MCP651/1S/2/3/4/5/9
50 MHz, 200 µV Op Amps with mCal
Features:
•
•
•
•
•
•
Gain-Bandwidth Product: 50 MHz
Slew Rate: 30 V/µs
Low Input Offset: ±200 µV (maximum)
Low Input Bias Current: 6 pA (typical)
Noise: 7.5 nV/Hz, at 1 MHz
Ease-of-Use:
- Unity-Gain Stable
- Rail-to-Rail Output
- Input Range incl. Negative Rail
- No Phase Reversal
Supply Voltage Range: +2.5V to +5.5V
High Output Current: ±100 mA
Supply Current: 6.0 mA/Ch (typical)
Low-Power Mode: 5 µA/Ch
Small Packages: SOT23-5, DFN
Extended Temperature Range: -40°C to +125°C
Description:
The Microchip Technology Inc. MCP651/1S/2/3/4/5/9
family of high bandwidth and high slew rate operational
amplifiers features low offset. At power-up, these op
amps are self-calibrated using mCal. Some package
options also provide a Calibration/Chip Select pin
(CAL/CS) that supports a Low-Power mode of
operation, with offset calibration at the time normal
operation is re-started. These amplifiers are optimized
for high speed, low noise and distortion, single-supply
operation with rail-to-rail output and an input that
includes the negative rail.
This family is offered in single (MCP651 and
MCP651S), single with CAL/CS pin (MCP653), dual
(MCP652), dual with CAL/CS pins (MCP655), quad
(MCP654) and quad with CAL/CS pins (MCP659). All
devices are fully specified from -40°C to +125°C.
•
•
•
•
•
•
Typical Application Circuit
V
IN
Typical Applications:
•
•
•
•
•
•
•
Driving A/D Converters
Fast Low-side Current Sensing
Power Amplifier Control Loops
Optical Detector Amplifier
Barcode Scanners
Multi-Pole Active Filter
Consumer Audio
MCP65X
V
OUT
R
L
1 k
100 k
V
DD
/2
High Gain Amplifier (G = 101V/V)
35%
Percentage of Occurrences
30%
25%
20%
15%
10%
5%
0%
-100 -80 -60 -40 -20 0 20 40 60
Input Offset Voltage (µV)
80 100
80 Samples
T
A
= +25°C
V
DD
= 2.5V and 5.5V
Calibrated at +25°C
Design Aids:
SPICE Macro Models
FilterLab
®
Software
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
- MCP651EV-VOS
• Application Notes
•
•
•
•
High Gain-Bandwidth Op Amp Portfolio
Model Family
MCP621/1S/2/3/4/5/9
MCP631/2/3/4/5/9
MCP651/1S/2/3/4/5/9
MCP660/1/2/3/4/5/9
Channels/Package
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 3, 4
Gain-Bandwidth
20 MHz
24 MHz
50 MHz
60 MHz
V
OS
(max.)
0.2 mV
8.0 mV
0.2 mV
8.0 mV
I
Q
/Ch (typ.)
2.5 mA
2.5 mA
6.0 mA
6.0 mA
2009-2014 Microchip Technology Inc.
