SMA6S12AH – SMA6S60AH
Taiwan Semiconductor
600W, 12V – 60V Surface Mount Transient Voltage Suppressor
FEATURES
●
●
●
●
●
AEC-Q101 qualified
Glass passivated junction chip
Maximum V
BR
temperature coefficient: 0.094%/°C
Moisture sensitivity level: level 1, per J-STD-020
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
WM
V
BR
P
PPM
T
J MAX
Package
VALUE
12 – 60
13.4 – 74.1
600
175
SOD-128
UNIT
V
V
W
°C
APPLICATIONS
●
●
●
●
●
Switching mode power supply (SMPS)
Motor for BLDC
Lighting application
Battery Management System
Automotive
MECHANICAL DATA
●
●
●
●
●
●
Case: SOD-128
Molding compound meets UL 94V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: Uni-directional
Weight: 29.3mg (approximately)
SOD-128
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Non-repetitive peak impulse power dissipation with
(1)
10/1000us waveform
(2)
Steady state power dissipation at T
L
=25°C
Forward Voltage @ I
F
=25A for Uni-directional only
Junction temperature
(3)
SYMBOL
P
PPM
P
D
V
F
T
J
VALUE
600
7.14
3.5
-55 to +175
-55 to +175
UNIT
W
W
V
°C
°C
Storage temperature
T
STG
Notes:
1.
Non-repetitive current pulse per fig. 3 and derated above T
A
=25°C Per Fig. 1
2.
Units mounted on PCB (5mm x 5mm Cu pad test board)
3.
Pulse test with PW=0.3 ms
1
Version: A1805
SMA6S12AH – SMA6S60AH
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance per diode
Junction-to-ambient thermal resistance per diode
Junction-to-case thermal resistance per diode
SYMBOL
R
ӨJL
R
ӨJA
R
ӨJC
TYP.
21
62
16
UNIT
°C/W
°C/W
°C/W
Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board)
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Breakdown
Working
voltage
Test
stand-off
V
BR
@I
T
current
voltage
(V)
I
T
V
WM
(Note 1)
(mA)
(V)
Min. Max.
13.4
16.8
20.1
22.4
23.5
24.6
26.8
27.9
29.1
33.5
36.9
40.2
43.6
44.7
48.1
52.5
57.0
62.6
67.1
14.8
18.5
22.2
24.7
25.9
27.2
29.6
30.9
32.1
37.1
40.8
44.5
48.2
49.4
53.1
58.1
63.0
69.2
74.1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
12
15
18
20
21
22
24
25
26
30
33
36
39
40
43
47
51
56
60
Maximum
blocking
leakage
current
I
R
@V
WM
(µA)
(Note 1)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
peak impulse
current
I
PPM
(A)
tp =10/1000 μs
30.8
24.6
20.5
18.5
17.6
16.8
15.4
14.8
14.2
12.3
11.2
10.3
9.5
9.2
8.6
7.9
7.2
6.6
6.2
Maximum
clamping
voltage
V
C
@I
PPM
(V)
19.5
24.4
29.2
32.5
34.1
35.7
39.0
40.6
42.2
48.7
53.6
58.4
63.3
64.9
69.8
76.3
82.8
90.9
97.4
Part number
Marking
code
SMA6S12AH
SMA6S15AH
SMA6S18AH
SMA6S20AH
SMA6S21AH
SMA6S22AH
SMA6S24AH
SMA6S25AH
SMA6S26AH
SMA6S30AH
SMA6S33AH
SMA6S36AH
SMA6S39AH
SMA6S40AH
SMA6S43AH
SMA6S47AH
SMA6S51AH
SMA6S56AH
SMA6S60AH
6S012
6S015
6S018
6S020
6S021
6S022
6S024
6S025
6S026
6S030
6S033
6S036
6S039
6S040
6S043
6S047
6S051
6S056
6S060
Note:
1. Pulse test with PW=30 ms
2
Version: A1805
SMA6S12AH – SMA6S60AH
Taiwan Semiconductor
ORDERING INFORMATION
ORDERING CODE
(Note 1)
SMA6SxxAH MWG
SMA6SxxAH MXG
PACKAGE
SOD-128
SOD-128
PACKING
3,500 / 7” Plastic reel
14,000 / 13” Plastic reel
Note:
1. "xx" defines voltage from 12V (SMA6S12AH) to 60V (SMA6S60AH)
3
Version: A1805
SMA6S12AH – SMA6S60AH
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Pulse Power or Current vs. Initial Junction
Temperature
PEAK PULSE POWER (PPPM) OR CURRENT(IPP)
DERATING IN PERCENTAGE, %
Fig.2 Steady State Power Derating
100
P
D
- POWER DISSIPATION (W)
8
7
6
5
4
3
2
1
Heat sink
5mm x 5mm
Cu pad test board
0
25
50
75
100
125
150
175
75
50
25
0
0
25
50
75
100
125
150
175
0
T
J
- INITAL TEMPERATURE (°C)
LEAD TEMPERATURE (°C)
Fig.3 Clamping Power Pulse Waveform
160
IPPM, PEAK PULSE CURRENT (%)
Fig.4 Typical Junction Capacitance
10000
140
120
100
80
60
40
20
0
0
0.5
1
t
d
Peak value I
PPM
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
CAPACITANCE (pF)
SMA6S12AH
1000
SMA6S30AH
100
f=1.0MHz
Vsig=50mVp-p
Rise time tr=10μs to 100% of I
PPM
Half value-I
PPM
/2
10/1000μs waveform
SMA6S60AH
10
1.5
2
2.5
3
1
10
REVERSE VOLTAGE (V)
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig.5 Typical Transient Thermal Impedance
100
TRANSIENT THERMAL IMPEDANCE (°C/W)
10
1
0.1
0.01
0.001
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
PULSE DURATION (s)
4
Version: A1805
SMA6S12AH – SMA6S60AH
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
SOD-128
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
P/N
YW
F
Cathode band
= Marking Code
= Date Code
= Factory Code
5
Version: A1805
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