High Current Molded Power Inductor - PA4349.XXXANLT Series
Height:
13.0mm Max
Footprint:
24.0mm x 22.3mm Max
Current Rating:
up to 62.0A
Inductance Range:
1.5uH to 100uH
Shielded construction and compact design
High current, low DCR, and high efficiency
Minimized acoustic noise and minimized leakage flux
IN
AR
Y
Rated
Current
A
62.0
DC
Resistance
MAX.
mΩ
1.15
1.20
1.25
1.64
1.75
2.20
3.10
4.15
11.0
11.0
15.4
20.8
29.5
31.6
34.2
40.0
TYP.
mΩ
1.00
1.02
1.05
1.42
1.50
1.90
2.70
3.80
9.20
9.20
13.5
17.3
26.2
27.5
31.0
36.0
60.0
58.0
51.0
49.0
47.0
40.0
33.0
22.0
22.0
19.0
17.0
14.0
13.0
12.0
11.0
P821.A (09/17)
Electrical Specifications @ 25°C - Operating Temperature -55°C to +155°C
Part
Number
PA4349.152ANLT
PA4349.202ANLT
PA4349.222ANLT
PA4349.302ANLT
PA4349.332ANLT
PA4349.472ANLT
PA4349.682ANLT
PA4349.103ANLT
PA4349.223ANLT
PA4349.233ANLT
PA4349.333ANLT
PA4349.473ANLT
PA4349.683ANLT
PA4349.753ANLT
PA4349.823ANLT
PA4349.104ANLT
Inductance
100KHz, 1V
uH±20%
1.5
2.0
2.2
3.0
3.3
4.7
6.8
10.0
22.0
23.0
33.0
47.0
68.0
75.0
82.0
100
Saturation
Current
Max.
A
52.0
50.0
48.0
44.0
41.0
38.0
36.0
28.0
15.0
15.0
12.0
12.0
12.0
10.5
9.0
9.0
PR
1
EL
IM
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SMT Power Inductor
High Current Molded Power Inductor - PA4349.XXXANLT Series
Notes:
1. Actual temperature of the component during system operation (ambient plus tempera- 3. The rated current is the DC current required to raise the component temperature by
ture rise) must be within the standard operating range.
approximately 40½C. Take note that the components’ performanc varies depending on the
2. The saturation current is the current at which the initial inductance drops approxi-
system condition. It is suggested that the component be tested at the system level, to
mately 30% at the stated ambient temperature. This current is determined by placing
verify the temperature rise of the component during system operation.
the component in the specified ambient environment and applying a short duration 4. The part temperature (ambient+temp rise) should not exceed 155½C under worst case
pulse current (to eliminate self-heating effect) to the component.
operating conditions. Circuit design, PCB trace size and thickness, airflow and other cool-
ing provisions all affect the part temperature. Part temperature should be verified in the
end application.
Mechanical
A
XXXANL
D/C
C
B
IN
AR
Y
D
E
Final Layout
C
D
E
19.0±
0.3
L
24
12.6±
0.4
5.0±
0.4
Chip cavity
Blank portions
400mm or more
A
PA4349.XXXNLT
L
G
SUGGESTED PAD LAYOUT
G
12.5
H
19.6
Series
PA4349.XXXANLT
All Dimensions in mm.
