BZD27B-M Series
www.vishay.com
Vishay Semiconductors
Zener Diodes with Surge Current Specification
eSMP
®
Series
FEATURES
Available
• Sillicon planar Zener diodes
• Voltage range includes 43 breakdown
voltages from 3.6 V to 200 V with ± 2 %
for BZD27B-M Series
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
• Excellent stability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Meets JESD 201 class 2 whisker test
• ESD capability according to AEC-Q101:
human body model: > 8 kV
machine model: > 800 V
• Wave and reflow solderable
• AEC-Q101 qualified available
• Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
• Base P/N-HM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified (available on request)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
2
23018
23019
SMF
(DO-219AB)
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
BR
V
WM
P
PPM
T
J
max.
V
Z
specification
Int. construction
Polarity
VALUE
3.6 to 200
5 to 100
7.35 to 196
6.2 to 160
150
175
Pulse current
Single
Uni-directional
UNIT
V
mA
V
V
W
°C
ORDERING INFORMATION
DEVICE NAME
BZD27B-M Series
ORDERING CODE
BZD27B3V6P-M3-08 to BZD27B200P-M3-08
BZD27B3V6P-M3-18 to BZD27B200P-M3-18
TAPED UNITS PER REEL
3000 per 7" reel (8mm tape)
10 000 per 13" reel (8 mm tape)
MINIMUM ORDER QUANTITY
30 000/box
50 000/box
PACKAGE
PACKAGE NAME
SMF (DO-219AB)
WEIGHT
15 mg
MOLDING COMPOUND MOISTURE SENSITIVITY WHISKER TEST
FLAMMABILITY RATING
LEVEL
ACC. JESD 201
UL 94 V-0
MSL level 1
(according J-STD-020)
Class 2
SOLDERING CONDITIONS
Peak temperature max. 260 °C
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Non repetitive peak surge power dissipation
(2)
Junction to lead
Junction to ambient air
Junction temperature
Storage temperature range
Operating temperature range
Notes
(1)
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick)
(2)
T = 25 °C prior to surge
J
Rev. 1.2, 16-Feb-18
Document Number: 85922
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Mounted on epoxy-glass PCB with
3 mm x 3 mm Cu pads ( 40 μm thick)
TEST CONDITION
T
L
= 105 °C
T
A
= 30 °C
(1)
100 μs square pulse
10/1000 μs waveform
SYMBOL
P
tot
P
tot
P
ZSM
P
RSM
R
thJL
R
thJA
T
j
T
stg
T
op
VALUE
2300
800
300
150
30
180
175
-65 to +175
-65 to +175
UNIT
mW
mW
W
W
K/W
K/W
°C
°C
°C
BZD27B-M Series
www.vishay.com
Vishay Semiconductors
ZENER VOLTAGE
RANGE
(1)
TEST
CURRENT
I
ZT1
mA
MAX.
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
39.78
43.86
47.94
52.02
57.12
63.24
69.36
76.50
83.64
92.82
102.00
112.20
122.40
132.60
153.00
163.20
183.60
204.00
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
REVERSE
CURRENT
I
R
at V
R
μA
MAX.
100
50
25
10
5
10
5
10
50
10
10
7
4
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
3
3
3
5
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
V
TYP.
4
4
4
3
3
2
2
1
1
1
2
2
4
4
5
5
6
6
6
6
7
7
8
8
21
21
24
24
25
25
25
25
30
30
60
60
80
80
110
130
150
180
200
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
MAX.
8
8
7
7
6
4
3
3
2
2
4
4
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
300
300
350
400
500
MIN.
-0.14
-0.14
-0.12
-0.1
-0.08
-0.04
-0.01
0
0
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
TEMPERATURE
COEFFICIENT
VZ
at I
ZT1
%/°C
MAX.
-0.04
-0.04
-0.02
0
0.02
0.04
0.06
0.07
0.07
0.08
0.08
0.09
0.1
0.1
0.1
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
MARKING
CODE
MIN.
