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RN2313,LF

产品描述双极晶体管 - 预偏置 BRT -0.1A -50V
产品类别半导体    分立半导体    晶体管    双极晶体管 - 预偏置   
文件大小286KB,共6页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
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RN2313,LF概述

双极晶体管 - 预偏置 BRT -0.1A -50V

RN2313,LF规格参数

参数名称属性值
厂商名称Toshiba(东芝)
产品种类双极晶体管 - 预偏置
配置Single
晶体管极性PNP
典型输入电阻器47 kOhms
安装风格SMD/SMT
封装 / 箱体SOT-323-3
直流集电极/Base Gain hfe Min120
最大工作频率200 MHz
集电极—发射极最大电压 VCEO50 V
集电极连续电流100 mA
峰值直流集电极电流100 mA
Pd-功率耗散100 mW
最大工作温度+ 150 C
系列RN2313
封装Cut Tape
封装Reel
发射极 - 基极电压 VEBO5 V
通道模式Enhancement
最大直流电集电极电流100 mA
工厂包装数量3000
单位重量6 mg

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RN2312,RN2313
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2312, RN2313
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1312, RN1313
Unit: mm
Equivalent Circuit
Absolute Maximum Ratings
(Ta = 25°C)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
−50
−50
−5
−100
100
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Translation Frequency
Collector output capacitance
Input resistor
RN2312
RN2313
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
R1
Test
Circuit
Test Condition
V
CB
=
−50V,
I
E
=0
V
EB
=
−5V,
I
C
= 0
V
CE
=
−5V,
I
C
=
−1mA
I
C
=
−5mA,
I
B
=
−0.25mA
V
CE
=
−10V,
I
C
=
−5mA
V
CB
=
−10V,
I
E
= 0, f = 1MHz
Min
120
15.4
32.9
Typ.
−0.1
200
3
22
47
Max
−100
−100
400
−0.3
6
28.6
61.1
Unit
nA
nA
V
MHz
pF
kΩ
Start of commercial production
1998-02
1
2014-03-01

 
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