REVISIONS
LTR
A
Add device type 02. - ro
DESCRIPTION
DATE (YR-MO-DA)
17-04-11
APPROVED
C. SAFFLE
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
REV
SHEET
PREPARED BY
RICK OFFICER
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
RAJSEH PITHADIA
APPROVED BY
CHARLES F. SAFFLE
DRAWING APPROVAL DATE
15-10-01
REVISION LEVEL
A
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
MICROCIRCUIT, LINEAR, LOW NOISE
INSTRUMENTATION AMPLIFIER, MONOLITHIC
SILICON
SIZE
A
CAGE CODE
AMSC N/A
67268
SHEET
1 OF 14
5962-14205
DSCC FORM 2233
APR 97
5962-E276-17
DISTRIBUTION STATEMENT A. Approved for public release.
Distribution is unlimited.
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and
space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
R
14205
01
V
X
A
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
Generic number
AD8229S
AD8229S
Circuit function
Low noise instrumentation amplifier
Low noise instrumentation amplifier
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Q or V
Device requirements documentation
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Descriptive designator
CDFP3-F14
Terminals
14
Package style
Bottom brazed flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-14205
SHEET
A
2
1.3 Absolute maximum ratings. 1/
Supply voltage (+V
S
to –V
S
) ...................................................................................................................... 36 V
Output short circuit current duration ........................................................................................................... Indefinite
Maximum voltage at –IN, +IN .....................................................................................................................
V
S
2/
Differential input voltage –IN to +IN, gain
4 .............................................................................................
V
S
2/
Differential input voltage –IN to +IN, 4
gain
50 .....................................................................................
50
V / Gain 2/
Differential input voltage –IN to +IN, gain
50 ...........................................................................................
1
V 2/
Maximum voltage at REF ...........................................................................................................................
V
S
2/
Storage temperature range ........................................................................................................................ -65C to +150C
Power dissipation (P
D
) ............................................................................................................................... 400 mW 3/
Lead temperature (soldering, 10 seconds) ................................................................................................. +300C
Junction temperature (T
J
) .......................................................................................................................... +150C
Thermal resistance, junction-to-case (
JC
) ................................................................................................ 27C/W 4/
Thermal resistance, junction-to-ambient (
JA
) ........................................................................................... 50C/W 4/
1.4 Recommended operating conditions.
Supply voltage (V
S
) ..................................................................................................................................
5
V to
15
V
Ambient operating temperature range (T
A
) ................................................................................................ -55C to +125C
Gain set by R
G
resistor across the two R
G
pins per G = 1 + ( 6 k / R
G
)
Acceptable value range; for R
G
=
(open) for G = 1 to R
G
= 6.006
for G = 1000.
1.5 Operating performance characteristics. 5/
Input / output characteristics:
Gain nonlinearity R
L
= 10 k, V
OUT
=
10
V, G = 1 to 1000 .................................................................
Gain temperature drift: G = 1 .................................................................................................................
Gain temperature drift: G
1 ..................................................................................................................
CMRR dc to 60 Hz with 1 k imbalance, V
CM
=
10
V, G = 1 ...............................................................
2 ppm
2 ppm/C
-100 ppm/C
90 dB
CMRR dc to 60 Hz with 1 k imbalance, V
CM
=
10
V, G = 10 ............................................................. 110 dB
CMRR dc to 60 Hz with 1 k imbalance, V
CM
=
10
V, G = 100 ........................................................... 130 dB
CMRR dc to 60 Hz with 1 k imbalance, V
CM
=
10
V, G = 1000 ......................................................... 140 dB
CMRR at 5 kHz, V
CM
=
10
V, G = 1 ..................................................................................................... 80 dB
CMRR at 5 kHz, V
CM
=
10
V, G = 10 to 1000 ...................................................................................... 90 dB
Offset referred to input (RTI) versus supply (PSRR), V
S
=
5
V to
15
V, G = 10 ................................. 120 dB
Offset referred to input (RTI) versus supply (PSRR), V
S
=
5
V to
15
V, G = 100\1000 ...................... 130 dB
______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ For voltages beyond these limits, use input protection resistors. See manufacturer’s datasheet for more application
information regarding these specifications.