BZD27B3V6P-M
BZD27B3V9P-M
BZD27B4V3P-M
BZD27B4V7P-M
BZD27B5V1P-M
BZD27B5V6P-M
BZD27B6V2P-M
BZD27B6V8P-M
BZD27B7V5P-M
BZD27B8V2P-M
BZD27B9V1P-M
BZD27B10P-M
BZD27B11P-M
BZD27B12P-M
BZD27B13P-M
BZD27B15P-M
BZD27B16P-M
BZD27B18P-M
BZD27B20P-M
BZD27B22P-M
BZD27B24P-M
BZD27B27P-M
BZD27B30P-M
BZD27B33P-M
BZD27B36P-M
BZD27B39P-M
BZD27B43P-M
BZD27B47P-M
BZD27B51P-M
BZD27B56P-M
BZD27B62P-M
BZD27B68P-M
BZD27B75P-M
BZD27B82P-M
BZD27B91P-M
BZD27B100P-M
BZD27B110P-M
BZD27B120P-M
BZD27B130P-M
BZD27B150P-M
BZD27B160P-M
BZD27B180P-M
BZD27B200P-M
0N
1N
2N
3N
4N
5N
6N
7N
8N
9N
0O
1O
2O
3O
4O
5O
6O
7O
8O
9O
0P
1P
2P
3P
4P
5P
6P
7P
8P
9P
0Q
1Q
2Q
3Q
4Q
5Q
6Q
7Q
8Q
9Q
0R
1R
2R
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.78
11.76
12.74
14.70
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
38.22
42.14
46.06
49.98
54.88
60.76
66.64
73.50
80.36
89.18
98.00
107.80
117.60
127.40
147.00
156.80
176.40
196.00
PART NUMBER
V
Z
at I
ZT1
V
NOM.
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
Notes
• Electrical characteristics when used as regulator diodes
• Maximum V
F
= 1.2 V, at I
F
= 0.2 A
(1)
Pulse test: t
5 ms
p
Rev. 1.2, 16-Feb-18
Document Number: 85922
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZD27B-M Series
www.vishay.com
Vishay Semiconductors
TEST
CURRENT
I
ZT1
mA
MAX.
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
39.78
43.86
47.94
52.02
57.12
63.24
69.36
76.50
83.64
92.82
102.00
112.20
122.40
132.60
153.00
163.20
183.60
204.00
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
REVERSE
CURRENT
I
R
at V
R
μA
MAX.
1500
1200
100
20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
V
CLAMPING
VOLTAGE
V
C
at I
RSM (1)
V
MAX.
10.9
11.8
12.9
14.2
15.2
16
17.8
20.5
21.9
24.6
27.3
30
32.3
36.3
40.4
44.4
48.4
52.5
57.9
62.8
68.2
74.8
82.9
90.9
100.2
110
122
134
145
161
174
201
214
242
268
13.3
12.2
11.3
10.1
9.6
8.8
7.9
7.2
6.6
5.9
5.3
4.8
4.4
3.9
3.6
3.2
3
2.8
2.5
2.3
2.1
1.9
1.7
1.6
1.5
1.3
1.2
1.1
1
0.9
0.81
0.73
0.67
0.6
0.54
A
MIN.
0
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
TEMPERATURE
COEFFICIENT
VZ
at I
ZT1
%/C
MAX.
0.07
0.08
0.08
0.09
0.1
0.1
0.1
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART NUMBER
MARKING
CODE
MIN.
BZD27B7V5P-M
BZD27B8V2P-M
BZD27B9V1P-M
BZD27B10P-M
BZD27B11P-M
BZD27B12P-M
BZD27B13P-M
BZD27B15P-M
BZD27B16P-M
BZD27B18P-M
BZD27B20P-M
BZD27B22P-M
BZD27B24P-M
BZD27B27P-M
BZD27B30P-M
BZD27B33P-M
BZD27B36P-M
BZD27B39P-M
BZD27B43P-M
BZD27B47P-M
BZD27B51P-M
BZD27B56P-M
BZD27B62P-M
BZD27B68P-M
BZD27B75P-M
BZD27B82P-M
BZD27B91P-M
BZD27B100P-M
BZD27B110P-M
BZD27B120P-M
BZD27B130P-M
BZD27B150P-M
BZD27B160P-M
BZD27B180P-M
BZD27B200P-M
8N
9N
0O
1O
2O
3O
4O
5O
6O
7O
8O
9O
0P
1P
2P
3P
4P
5P
6P
7P
8P
9P
0Q
1Q
2Q
3Q
4Q
5Q
6Q
7Q
8Q
9Q
0R
1R
2R
7.35
8.04
8.92
9.80
10.78
11.76
12.74
14.70
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
38.22
42.14
46.06
49.98
54.88
60.76
66.64
73.50
80.36
89.18
98.00
107.80
117.60
127.40
147.00
156.80
176.40
196.00
V
Z
at I
ZT1
V
NOM.
