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LTC1693-3CMS8#PBF

产品描述门驱动器 High Speed MOSFET Driver
产品类别模拟混合信号IC    驱动程序和接口   
文件大小286KB,共20页
制造商ADI(亚德诺半导体)
官网地址https://www.analog.com
标准
下载文档 详细参数 选型对比 全文预览

LTC1693-3CMS8#PBF概述

门驱动器 High Speed MOSFET Driver

LTC1693-3CMS8#PBF规格参数

参数名称属性值
Brand NameAnalog Devices Inc
是否无铅含铅
是否Rohs认证符合
包装说明TSSOP,
针数8
制造商包装代码05-08-1660
Reach Compliance Codecompliant
Samacsys Confidence3
Samacsys StatusReleased
Samacsys PartID1613864
Samacsys Pin Count8
Samacsys Part CategoryIntegrated Circuit
Samacsys Package CategorySmall Outline Packages
Samacsys Footprint NameMS8 Package 8-Lead Plastic MSOP -----
Samacsys Released Date2020-02-28 03:16:18
Is SamacsysN
高边驱动器YES
接口集成电路类型BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码S-PDSO-G8
JESD-609代码e3
长度3 mm
湿度敏感等级1
功能数量1
端子数量8
最高工作温度70 °C
最低工作温度
标称输出峰值电流1.5 A
封装主体材料PLASTIC/EPOXY
封装代码TSSOP
封装形状SQUARE
封装形式SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1.17 mm
最大供电电压13.2 V
最小供电电压4.5 V
标称供电电压12 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层MATTE TIN
端子形式GULL WING
端子节距0.65 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
断开时间0.075 µs
接通时间0.075 µs
宽度3 mm
Base Number Matches1

文档预览

下载PDF文档
LTC1693
High Speed Single/Dual
N-Channel MOSFET Drivers
FEATURES
s
s
DESCRIPTIO
s
s
s
s
s
s
s
Dual MOSFET Drivers in SO-8 Package
or Single MOSFET Driver in MSOP Package
1GΩ Electrical Isolation Between the Dual Drivers
Permits High/Low Side Gate Drive
1.5A Peak Output Current
16ns Rise/Fall Times at V
CC
= 12V, C
L
= 1nF
Wide V
CC
Range: 4.5V to 13.2V
CMOS Compatible Inputs with Hysteresis,
Input Thresholds are Independent of V
CC
Driver Input Can Be Driven Above V
CC
Undervoltage Lockout
Thermal Shutdown
The LTC
®
1693 family drives power N-channel MOSFETs
at high speed. The 1.5A peak output current reduces
switching losses in MOSFETs with high gate capacitance.
The LTC1693-1 contains two noninverting drivers while
the LTC1693-2 contains one noninverting and one invert-
ing driver. These dual drivers are electrically isolated and
independent. The LTC1693-3 is a single driver with an
output polarity select pin.
All MOSFET drivers offer V
CC
independent CMOS input
thresholds with 1.2V of typical hysteresis. They can level-
shift the input logic signal up or down to the rail-to-rail V
CC
drive for the external MOSFET.
The LTC1693 contains an undervoltage lockout circuit and
a thermal shutdown circuit that disable the external
N-channel MOSFET gate drive when activated.
The LTC1693-1 and LTC1693-2 come in an 8-lead SO pack-
age. The LTC1693-3 comes in an 8-lead MSOP package.
, LTC and LT are registered trademarks of Linear Technology Corporation.
APPLICATIO S
s
s
s
s
s
Power Supplies
High/Low Side Drivers
Motor/Relay Control
Line Drivers
Charge Pumps
TYPICAL APPLICATION
V
IN
48VDC
±10%
RETURN
Two Transistor Forward Converter
C2
1.5µF
63V
+
C1
330µF
63V
R1
0.068Ω
12V
C5
1µF
17
C11
0.1µF
C9
1800pF
5%
NPO
R5
2.49k
1%
1
2
4
3
5
6
7
10
C10
0.1µF
C14
3300pF
R9
12k
C12
100pF
12V
IN
BOOST
LT1339
SYNC
5V
REF
SL/ADJ
C
T
I
AVG
SS
V
C
V
REF
SGND
C15
0.1µF
8
TS
SENSE
+
SENSE
BG
PHASE
RUN/SHDN
V
FB
PGND
15
18
11
TG
20
19
BAT54
R6 100Ω
D2
MURS120
LTC1693CS8-2
8
V
CC1
IN1
2
7
GND1 OUT1
3
6
V
CC2
IN2
4
5
GND2 OUT2
1
C7
1µF
C8
1µF
Q1
MTD20NO6HD
T1
13:2
D3
MURS120
Q3
MTD20NO6HD
D4
MBRO530T1
12 R7 100Ω
16
14
13
9
R10
10k
1%
R8
301k
1%
LTC1693CS8-2
8
V
CC1
IN1
2
7
GND1 OUT1
3
6
IN2
V
CC2
4
5
GND2 OUT2
1
C13
1µF
C1: SANYO 63MV330GX
C2: WIMA SMD4036/1.5/63/20/TR
C6: KEMET T510X477M006AS (×8)
L1: GOWANDA 50-318
T1: GOWANDA 50-319
1693 TA01
U
D1
MURS120
L1
1.5µH
C3
4700pF
25V
R2
5.1Ω
Q2
Si4420
×
2
V
OUT
1.5V/15A
C4
0.1µF
R3
249Ω
1%
R4
1.24k
1%
U
U
+
Q4
Si4420
C6
470µF
6.3V
×
8
RETURN
1

LTC1693-3CMS8#PBF相似产品对比

LTC1693-3CMS8#PBF LTC1693-2CS8#TR LTC1693-3CMS8#TR
描述 门驱动器 High Speed MOSFET Driver Gate Drivers LTC1693 - High Speed Single/Dual N-Channel MOSFET Drivers Gate Drivers LTC1693 - High Speed Single/Dual N-Channel MOSFET Drivers
是否Rohs认证 符合 不符合 不符合
包装说明 TSSOP, SOP, TSSOP,
Reach Compliance Code compliant not_compliant not_compliant
高边驱动器 YES YES YES
接口集成电路类型 BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码 S-PDSO-G8 R-PDSO-G8 S-PDSO-G8
JESD-609代码 e3 e0 e0
长度 3 mm 4.9 mm 3 mm
湿度敏感等级 1 1 1
功能数量 1 1 1
端子数量 8 8 8
最高工作温度 70 °C 70 °C 70 °C
标称输出峰值电流 1.5 A 1.5 A 1.5 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSSOP SOP TSSOP
封装形状 SQUARE RECTANGULAR SQUARE
封装形式 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度) 260 235 235
认证状态 Not Qualified Not Qualified Not Qualified
座面最大高度 1.17 mm 1.75 mm 1.17 mm
最大供电电压 13.2 V 13.2 V 13.2 V
最小供电电压 4.5 V 4.5 V 4.5 V
标称供电电压 12 V 12 V 12 V
表面贴装 YES YES YES
技术 CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 MATTE TIN Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING GULL WING GULL WING
端子节距 0.65 mm 1.27 mm 0.65 mm
端子位置 DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 20 20
断开时间 0.075 µs 0.075 µs 0.075 µs
接通时间 0.075 µs 0.075 µs 0.075 µs
宽度 3 mm 3.9 mm 3 mm
厂商名称 - ADI(亚德诺半导体) ADI(亚德诺半导体)
ECCN代码 - EAR99 EAR99

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