SMAJ5.0(A) - SMAJ188(A)
Taiwan Semiconductor
400W, 5V - 188V Surface Mount Transient Voltage Suppressor
FEATURES
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Ideal for automated placement
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than
1.0ps from 0 V to BV min
Typical I
R
less than 1μA above 10V
Moisture sensitivity level: level 1, per J-STD-020
AEC-Q101 qualified available:
ordering code with suffix “H”
400 W peak pulse power capability with a 10 / 1000 μs
waveform(300W above 78V)
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
KEY PARAMETERS
PARAMETER
V
WM
V
BR
P
PPM
t
p
= 10/1000 μs waveform
T
J MAX
Package
Configuration
VALUE
5 - 188
6.4 - 255
400
150
UNIT
V
V
W
°C
DO-214AC (SMA)
Single die
APPLICATIONS
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Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
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Case: DO-214AC (SMA)
Molding compound meets UL 94V-0 flammability rating
Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Weight: 0.06g (approximately)
DO-214AC (SMA)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25°C, tp=1ms (Note 1)
Steady state power dissipation
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 25 A for
unidirectional only
Operating junction temperature range
Storage temperature range
Note:
1. Non-repetitive current pulse per Fig. 3 and derated above TA=25°C per Fig. 2
Devices for Bipolar Applications
1. For bidirectional use C or CA suffix for types SMAJ5.0 - Types SMAJ188
2. Electrical characteristics apply in both directions
SYMBOL
P
PK
P
D
I
FSM
V
F
T
J
T
STG
VALUE
400
1
40
3.5
-55 to +150
-55 to +150
UNIT
W
W
A
V
°C
°C
1
Version: S1901
SMAJ5.0(A) - SMAJ188(A)
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Breakdown
voltage
Part number
Marking
code
V
BR
@I
T (1)
(V)
Min.
40.0
40.0
44.4
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
209
209
Max.
48.9
44.2
54.3
49.1
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
255
231
Working
Test
current
I
T
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
stand-off
voltage
V
WM
(V)
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
188
188
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
6.2
6.9
5.6
6.2
5.2
5.8
5.0
5.5
4.7
5.2
4.4
4.9
4.2
4.6
3.9
4.3
3.7
4.1
3.5
3.9
3.2
3.5
3.0
3.3
2.9
3.2
2.0
2.2
1.9
2.1
1.7
1.9
1.6
1.7
1.4
1.6
1.3
1.5
1.1
1.3
1.0
1.2
1.0
1.1
0.9
0.9
64.3
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
266
243
287
259
304
275
344
328
Maximum reverse
leakage current
I
R
@V
WM (1)
(µA)
Maximum peak
impulse current
I
PPM
(A)
(2)
Maximum clamping
voltage
V
C
@I
PPM
(V)
(2)
SMAJ36
SMAJ36A
SMAJ40
SMAJ40A
SMAJ43
SMAJ43A
SMAJ45
SMAJ45A
SMAJ48
SMAJ48A
SMAJ51
SMAJ51A
SMAJ54
SMAJ54A
SMAJ58
SMAJ58A
SMAJ60
SMAJ60A
SMAJ64
SMAJ64A
SMAJ70
SMAJ70A
SMAJ75
SMAJ75A
SMAJ78
SMAJ78A
SMAJ85
SMAJ85A
SMAJ90
SMAJ90A
SMAJ100
SMAJ100A
SMAJ110
SMAJ110A
SMAJ120
SMAJ120A
SMAJ130
SMAJ130A
SMAJ150
SMAJ150A
SMAJ160
SMAJ160A
SMAJ170
SMAJ170A
SMAJ188
SMAJ188A
Notes:
1.
2.
3.
4.
CN
CP
CQ
CR
CS
CT
CU
CV
CW
CX
CY
CZ
RD
RE
RF
RG
RH
RK
RL
RM
RN
RP
RQ
RR
RS
RT
RU
RV
RW
RX
RY
RZ
SD
SE
SF
SG
SH
SK
SL
SM
SN
SP
SQ
SR
ST
SS
Pulse test with PW=30 ms
Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25°C per Fig. 2
Peak pulse power waveform is 10/1000µs
For bi-directional devices having V
R
of 10 V and under, the I
R
limit is double.
3
Version: S1901
SMAJ5.0(A) - SMAJ188(A)
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Peak Pulse Power Rating Curve
100
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
10
125
Fig.2 Pulse Derating Curve
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
DERATING IN PERCENTAGE (%)
P
PPM
, PEAK PULSE POWER, KW
100
75
50
1
25
0.1
0.1
1
10
100
1000
10000
0
0
25
50
75
100
125
150
175
200
tp, PULSE WIDTH, (μs)
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig.3 Clamping Power Pulse Waveform
Fig.4 Maximum Non-repetitive Forward Surge
Current
IFSM, PEAK FORWARD SURGE CURRENT (A)
50
8.3ms single half sine wave
40
140
120
PEAK PULSE CURRENT (%)
100
Peak value
I
PPM
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
Rise time tr=10μs to 100% of I
PPM
80
60
40
20
0
0
0.5
1
1.5
t, TIME (ms)
2
2.5
3
10/1000μs, waveform
td
Half value-I
PPM
/2
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
5
Version: S1901
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