23.5±
0.5
PR
K
0
W
EL
TAPE & REEL INFO
IM
A
B
22.0±
0.3
Blank portions
P
1
200mm or more
G
Direction of tape
SURFACE MOUNTING TYPE, REEL/TAPE LIST
REEL SIZE (mm)
A
PA4349.XXXANLT
Ø330
G
44.4
+2/-0
P
1
32±
0.1
TAPE SIZE (mm)
W
44±
0.3
K
0
13±
0.1
QTY
PCS/REEL
120
2
power.pulseelectronics.com
P821.A (09/17)
http://www.power.pulseelectronics.com/contact
H
SMT Power Inductor
High Current Molded Power Inductor - PA4349.XXXANLT Series
Typical Performance Curves
2.5
PA4349.152ANLT
50
3.5
PA4349.202ANLT
50
2
40
2.8
40
INDUCTANCE (uH)
INDUCTANCE (uH)
TEMP. RISE(
o
C)
1.5
30
2.1
30
1
20
1.4
20
0
IN
AR
Y
42
56
70
0
0
0.5
10
0.7
10
0
14
DC CURRENT(A)
28
0
13
DC CURRENT(A)
26
39
52
65
0
3.5
PA4349.222ANLT
50
5
PA4349.302ANLT
45
2.8
40
4
36
INDUCTANCE (uH)
INDUCTANCE (uH)
TEMP. RISE(
o
C)
2.1
30
3
27
1.4
20
2
18
0.7
IM
10
1
9
0
0
13
DC CURRENT(A)
26
39
52
65
0
0
0
11
DC CURRENT(A)
22
33
44
55
0
EL
5
PA4349.332ANLT
40
7
PA4349.472ANLT
45
PR
4
32
5.6
36
INDUCTANCE (uH)
INDUCTANCE (uH)
TEMP. RISE(
o
C)
3
24
4.2
27
2
16
2.8
18
1
8
1.4
9
0
0
11
DC CURRENT(A)
22
33
44
55
0
0
0
10
DC CURRENT(A)
20
30
40
50
0
3
power.pulseelectronics.com
P821.A (09/17)
http://www.power.pulseelectronics.com/contact
TEMP. RISE(
o
C)
TEMP. RISE(
o
C)
TEMP. RISE(
o
C)
SMT Power Inductor
High Current Molded Power Inductor - PA4349.XXXANLT Series
PR
4
power.pulseelectronics.com
EL
P821.A (09/17)
http://www.power.pulseelectronics.com/contact
IM
IN
AR
Y
SMT Power Inductor
High Current Molded Power Inductor - PA4349.XXXANLT Series
RY
IN
A
IM
EL
PR
For More Information
Pulse Worldwide
Pulse Europe
Headquarters
Pulse Electronics GmbH
15255 Innovation Drive Ste 100 Am Rottland 12
San Diego, CA 92128
58540 Meinerzhagen
U.S.A.
Germany
Pulse China Headquarters
Pulse Electronics (ShenZhen) CO., LTD
D708, Shenzhen Academy of
Aerospace Technology,
The 10th Keji South Road,
Nanshan District, Shenzhen,
P.R. China 518057
Tel: 86 755 33966678
Fax: 86 755 33966700
Pulse North China
Room 2704/2705
Super Ocean Finance Ctr.
2067 Yan An Road West
Shanghai 200336
China
Tel: 86 21 62787060
Fax: 86 2162786973
Pulse South Asia
135 Joo Seng Road
#03-02
PM Industrial Bldg.
Singapore 368363
Pulse North Asia
1F., No.111 Xiyuan Rd
Zhongli City
Taoyuan City 32057
Taiwan (R.O.C)
Tel: 858 674 8100
Fax: 858 674 8262
Tel: 49 2354 777 100
Fax: 49 2354 777 168
Tel: 65 6287 8998
Fax: 65 6280 0080
Tel: 886 3 4356768
Fax: 886 3 4356820
Performance warranty of products offered on this data sheet is limited to the parameters specified. Data is subject to change without notice. Other brand and product names mentioned herein may
4月19日，有消息称，阿里巴巴达摩院正在研发一款神经网络芯片——Ali- NPU ，主要运用于图像视频分析、机器学习等 AI 推理计算。按照设计，这款芯片性能将是目前市面上主流CPU、GPU架构 AI 芯片的10倍，而制造成本和功耗仅为一半，其性价比超过40倍。下面就随网络通信小编一起来了解一下相关内容吧。 应用上，通过此款芯片的研发将会更好的落地在图像、视频识别、云计算等商业场景中。...[详细]
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