power supply
Amplifier B noninverting input
Amplifier B inverting input
Amplifier B output
Amplifier C output
Amplifier C inverting input
Amplifier C noninverting input
Negative power supply
Amplifier D noninverting input
Amplifier D inverting input
Amplifier D output
V+
CAPACITIVELY
COUPLED
ESD CLAMP
CIRCUIT 3
V-
CIRCUIT 1
FN7962 Rev 4.00
July 20, 2016
Page 3 of 22
ISL70417SEH
Absolute Maximum Ratings
Maximum Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V
Maximum Supply Voltage (LET = 73.9MeV•cm
2
/mg) . . . . . . . . . . . . . 40V
Maximum Differential Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Maximum Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Minimum/Maximum Input Voltage . . . . . . . . . . . . . . V- - 0.5V to V+ + 0.5V
Maximum/Minimum Input Current for Input Voltage >V+ or <V- . . . . ±20mA
Output Short-Circuit Duration (1 output at a time). . . . . . . . . . . . Indefinite
ESD Rating
Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 2kV
Machine Model (Tested per EIA/JESD22-A115-A) . . . . . . . . . . . . . . 300V
Charged Device Model (Tested per JESD22-C101D) . . . . . . . . . . . . . 2kV
Thermal Information
Thermal Resistance (Typical)
JA
(°C/W)
JC
(°C/W)
14 Ld Flatpack (Notes
3, 4).
. . . . . . . . . . . .
105
15
Maximum Storage Temperature Range . . . . . . . . . . . . . .-65°C to +150°C
Maximum Junction Temperature (T
JMAX
) . . . . . . . . . . . . . . . . . . . . .+150°C
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V (±2.25V) to 30V (±15V)
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3.
JA
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief
TB379
for details.
4. For
JC
, the “case temp” location is the center of the ceramic on the package underside.
Electrical Specifications (V
S
±15V)
V
CM
= 0, V
O
= 0V, T
A
= +25°C, unless otherwise noted. Boldface limits apply across the
operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 to 300krad(Si)/s; and
over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s.
PARAMETER
V
OS
DESCRIPTION
Input Offset Voltage
TEST CONDITIONS
MIN
(Note
5)
TYP
10
MAX
(Note
5)
85
110
TCV
OS
I
B
Offset Voltage Drift
Input Bias Current
T
A
= -55°C, +125°C
T
A
= +25°C, post radiation
TCI
B
I
OS
Input Bias Current Temperature Coefficient
Input Offset Current
T
A
= -55°C, +125°C
T
A
= +25°C, post radiation
TCI
OS
V
CM
CMRR
Input Offset Current Temperature
Coefficient
Input Voltage Range
Common-Mode Rejection Ratio
Guaranteed by CMRR test
V
CM
= -13V to +13V
-2.5
-5
-15
-5
-2.50
-3
-6
-3
-13
120
120
PSRR
Power Supply Rejection Ratio
V
S
= ±2.25V to ±20V
120
120
A
VOL
V
OH
Open-Loop Gain
Output Voltage High
V
O
= -13V to +13V, R
L
= 10kΩ to ground
R
L
= 10kΩ to ground
3,000
13.5
13.2
R
L
= 2kΩ to ground
13.30
13.0
13.55
14,000
13.7
145
145
0.42
1
0.08
0.1
0.08
1
2.50
5
15
5
2.50
3
6
3
13
UNIT
µV
µV
µV/°C
nA
nA
nA
pA/°C
nA
nA
nA
pA/°C
V
dB
dB
dB
dB
V/mV
V
V
V
V
FN7962 Rev 4.00
July 20, 2016
Page 4 of 22
ISL70417SEH
Electrical Specifications (V
S
±15V)
V
CM
= 0, V
O
= 0V, T
A
= +25°C, unless otherwise noted. Boldface limits apply across the
operating temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 to 300krad(Si)/s; and
over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued)
PARAMETER
V
OL
DESCRIPTION
Output Voltage Low
TEST CONDITIONS
R
L
= 10kΩ to ground
MIN
(Note
5)
TYP
-13.7
MAX
(Note
5)
-13.5
-13.2
R
L
= 2kΩ to ground
-13.55
-13.30
-13.0
I
S
Supply Current/Amplifier
0.44
0.53
0.68
I
SC
V
SUPPLY
Short-Circuit Current
Supply Voltage Range
Guaranteed by PSRR
±2.25
43
±20
UNIT
V
V
V
V
mA
mA
mA
V
AC SPECIFICATIONS
GBWP
e
nVp-p
e
n
Gain Bandwidth Product
Voltage Noise V
P-P
Voltage Noise Density
A
V
= 1k, R
L
= 2kΩ
0.1Hz to 10Hz
f = 10Hz
f = 100Hz
f = 1kHz
f = 10kHz
in
THD + N
Current Noise Density
Total Harmonic Distortion
f = 1kHz
1kHz, G = 1, V
O
= 3.5V
RMS
, R
L
= 2kΩ
1kHz, G = 1, V
O
= 3.5V
RMS
, R
L
= 10kΩ
TRANSIENT RESPONSE
SR
Slew Rate, V
OUT
20% to 80%
A
V
= 11, R
L
= 2kΩ, V
O
= 4V
P-P
0.3
0.2
t
r
, t
f
,
Small Signal
Rise Time
10% to 90% of V
OUT
Fall Time
90% to 10% of V
OUT
t
s
Settling Time to 0.1%
10V Step; 10% to V
OUT
Settling Time to 0.01%
10V Step; 10% to V
OUT
Settling Time to 0.1%
4V Step; 10% to V
OUT
Settling Time to 0.01%
4V Step; 10% to V
OUT
t
OL
Output Positive Overload Recovery Time
Output Negative Overload Recovery Time
OS+
Positive Overshoot
A
V
= 1, V
OUT
= 50mV
P-P
, R
L
= 10kΩ to V
CM
130
450
625
A
V
= 1, V
OUT
= 50mV
P-P
, R
L
= 10kΩ to V
CM
130
600
700
A
V
= -1, V
OUT
= 10V
P-P
, R
L
= 5kΩ to V
CM
A
V
= -1, V
OUT
= 10V
P-P
, R
L
= 5kΩ to V
CM
A
V
= -1, V
OUT
= 4V
P-P
, R
L
= 5kΩ to V
CM
A
V
= -1, V
OUT
= 4V
P-P
, R
L
= 5kΩ to V
CM
A
V
= -100, VIN = 0.2V
P-P
, R
L
= 2kΩ to V
CM
A
V
= -100, VIN = 0.2V
P-P
, R
L
= 2kΩ to V
CM
A
V
= 1, V
OUT
= 10V
P-P
, R
f
= 0Ω, R
L
= 2kΩ to V
CM
21
24
13
18
5.6
10.6
15
33
OS-
Negative Overshoot
A
V
= 1, V
OUT
= 10V
P-P
, R
f
= 0Ω, R
L
= 2kΩ to V
CM
15
33
0.5
V/µs
V/µs
ns
ns
ns
ns
µs
µs
µs
µs
µs
µs
%
%
%
%
1.5
0.25
10
8.2
8
8
0.1
0.0009
0.0005
MHz
µV
P-P
nV/√Hz
nV/√Hz
nV/√Hz
nV/√Hz
pA/√Hz
%
%
FN7962 Rev 4.00
July 20, 2016
Page 5 of 22
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