BT151X-800C
SCR
5 September 2018
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic
package intended for use in applications requiring high bidirectional blocking voltage capability and
high thermal cycling performance.
2. Features and benefits
•
•
•
•
High bidirectional blocking voltage capability
High thermal cycling performance
Isolated mounting base package
Planar passivated for voltage ruggedness and reliability
3. Applications
•
•
•
•
•
Capacitive Discharge Ignition (CDI)
Crowbar protection
Inrush protection
Motor control
Voltage regulation
4. Quick reference data
Table 1. Quick reference data
Symbol
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak reverse
voltage
average on-state
current
RMS on-state current
half sine wave; T
h
≤ 69 °C
half sine wave; T
h
≤ 69 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 7
-
Typ
-
-
-
-
-
-
2
Max
800
7.5
12
100
120
125
15
Unit
V
A
A
A
A
°C
mA
non-repetitive peak on- half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms;
Fig. 4; Fig. 5
state current
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
Dynamic characteristics
WeEn Semiconductors
BT151X-800C
SCR
Symbol
dV
D
/dt
Parameter
rate of rise of off-state
voltage
Conditions
V
DM
= 536 V; T
j
= 125 °C; R
GK
= 100 Ω;
(V
DM
= 67% of V
DRM
); exponential
waveform;
Fig. 12
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit;
Fig. 12
Min
200
Typ
1000
Max
-
Unit
V/µs
50
130
-
V/µs
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
K
A
G
n.c.
cathode
anode
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
A
G
sym037
K
1 2 3
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
Type number
BT151X-800C
Package
Name
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
BT151X-800C
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
5 September 2018
2 / 12
WeEn Semiconductors
BT151X-800C
SCR
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
repetitive peak reverse
voltage
average on-state current half sine wave; T
h
≤ 69 °C
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak reverse gate
voltage
peak gate power
average gate power
storage temperature
junction temperature
60
I
T(RMS )
(A)
50
40
30
20
4
8
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Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
800
800
7.5
12
100
120
50
50
2
5
5
0.5
150
125
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Unit
V
V
A
A
A
A
A²s
A/µs
A
V
W
W
°C
°C
half sine wave; T
h
≤ 69 °C;
Fig. 1; Fig. 2;
Fig. 3
half sine wave; T
j(init)
= 25 °C; t
p
= 10 ms;
Fig. 4; Fig. 5
half sine wave; T
j(init)
= 25 °C; t
p
= 8.3 ms
t
p
= 10 ms; SIN
I
G
= 30 mA
I t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20 ms period
-
-40
-
16
I
T(RMS)
(A)
12
69 °C
10
0
10
-2
0
-50
10
-1
1
10
s urg e d uration (s )
0
50
100
T
h
(°C)
150
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
Fig. 2. RMS on-state current as a function of heatsink
temperature; maximum values
BT151X-800C
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
5 September 2018
3 / 12
WeEn Semiconductors
BT151X-800C
SCR
15
P
tot
(W)
10
4
conduction
angle
(degrees)
30
60
90
120
180
0
2
4
6
form
factor
a
4
2.8
2.2
1.9
1.57
α
003aaj919
57.5
T
h(max)
(°C)
80
a = 1.57
2.2
2.8
1.9
5
102.5
0
I
T(AV)
(A)
8
125
Fig. 3. Total power dissipation as a function of average on-state current; maximum values
160
I
TSM
(A)
120
003aaj924
80
I
T
I
TSM
40
t
t
p
T
j(init)
= 25 °C max
0
1
10
10
2
n (number of cycles)
10
3
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT151X-800C
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
5 September 2018
4 / 12
WeEn Semiconductors
BT151X-800C
SCR
10
3
I
TSM
(A)
(1)
003aaj929
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
BT151X-800C
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
5 September 2018
5 / 12
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