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TBAS16,LM

产品描述肖特基二极管与整流器 Switching Diode 80V 215mA
产品类别半导体    分立半导体    二极管与整流器    肖特基二极管与整流器   
文件大小196KB,共6页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
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TBAS16,LM概述

肖特基二极管与整流器 Switching Diode 80V 215mA

TBAS16,LM规格参数

参数名称属性值
厂商名称Toshiba(东芝)
产品种类肖特基二极管与整流器
技术Si
系列TBAS16
封装Cut Tape
封装Reel
工厂包装数量3000
单位重量9 mg

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TBAS16
Switching Diodes Silicon Epitaxial Planar
TBAS16
1. Applications
Ultra-High-Speed Switching
2. Packaging and Internal Circuit
1: Anode
2: N.C.
3: Cathode
SOT23
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
Peak reverse voltage
Reverse voltage
Average rectified current
Peak forward current
Non-repetitive peak forward surge current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
O
I
FM
I
FSM
P
D
T
j
T
stg
(Note 1)
(Note 2)
Note
Rating
85
80
215
500
2
320
150
-55 to 150
A
mW
mA
Unit
V
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Measured with a 10 ms pulse.
Note 2: Mounted on an FR4 board (25.4 mm
×
25.4 mm
×
1.6 mmt, Cu pad: 0.42 mm
2
×
3)
Note:
Start of commercial production
©2016 Toshiba Corporation
1
2016-05
2016-09-30
Rev.1.0

 
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