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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
BZA456A
Quadruple ESD transient voltage
suppressor
Product data sheet
Supersedes data of 1998 Oct 30
1999 May 25
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
FEATURES
•
ESD rating >8 kV, according to IEC1000-4-2
•
SOT457 surface mount package
•
Common anode configuration
•
Non-clamping range
−0.5
to 5.6 V
•
Maximum reverse peak power dissipation:
24 W at t
p
= 1 ms
•
Maximum clamping voltage at peak pulse current:
8 V at I
ZSM
= 3 A.
APPLICATIONS
•
Computers and peripherals
•
Audio and video equipment
•
Communication systems
•
Medical equipment.
1
2
3
MAM357
BZA456A
PINNING
PIN
1
2
3
4
5
6
cathode 1
common
cathode 2
cathode 3
common
cathode 4
DESCRIPTION
handbook, halfpage
6
5
4
1
3
4
6
2
5
DESCRIPTION
Monolithic transient voltage suppressor diode in a six lead
SOT457 (SC-74) package for 4-bit wide ESD transient
suppression at 5.6 V level.
Top view
Marking code:
Z6.
Fig.1 Simplified outline (SOT457) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
I
Z
I
F
I
FSM
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Notes
1. T
s
is the temperature at the soldering point of the anode pin.
2. DC working current limited by P
tot max
.
working current
continuous forward current
non-repetitive peak forward current
non-repetitive peak reverse current
total power dissipation
non repetitive peak reverse power
dissipation
storage temperature
junction temperature
T
s
= 60
°C;
note 1
T
s
= 60
°C
t
p
= 1 ms; square pulse
t
p
= 1 ms; square pulse; see Fig.2
T
s
= 60
°C;
see Fig.3
square pulse; t
p
= 1 ms; see Fig.4
−
−
−
−
−
−
−65
−65
note 2
100
3.75
3
720
24
+150
+150
mA
mA
A
A
mW
W
°C
°C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1999 May 25
2
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
one or more diodes loaded
BZA456A
VALUE
125
UNIT
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
Z
V
F
V
ZSM
I
R
r
dif
S
Z
C
d
working voltage
forward voltage
non-repetitive peak reverse voltage
reverse current
differential resistance
temperature coefficient of working
voltage
diode capacitance
I
Z
= 1 mA
I
F
= 200 mA
I
ZSM
= 3 A; t
p
= 1 ms
V
R
= 3 V
I
Z
= 250
µA
I
Z
= 1 mA
I
Z
= 5 mA
see Fig.5
V
R
= 0; f = 1 MHz
V
R
= 3 V; f = 1 MHz
−
−
−
−
240
140
pF
pF
5.32
−
−
−
−
−
−
5.6
−
−
−
−
−
1.2
5.88
1.3
8
2
1600
400
−
V
V
V
µA
Ω
Ω
mV/K
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1999 May 25
3
NXP Semiconductors
Product data sheet
Quadruple ESD transient voltage
suppressor
BZA456A
handbook, halfpage
10
MDA190
1000
handbook, halfpage
Ptot
(mW)
800
MDA198
600
IZSM
(A)
400
200
1
10
−1
1
tp (ms)
10
0
0
50
100
150
Ts (
o
C)
200
All diodes loaded.
Fig.2
Maximum non-repetitive peak reverse
current as a function of pulse time.
Fig.3 Power derating curve.
10
2
handbook, halfpage
MDA199
handbook, halfpage
250
Cd
MDA192
PZSM
(W)
(pF)
200
150
10
100
50
1
10
−1
1
tp (ms)
10
0
0
1
2
3
4
VR (V)
5
P
ZSM
= V
ZSM
×
I
ZSM
.
V
ZSM
is the non-repetitive peak reverse voltage at I
ZSM
.
T
j
= 25
°C;
f = 1 MHz.
Fig.4
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
1999 May 25
4
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