PMDT290UCE
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
Rev. 1 — 6 October 2011
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra
small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
R
DSon
Quick reference data
Parameter
drain-source on-state
resistance
drain-source on-state
resistance
drain-source voltage
gate-source voltage
drain current
drain-source voltage
gate-source voltage
drain current
V
GS
= -4.5 V; T
amb
= 25 °C
[1]
Conditions
V
GS
= 4.5 V; I
D
= 500 mA; T
j
= 25 °C
Min
-
Typ
290
Max
380
Unit
mΩ
TR1 (N-channel), Static characteristics
TR2 (P-channel), Static characteristics
R
DSon
V
GS
= -4.5 V; I
D
= -400 mA; T
j
= 25 °C
-
0.67
0.85
Ω
TR1 (N-channel)
V
DS
V
GS
I
D
V
DS
V
GS
I
D
[1]
T
j
= 25 °C
V
GS
= 4.5 V; T
amb
= 25 °C
T
j
= 25 °C
[1]
-
-8
-
-
-8
-
-
-
-
-
-
-
20
8
800
-20
8
-550
V
V
mA
V
V
mA
TR2 (P-channel)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
Nexperia
PMDT290UCE
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
S1
G1
D2
S2
G2
D1
source TR1
gate TR1
drain TR2
source TR2
gate TR2
drain TR1
1
2
3
S1
S2
G1
G2
Simplified outline
6
5
4
Graphic symbol
D1
D2
SOT666
017aaa262
3. Ordering information
Table 3.
Ordering information
Package
Name
PMDT290UCE
-
Description
plastic surface-mounted package; 6 leads
Version
SOT666
Type number
4. Marking
Table 4.
Marking codes
Marking code
AF
Type number
PMDT290UCE
5. Limiting values
Table 5.
Symbol
V
DS
V
GS
I
D
I
DM
P
tot
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
V
GS
= 4.5 V; T
amb
= 25 °C
V
GS
= 4.5 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
T
sp
= 25 °C
TR1 (N-channel), Source-drain diode
I
S
V
ESD
PMDT290UCE
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
= 25 °C
[1]
[1]
Min
-
-8
-
-
-
[2]
[1]
Max
20
8
800
500
3.2
330
390
1090
370
2000
Unit
V
V
mA
mA
A
mW
mW
mW
mA
V
TR1 (N-channel)
-
-
-
source current
electrostatic discharge voltage
T
amb
= 25 °C
HBM
[1]
-
-
©
TR1 N-channel), ESD maximum rating
[3]
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 6 October 2011
2 of 20
Nexperia
PMDT290UCE
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
Table 5.
Symbol
V
DS
V
GS
I
D
I
DM
P
tot
Limiting values
…continued
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
T
sp
= 25 °C
[2]
[1]
[1]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
= 25 °C
Min
-
-8
-
-
-
-
-
-
[1]
Max
-20
8
-550
-350
-2.2
330
390
1090
-370
2000
500
150
150
150
Unit
V
V
mA
mA
A
mW
mW
mW
mA
V
mW
°C
°C
°C
TR2 (P-channel)
TR2 (P-channel), Source-drain diode
I
S
V
ESD
Per device
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
source current
electrostatic discharge voltage
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
= 25 °C
HBM
T
amb
= 25 °C
-
-
-
-55
-55
-65
TR2 (P-channel), ESD maximum rating
[3]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
Measured between all pins.
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
−75
−25
25
75
125
T
j
(°C)
175
0
−75
−25
25
75
125
T
j
(°C)
175
Fig 1.
Normalized total power dissipation as a
function of junction temperature
Fig 2.
Normalized continuous drain current as a
function of junction temperature
©
PMDT290UCE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 6 October 2011
3 of 20
Nexperia
PMDT290UCE
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
10
I
D
(A)
1
(1)
017aaa361
Limit R
DSon
= V
DS
/I
D
10
–1
(2)
(3)
(4)
(5)
10
–2
10
–1
1
10
V
DS
(V)
10
2
I
DM
= single pulse
(1) t
p
= 1 ms
(2) t
p
= 10 ms
(3) DC; T
sp
= 25 °C
(4) t
p
= 100 ms
(5) DC; T
amb
= 25 °C; drain mounting pad 1 cm
2
Fig 3.
Safe operating area TR1 (N-channel); junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
017aaa373
–10
I
D
(A)
–1
(1)
Limit R
DSon
= V
DS
/I
D
–10
–1
(2)
(3)
(4)
(5)
–10
–2
–10
–1
–1
–10
V
DS
(V)
–10
2
I
DM
= single pulse
(1) t
p
= 1 ms
(2) t
p
= 10 ms
(3) DC; T
sp
= 25 °C
(4) t
p
= 100 ms
(5) DC; T
amb
= 25 °C; drain mounting pad 1 cm
2
Fig 4.
Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
©
PMDT290UCE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 6 October 2011
4 of 20
Nexperia
PMDT290UCE
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
thermal resistance
from junction to
ambient
in free air
[1]
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
330
280
-
Max
380
320
115
Unit
K/W
K/W
K/W
TR1 (N-channel)
R
th(j-sp)
TR2 (P-channel)
R
th(j-a)
in free air
[1]
[2]
-
-
-
330
280
-
380
320
115
K/W
K/W
K/W
R
th(j-sp)
Per device
R
th(j-a)
-
-
250
K/W
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.5
0.25
0.1
0.33
0.2
0.05
017aaa064
0
10
0.02
0.01
1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 5.
TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMDT290UCE
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 6 October 2011
5 of 20
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