3/ Include supply and output drive current for total power dissipation in actual application. Absolute maximum power limited
by application actual maximum operating temperature and actual
JA
to prevent exceeding absolute maximum T
J
limit.
4/ Measurement taken under absolute worst case condition and represent data taken with thermal camera for highest power
density location. See MIL-STD-1835 for average package
JA
number.
5/
Unless otherwise specified,
V
S
=
15
V, V
REF
= 0 V, T
A
= 25C, G = 1, and R
L
= 10 k.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-14205
SHEET
A
3
1.5 Operating performance characteristics - continued. 5/
Input / output characteristics - continued:
Output swing, R
L
= 2 k ........................................................................................................................ -V
S
+ 1.8 V to
+V
S
- 1.2 V
Output swing, R
L
= 2 k, T
A
= -55C to +125C .................................................................................... -V
S
+ 1.9 V to
Output short circuit current .....................................................................................................................
Input impedance (IN to ground) ............................................................................................................
Reference characteristics:
Reference input resistance ....................................................................................................................
Reference input current,
IN
= 0 V .........................................................................................................
Reference input voltage range ...............................................................................................................
+V
S
- 1.3 V
35 mA
1.5 G || 3 pF 6/
10 k
70
A
V
S
Noise characteristics:
Voltage noise RTI, peak to peak, 0.1 Hz to 10 Hz,
IN
= 0 V, G = 1000 ................................................ 100 nV
PP
Current noise spectral density: 1 kHz ..................................................................................................... 1.5 pA /
Peak to peak current noise, 0.1 Hz to 10 Hz, G = 1000 ......................................................................... 100 pA
PP
Dynamic signal response:
Small signal bandwidth -3 dB, G = 10 ....................................................................................................
Small signal bandwidth -3 dB, G = 100 ..................................................................................................
Small signal bandwidth -3 dB, G = 1000 ................................................................................................
Settling time 0.01%, 10 V step, G = 1 ....................................................................................................
Settling time 0.01%, 10 V step, G = 10 ..................................................................................................
Settling time 0.01%, 10 V step, G = 100 ................................................................................................
Settling time 0.01%, 10 V step, G = 1000 ..............................................................................................
Settling time 0.001%, 10 V step, G = 1 ..................................................................................................
Settling time 0.001%, 10 V step, G = 10 ................................................................................................
Settling time 0.001%, 10 V step, G = 100 ..............................................................................................
Settling time 0.001%, 10 V step, G = 1000 ............................................................................................
Total harmonic distortion, first five harmonics, f = 1 kHz, R
L
= 2 k, V
OUT
= 10 V
PP
, G = 1 ................
Hz
4 MHz
1.2 MHz
0.15 MHz
0.75
s
0.65
s
0.85
s
5
s
0.9
s
0.9
s
1.2
s
7
s
-130 dBc
Total harmonic distortion, first five harmonics, f = 1 kHz, R
L
= 2 k, V
OUT
= 10 V
PP
, G = 10 .............. -116 dBc
Total harmonic distortion, first five harmonics, f = 1 kHz, R
L
= 2 k, V
OUT
= 10 V
PP
, G = 100 ............ -113 dBc
Total harmonic distortion, first five harmonics, f = 1 kHz, R
L
= 2 k, V
OUT
= 10 V
PP
, G = 1000 ........... -111 dBc
Total harmonic distortion + N, f = 1 kHz, R
L
= 2 k, V
OUT
= 10 V
PP
, G = 100 ...................................... 0.0005%
1.6 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s) :
Device type 01 ........................................................................................................................................ 100 krad(Si) 7/
Maximum total dose available (dose rate
10 mrads(Si)/s) :
Device type 02 ........................................................................................................................................ 50 krad(Si) 8/
______
6/ Differential and common mode input impedance can be calculated from the pin impedance: Z
DIFF
= 2(ZPIN),
7/
Z
CM
= ZPIN/2.
Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.
Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883,
method 1019, condition A.
For device type 02, radiation end point limits for the noted parameters are guaranteed for the conditions specified in
MIL-STD-883, method 1019, condition D.
8/
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-14205
SHEET
A
4
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 -
MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at
http://quicksearch.dla.mil
or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Block diagram. The block diagram shall be as specified on figure 2.
3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-14205
SHEET
A
5
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