DS20002146D-page 1
MCP651/1S/2/3/4/5/9
Package Types
MCP651
SOIC
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
8 CAL/CS
7 V
DD
6 V
OUT
5 V
CAL
MCP651
2x3 TDFN *
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
EP
9
8 CAL/CS
7 V
DD
6 V
OUT
5 V
CAL
MCP651S
SOT-23-5
V
OUT
1
V
SS
2
4 V
IN
–
5 V
DD
MCP654
SOIC, TSSOP
V
OUTA
1
V
INA
- 2
V
INA
+ 3
V
DD
4
V
INB
+ 5
V
INB
- 6
V
OUTB
7
14 V
OUTD
13 V
IND
-
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
-
8 V
OUTC
V
IN
+ 3
MCP652
3x3 DFN *
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
EP
9
8 V
DD
7 V
OUTB
6 V
INB
–
5 V
INB
+
MCP652
SOIC
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
8 V
DD
7 V
OUTB
6 V
INB
–
5 V
INB
+
V
OUT
1
V
SS
2
MCP653
SOT-23-6
6 V
DD
5 CAL/CS
MCP659
4x4 QFN*
CAL
AD
/CS
AD
V
OUTD
7
CAL
BC
/CS
BC
V
OUTA
V
IN
+ 3
4 V
IN
–
MCP655
3x3 DFN *
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
CAL
A
/CS
A
5
EP
11
10 V
DD
9 V
OUTB
8 V
INB
–
7 V
INB
+
6 CAL
B
/CS
B
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
CAL
A
/CS
A
5
MCP655
MSOP
10 V
DD
9 V
OUTB
8 V
INB
–
7 V
INB
+
6 CAL
B
/CS
B
16 15 14 13
V
INA
- 1
V
INA
+ 2
V
DD
3
V
INB
+ 4
5
V
INB
-
6
V
OUTB
8
V
OUTC
EP
17
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
-
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
DS20002146D-page 2
2009-2014 Microchip Technology Inc.
V
IND
-
MCP651/1S/2/3/4/5/9
1.0
1.1
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
†
Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
V
DD
– V
SS
.......................................................................6.5V
Current at Input Pins ....................................................±2 mA
Analog Inputs (V
IN
+ and V
IN
–) †† . V
SS
– 1.0V to V
DD
+ 1.0V
All other Inputs and Outputs .......... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input voltage ...................................... |V
DD
– V
SS
|
Output Short Circuit Current ................................ Continuous
Current at Output and Supply Pins ..........................±150 mA
Storage Temperature ...................................-65°C to +150°C
Max. Junction Temperature ........................................ +150°C
ESD protection on all pins (HBM, MM)
1 kV, 200V
††
See
Section 4.2.2 “Input Voltage and Current Limits”.
1.2
Specifications
DC ELECTRICAL SPECIFICATIONS
TABLE 1-1:
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/3,
V
OUT
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 k to V
L
and CAL/CS = V
SS
(refer to
Figure 1-2).
Parameters
Input Offset
Input Offset Voltage
Input Offset Voltage Trim Step
Input Offset Voltage Drift
Power Supply Rejection Ratio
Input Current and Impedance
Input Bias Current
Across Temperature
Across Temperature
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common Mode Input Voltage Range
Common Mode Rejection Ratio
Open-Loop Gain
DC Open-Loop Gain (large signal)
Output
Maximum Output Voltage Swing
Sym.
V
OS
V
OSTRM
V
OS
/T
A
PSRR
I
B
I
B
I
B
I
OS
Z
CM
Z
DIFF
V
CMR
CMRR
CMRR
A
OL
A
OL
V
OL
, V
OH
V
OL
, V
OH
Min.
-200
—
—
61
—
—
—
—
—
—
V
SS
0.3
65
68
88
94
V
SS
+ 25
V
SS
+ 50
±50
±50
Typ.
—
37
±2.5
76
6
130
1700
±1
10 ||9
10
13
||2
—
81
84
114
123
—
—
±95
±100
13
Max.
+200
200
—
—
—
—
5,000
—
—
—
V
DD
1.3
—
—
—
—
V
DD
25
V
DD
50
±145
±150
Units
µV
µV
Conditions
After calibration
(Note
1)
µV/°C T
A
= -40°C to +125°C
dB
pA
pA
pA
pA
||pF
||pF
V
dB
dB
dB
dB
mV
mV
mA
mA
(Note
2)
V
DD
= 2.5V, V
CM
= -0.3 to 1.2V
V
DD
= 5.5V, V
CM
= -0.3 to 4.2V
V
DD
= 2.5V, V
OUT
= 0.3V to 2.2V
V
DD
= 5.5V, V
OUT
= 0.3V to 5.2V
V
DD
= 2.5V, G = +2,
0.5V Input Overdrive
V
DD
= 5.5V, G = +2,
0.5V Input Overdrive
V
DD
= 2.5V
(Note
3)
V
DD
= 5.5V
(Note
3)
T
A
= +85°C
T
A
= +125°C
Output Short-Circuit Current
Note 1:
2:
3:
I
SC
I
SC
Describes the offset (under the specified conditions) right after power-up, or just after the CAL/CS pin is toggled. Thus,
1/f noise effects (an apparent wander in V
OS
; see
Figure 2-35)
are not included.
