AN11006
Single stage 2.3_2.7GHz LNA with BFU730F
Rev. 4.0 — 21 June 2016
Application note
Info
Keywords
Abstract
Content
BFU730F, LNA, 2.3-2.7 GHz, WiMAX, WLAN, ISM, LTE, High linearity.
The document provides circuit, layout, BOM and performance information
on 2.3-2.7 GHz LNA equipped with NXP’s BFU730F wide band transistor.
This Application note is related to evaluation board
OM7690/BFU730F,598 12nc 934065627598
NXP Semiconductors
AN11006
2.3_2.7GHz LNA
1. Introduction
The BFU730F is a discrete HBT that is produced using NXP Semiconductors’ advanced
110 GHz f
T
SiGe:C BiCmos process. SiGe:C is a normal silicon germanium process with
the addition of Carbon in the base layer of the NPN transistor. The presence of carbon in
the base layer suppresses the boron diffusion during wafer processing. This allows
steeper and narrower SiGe HBT base and a heavier doped base. As a result, lower base
resistance, lower noise and higher cut off frequency can be achieved.
The BFU730F is one of a series of transistors made in SiGe:C.
BFU710F, BFU760 and BFU790 are the other types, BFU710 is intended for ultra low
current applications. The BFU760F and BFU790F are high current types and are
intended for application where linearity is key.
The BFU7XXF are ideal in all kind of applications where cost matters. It also gives
design flexibility.
2. Requirements and design of the 2.3-2.7GHz LNA
The BFU730 2.3-2.7GHz LNA EVB simplifies the evaluation of the BFU730 wideband
transistor, for this frequency range, in which e.g. WLAN, Bluetooth, WiMax, LTE etc
systems are present. The EVB enables testing of the device performance and requires
no additional support circuitry. The board is fully assembled with BFU730, including
input- and output matching, to optimize the performance. The input match is a
compromise between best noise figure and good Input return loss. The board is supplied
with two SMA connectors for input and output connection to RF test equipment.
Table 1.
Target spec.
Target specification of the 2.3-2.7 GHz LNA.
Vcc
3
V
Icc
10
mA
NF
<1dB
dB
Gain
>18
dB
IRL
>10
dB
ORL
>10
dB
3. Design
The 2.3_2.7 GHz LNA consists of one stage grounded emitter BFU730F amplifier. For
this amplifier 11 external components are used, for matching, biasing and decoupling.
The design has been conducted using Agilent’s Advanced Design System (ADS). The
2D EM Momentum tool has been used to co-simulate the PCB. Results are given in
paragraph
4.5.
The LNA shows a gain of 20 dB, NF of 0.8 dB, input P1dB of –16.5 dBm
and an input IP3 of 1.5 dBm
The LNA shown in this application note is unconditional stable 10 MHz-20 GHz.
AN11006
All information provided in this document is subject to legal disclaimers.
© NXP B.V.2016. All rights reserved.
Application note
Rev. 4.0 — 21 June 2016
3 of 26
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
