Silicon Carbide Power Schottky Diode
CDBJFSC5650-G
Reverse Voltage: 650 V
Forward Current: 5 A
RoHS Device
Features
- Rated to 650V at 5 Amps
- Short recovery time.
- High speed switching possible.
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF.
0.039(1.00)
0.024(0.60)
0.154(3.90)
0.130(3.30)
0.055(1.40)
0.043(1.10)
0.539(13.70)
0.516(13.10)
0.031(0.80)
0.020(0.50)
0.100(2.55)
0.201(5.10)
0.110(2.80)
0.098(2.50)
0.264(6.70)
0.248(6.30)
0.602(15.30)
0.587(14.90)
0.404(10.25)
0.388( 9.85)
TO-220F
0.130(3.30)
0.118(3.00)
0.112(2.85)
0.100(2.55)
0.126(3.20)
0.118(3.00)
0.185(4.70)
0.173(4.40)
Circuit diagram
K(3)
0.031(0.80)
0.020(0.50)
K(1)
A(2)
Dimensions in inches and (millimeter)
Maximum Rating
(at T =25°C unless otherwise noted)
A
Parameter
Repetitive peak reverse voltage
Surge peak reverse voltage
DC blocking voltage
Typical continuous forward current
Repetitive peak forward surge current
Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Conditions
Symbol
V
RRM
V
RSM
V
DC
Value
650
650
650
5
Unit
V
V
V
A
A
A
W
Tc = 150°C
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
Tc
= 25°C
I
F
I
FRM
I
FSM
P
TOT
30
60
30.9
13.4
Tc = 110°C
Junction to case
R
θJC
T
J
T
STG
4.85
-55 ~ +175
-55 ~ +175
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
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Page 1
Comchip Technology CO., LTD.
Silicon Carbide Power Schottky Diode
Electrical Characteristics
(at T =25°C unless otherwise noted)
A
Parameter
Forward voltage
Conditions
I
F
= 5 A , T
J
= 25°C
Symbol
V
F
Typ
1.35
1.55
10
Max
1.7
Unit
V
I
F
= 5 A , T
J
= 175°C
V
R
= 650V , T
J
= 25°C
Reverse current
V
R
=
650V , T
J
= 175°C
V
R
= 400V , T
J
= 150°C
Total capacitive charge
Q
C
=
∫
VR
0
100
µA
I
R
15
C(V) dv
Q
C
23
nC
V
R
= 0V , T
J
= 25°C ,
f = 1 MH
Z
Total capacitance
V
R
= 200V , T
J
= 25°C ,
f = 1 MH
Z
V
R
= 400V , T
J
= 25°C ,
f = 1 MH
Z
C
430
44
42.5
pF
Typical Characteristics (
CDBJFSC5650-G
)
Fig.1 - Forward Characteristics
5
T
J
=25°C
Fig.2 - Reverse Characteristics
0.16
0.14
Forward Current, I
F
(A)
4
T
J
=75°C
T
J
=125°C
Reverse
Current,
I
R
(mA)
0.12
0.10
0.08
0.06
0.04
0.02
T
J
=75°C
T=125°C
J
T=175°C
J
T
J
=25°C
3
T
J
=175°C
2
1
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0
0
100
200
300
400
500
600
700
800
Forward Voltage, V
F
(V)
Reverse Voltage, V
R
(V)
Fig.3 - Current Derating
Capacitance Between Terminals, C
J
(pF)
50
500
450
400
350
300
250
200
150
100
50
Fig.4 - Capacitance vs. Reverse Voltage
Forward Current, I
F
(A)
40
10% Duty
30
30% Duty
20
50% Duty
10
70% Duty
D.C.
0
25
50
75
100
125
150
175
0
0.01
0.1
1
10
100
1000
Case Tempature, T
C
(°C)
Reverse Voltage, V
R
(V)
REV:A
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC11
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Comchip Technology CO., LTD.
Silicon Carbide Power Schottky Diode
Marking Code
Part Number
CDBJFSC5650-G
Marking Code
JFSC5650
C
JFSC5650
Standard Packaging
TUBE PACK
Case Type
TUBE
( pcs )
BOX
( pcs )
TO-220F
50
1,000
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC11
REV:A
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Comchip Technology CO., LTD.
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