See
Figure 2-6
and
Figure 2-7
for temperature effects.
The I
SC
specifications are for design guidance only; they are not tested.
2009-2014 Microchip Technology Inc.
DS20002146D-page 3
MCP651/1S/2/3/4/5/9
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/3,
V
OUT
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 k to V
L
and CAL/CS = V
SS
(refer to
Figure 1-2).
Parameters
Calibration Input
Calibration Input Voltage Range
Internal Calibration Voltage
Input Impedance
Power Supply
Supply Voltage
Quiescent Current per Amplifier
POR Input Threshold, Low
POR Input Threshold, High
Note 1:
2:
3:
Sym.
V
CALRNG
V
CAL
Z
CAL
V
DD
I
Q
V
PRL
V
PRH
Min.
V
SS
+ 0.1
0.31V
DD
—
2.5
3
1.15
—
Typ.
—
0.33V
DD
100 || 5
—
6
1.40
1.40
Max.
V
DD
– 1.4
0.35V
DD
—
5.5
9
—
1.65
Units
mV
k||pF
V
mA
V
V
I
O
= 0
Conditions
V
CAL
pin externally driven
V
CAL
pin open
Describes the offset (under the specified conditions) right after power-up, or just after the CAL/CS pin is toggled. Thus,
1/f noise effects (an apparent wander in V
OS
; see
Figure 2-35)
are not included.
See
Figure 2-6
and
Figure 2-7
for temperature effects.
The I
SC
specifications are for design guidance only; they are not tested.
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= 25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 k to V
L
, C
L
= 20 pF and CAL/CS = V
SS
(refer to
Figure 1-2).
Parameters
AC Response
Gain-Bandwidth Product
Phase Margin
Open-Loop Output Impedance
AC Distortion
Total Harmonic Distortion plus Noise
Step Response
Rise Time, 10% to 90%
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Sym.
GBWP
PM
R
OUT
THD+N
Min.
—
—
—
—
Typ.
50
65
20
0.0012
Max.
—
—
—
—
Units
MHz
°
%
G = +1
Conditions
G = +1, V
OUT
= 4V
P-P
, f = 1 kHz,
V
DD
= 5.5V, BW = 80 kHz
G = +1, V
OUT
= 100 mV
P-P
G = +1
f = 0.1 Hz to 10 Hz
f = 1 kHz
t
r
SR
E
ni
e
ni
i
ni
—
—
—
—
6
30
17
7.5
4
—
—
—
—
—
ns
V/µs
µV
P-P
fA/Hz
nV/Hz f = 1 MHz
DS20002146D-page 4
2009-2014 Microchip Technology Inc.
MCP651/1S/2/3/4/5/9
TABLE 1-3:
DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= 25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
V
DD
/2, V
L
= V
DD
/2, R
L
= 1 k to V
L
, C
L
= 20 pF and CAL/CS = V
SS
(refer to
Figure 1-1
and
Figure 1-2).
Parameters
CAL/CS Low Specifications
CAL/CS Logic Threshold, Low
CAL/CS Input Current, Low
CAL/CS High Specifications
CAL/CS Logic Threshold, High
CAL/CS Input Current, High
GND Current
Sym.
Min.
Typ.
Max.