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
Notes
• Electrical characteristics when used as protection diodes
(1)
Non-repetitive peak reverse current in accordance with “IEC 60-1, section 8” (10/1000 μs pulse); see fig. 4
Rev. 1.2, 16-Feb-18
Document Number: 85922
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZD27B-M Series
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
10
I
RSM
(%)
Vishay Semiconductors
I
F
- Forward Current (A)
Max.
V
F
Typ.
V
F
1
100
90
t
1
= 10 µs
t
2
= 1000 µs
50
10
0.1
0.6
17411
0.8
1.0
1.2
1.4
1.6
17415
t
1
t
2
t
V
F
- Forward
Voltage
(V)
Fig. 1 -
Forward Current
vs.
Forward Voltage
Fig. 4 -
Non-Repetitive Peak Reverse Current Pulse Definition
10 000
C
D
- Typ. Junction Capacitance (pF)
B5V1P
1000
B6V8P
B12P
B18P
P
ZSM
Peak
Surge
Power (W)
14
12
10
8
6
4
2
Chart valid for T
J
= 175 °C; T
A
= 25 °C, and a duty
cycle of D = 0.5
Duty cycle D
t
p
t
p
D=
T
T
T
J
max. - T
A
P
ZSM
=
D x (R
th
- Z
th
(t
p
)) + Z
th
(t
p
)
P (R
thJL
)
Typ. P
ZSM
= f (t
p
)
100
B27P
B200P
10
0
0.5
1.0
1.5
2.0
2.5
3.0
B51P
P (R
thJA
)
0
0.001 0.01
22987
22806
V
R
- Reverse
Voltage
(V)
0.1
1
10
t
p
Pulse Width (s)
100
1000
Fig. 2 -
Typ. Diode Capacitance
vs.
Reverse Voltage
Fig. 5 -
Typical Repetitive Peak Surge Power
3.0
P
tot
- Total Power Dissipation (W)
2.5
2.0
1.5
1.0
0.5
0
22774
1000
Typ. Z
th
= f (t
p
)
Z
th
Thermal Impedance (K/W)
R
thJL
= 30K/W
100
R
thJA
3 mm x 3 mm pad
R
thJL
10
R
thJA
= 180K/W
0
25
50
75
100 125 150 175
22988
1
0.001 0.01
T
amb
- Ambient Temperature (°C)
0.1
1
10
t
p
Pulse Width (s)
100
1000
Fig. 3 -
Power Dissipation
vs.
Ambient Temperature
Fig. 6 -
Typical Thermal Impedance
vs.
Time
Rev. 1.2, 16-Feb-18
Document Number: 85922
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZD27B-M Series
www.vishay.com
PACKAGE DIMENSIONS
in millimeters (inches):
SMF (DO-219AB)
Vishay Semiconductors
0.85 (0.033)
0.35 (0.014)
0.25 (0.010)
0.1 (0.004)
5
0.1(0.003)
1.9 (0.075)
1.7 (0.067)
1.2 (0.047)
0.8 (0.031)
0 (0.000)
Detail Z
enlarged
1.08 (0.043)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
0.88 (0.035)
Foot print recommendation:
1.3 (0.051)
1.3 (0.051)
Created - Date: 15. February 2005
Rev. 3 - Date: 13. March 2007
Document no.: S8-V-3915.01-001 (4)
17247
1.4 (0.055)
2.9 (0.114)
Rev. 1.2, 16-Feb-18
Document Number: 85922
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
