4
1N4933G-K - 1N4937G-K
Taiwan Semiconductor
1A, 50V - 600V Glass Passivated Fast Recovery Rectifiers
FEATURES
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
●
●
●
●
●
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
VALUE
1
50 - 600
30
150
Single Die
UNIT
A
V
A
°C
DO-204AL (DO-41)
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
TV
Monitor
MECHANICAL DATA
● Case: DO-204AL (DO-41)
● Molding compound meets UL 94V-0 flammability rating
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Pure tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: As marked
● Weight: 0.33 g (approximately)
DO-204AL (DO-41)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms single
half sine-wave superimposed on rated
load per diode
Junction temperature
Storage temperature
SYMBOL
1N4933 1N4934 1N4935 1N4936 1N4937
G-K
50
35
50
G-K
100
70
100
G-K
200
140
200
1
30
- 55 to +150
- 55 to +150
G-K
400
280
400
G-K
600
420
600
1N4933G 1N4934G 1N4935G 1N4936G 1N4937G
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
T
J
T
STG
V
V
V
A
A
°C
°C
UNIT
1
Version:A1612
4
1N4933G-K - 1N4937G-K
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
LIMIT
65
UNIT
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode
(1)
(2)
CONDITIONS
I
F
= 1A,T
J
= 25°C
T
J
= 25°C
T
J
= 125°C
1 MHz, V
R
=4.0V
I
F
=0.5A , I
R
=1.0A
I
RR
=0.25A
SYMBOL
V
F
I
R
C
J
t
rr
TYP
-
-
-
10
-
MAX
1.2
5
150
-
200
UNIT
V
µA
µA
pF
ns
Reverse current @ rated V
R
per diode
Junction capacitance
Reverse recovery time
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO.
PACKING
CODE
A0
1N493xG-K
(Note 1)
R0
G
R1
B0
Note:
1. "x" defines voltage from 50V (1N4933G-K) to 600V (1N4937G-K)
*: Optional available
DO-41
DO-41
PACKING CODE
SUFFIX(*)
PACKAGE
DO-41
DO-41
PACKING
3,000 / Ammo box
(52mm taping)
5,000 / 13" Paper reel
5,000 / 13" Paper reel
(Reverse)
1,000 / Bulk packing
EXAMPLE P/N
EXAMPLE P/N
1N4933G-K A0G
PART NO.
1N4933G-K
PACKING
CODE
A0
PACKING CODE
SUFFIX
DESCRIPTION
Green compound
G
2
Version:A1612
4
1N4933G-K - 1N4937G-K
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
Fig2. Typical Junction Capacitance
AVERAGE FORWARD CURRENT (A)
1.5
100
1
CAPACITANCE (pF)
10
0.5
f=1.0MHz
Vsig=50mVp-p
0
0
25
50
75
100
125
150
175
1
1
10
REVERSE VOLTAGE (V)
100
AMBIENT TEMPERATURE(
o
C)
Fig3. Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
100
INSTANTANEOUS FORWARD CURRENT (A)
10
100
1
10
0.1
Fig4. Typical Forward Characteristics
T
J
=100°C
10
T
J
=75°C
UF1DLW
T
J
=125°C
T
J
=25°C
(A)
1
T
J
=25°C
0.01
1
Pulse width
Pulse Width=300μs
1%
0.9
0.8
Duty Cycle
1
1.1
1.4
1.6
1.8
2
0.001
0.1
0.3
0.6
0.4
0.8
0.5
1
0.6
1.2
0.7
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
1.2
FORWARD VOLTAGE (V)
3
Version:A1612
4
1N4933G-K - 1N4937G-K
Taiwan Semiconductor
Fig5. Maximum Non-repetitive Forward Surge Current
PEAK FORWARD SURGE CURRENT(A)
30
20
10
8.3ms Single Half Wave
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
Fig6. Reverse Recovery Time Characteristic And Test Circuit Diagram
4
Version:A1612
4
1N4933G-K - 1N4937G-K
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-204AL (DO-41)
DIM.
A
B
C
D
E
Unit (mm)
Min
2.00
0.71
25.40
4.20
25.40
Max
2.70
0.86
-
5.20
-
Unit (inch)
Min
0.079
0.028
1.000
0.165
1.000
Max
0.106
0.034
-
0.205
-
MARKING DIAGRAM
P/N
G
YWW
F
= Marking Code
= Green Compound
= Date Code
= Factory Code
5
Version:A1612
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