Units
Conditions
V
IL
I
CSL
V
IH
I
CSH
I
SS
I
SS
I
SS
I
SS
V
SS
—
—
0
0.2V
DD
—
V
nA
CAL/CS = 0V
0.8V
DD
—
-3.5
-8
-5
-10
—
—
—
100
0.7
-1.8
-4
-2.5
-5
5
50
200
200
V
DD
—
—
—
—
—
—
—
—
300
V
µA
µA
µA
µA
µA
M
nA
ns
ms
CAL/CS = V
DD
G = +1 V/V, V
L
= V
SS
,
V
DD
= 2.5V to 0V step to V
OUT
= 0.1 (2.5V)
G = +1 V/V, V
L
= V
SS
,
V
DD
= 0V to 2.5V step to V
OUT
= 0.9 (2.5V)
CAL/CS = V
DD
Single, CAL/CS = V
DD
= 2.5V
Single, CAL/CS = V
DD
= 5.5V
Dual, CAL/CS = V
DD
= 2.5V
Dual, CAL/CS = V
DD
= 5.5V
CAL/CS Internal Pull-Down Resistor
Amplifier Output Leakage
POR Dynamic Specifications
V
DD
Low to Amplifier Off Time
(output goes High Z)
V
DD
High to Amplifier On Time
(including calibration)
CAL/CS Dynamic Specifications
CAL/CS Input Hysteresis
CAL/CS Setup Time
(between CAL/CS edges)
CAL/CS High to Amplifier Off Time
(output goes High Z)
CAL/CS Low to Amplifier On Time
(including calibration)
R
PD
I
O(LEAK)
t
POFF
t
PON
V
HYST
t
CSU
t
COFF
t
CON
t
CON
—
1
—
—
—
0.25
—
200
3
6
—
—
—
4
8
V
µs
ns
ms
ms
G = +1 V/V, V
L
= V
SS
(Notes
2, 3, 4)
CAL/CS = 0.8V
DD
to V
OUT
= 0.1 (V
DD
/2)
G = +1 V/V, V
L
= V
SS
,
CAL/CS = 0.8V
DD
to V
OUT
= 0.1 (V
DD
/2)
G = +1 V/V, V
L
= V
SS
, MCP651 and MCP655,
CAL/CS = 0.2V
DD
to V
OUT
= 0.9 (V
DD
/2)
G = +1 V/V, V
L
= V
SS
, MCP659,
CAL/CS = 0.2V
DD
to V
OUT
= 0.9 (V
DD
/2)
Note 1:
2:
3:
4:
The MCP652 single, MCP653 single, MCP655 dual and MCP659 quad have their CAL/CS inputs internally pulled down
to V
SS
(0V).
This time ensures that the internal logic recognizes the edge. However, for the rising edge case, if CAL/CS is raised
before the calibration is complete, the calibration will be aborted and the part will return to Low-Power mode.
For the MCP655 dual, there is an additional constraint. CAL
A
/CS
A
and CAL
B
/CS
B
can be toggled simultaneously
(within a time much smaller than t
CSU
) to make both op amps perform the same function simultaneously. If they are tog-
gled independently, then CAL
A
/CS
A
(CAL
B
/CS
B
) cannot be allowed to toggle while op amp B (op amp A) is in
Calibration mode; allow more than the maximum t
CON
time (4 ms) before the other side is toggled.
For the MCP659 quad, there is an additional constraint. CAL
AD
/
CS
AD
and CAL
BC
/
CS
BC
can be toggled simultane-
ously (within a time much smaller than t
CSU
) to make all four op amps perform the same function simultaneously, and
the maximum t
CON
time is approximately doubled (8 ms). If they are toggled independently, then CAL
AD
/
CS
AD
(CAL
BC
/
CS
BC
) cannot be allowed to toggle while op amps B and C (op amps A and D) are in Calibration mode; allow
more than the maximum t
CON
time (8 ms) before the other side is toggled.
2009-2014 Microchip Technology Inc.
DS20002146D-page 5
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