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24LC08BHT-I/MNY

产品描述电可擦除可编程只读存储器 8K 1K X 8 2.5V EE IND 1/2 ARRAY WP
产品类别存储    存储   
文件大小791KB,共33页
制造商Microchip(微芯科技)
官网地址https://www.microchip.com
标准
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24LC08BHT-I/MNY概述

电可擦除可编程只读存储器 8K 1K X 8 2.5V EE IND 1/2 ARRAY WP

24LC08BHT-I/MNY规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码DFN
包装说明2 X 3 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TDFN-8
针数8
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time13 weeks
最大时钟频率 (fCLK)0.4 MHz
数据保留时间-最小值200
耐久性1000000 Write/Erase Cycles
I2C控制字节1010XMMR
JESD-30 代码R-PDSO-N8
JESD-609代码e4
长度3 mm
内存密度2048 bit
内存集成电路类型EEPROM
内存宽度8
湿度敏感等级1
功能数量1
端子数量8
字数256 words
字数代码256
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织256X8
封装主体材料PLASTIC/EPOXY
封装代码HVSON
封装等效代码SOLCC8,.11,20
封装形状RECTANGULAR
封装形式SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
并行/串行SERIAL
峰值回流温度(摄氏度)260
电源3/5 V
认证状态Not Qualified
座面最大高度0.8 mm
串行总线类型I2C
最大待机电流0.000001 A
最大压摆率0.003 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)2.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式NO LEAD
端子节距0.5 mm
端子位置DUAL
处于峰值回流温度下的最长时间40
宽度2 mm
最长写入周期时间 (tWC)5 ms
写保护HARDWARE
Base Number Matches1

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24AA08H/24LC08BH
8K I
2
C
Serial EEPROM with Half-Array Write-Protect
Device Selection Table
Part
Number
24AA08H
24LC08BH
Note 1:
V
CC
Range
1.7-5.5
2.5-5.5
Max. Clock
Frequency
400 kHz
(1)
400 kHz
Temp.
Ranges
I
I, E
Description:
The Microchip Technology Inc. 24AA08H/24LC08BH
(24XX08H*) is an 8 Kbit Electrically Erasable PROM.
The device is organized as four blocks of 256 x 8-bit
memory with a 2-wire serial interface. Low-voltage
design permits operation down to 1.7V, with standby
and active currents of only 1
A
and 1 mA,
respectively. The 24XX08H also has a page write
capability for up to 16 bytes of data. The 24XX08H is
available in the standard 8-pin PDIP, surface mount
SOIC, TSSOP, 2x3 TDFN and MSOP packages, and
is also available in the 5-lead SOT-23 package. All
packages are RoHS compliant.
100 kHz for V
CC
<2.5V
Features:
• Single Supply with Operation Down to 1.7V for
24AA08H Devices, 2.5V for 24LC08BH Devices
• Low-Power CMOS Technology:
- Read current 1 mA, max.
- Standby current 1
A,
max.
• 2-Wire Serial Interface, I
2
C™ Compatible
• Schmitt Trigger Inputs for Noise Suppression
• Output Slope Control to eliminate Ground Bounce
• 100 kHz and 400 kHz Clock Compatibility
• Page Write Time 3 ms, typical
• Self-Timed Erase/Write Cycle
• 16-Byte Page Write Buffer
• Hardware Write-Protect for Half-Array (200h-3FFh)
• ESD Protection >4,000V
• More than 1 Million Erase/Write Cycles
• Data Retention >200 years
• Factory Programming available
• Packages include 8-lead PDIP, SOIC, TSSOP,
TDFN, MSOP and 5-lead SOT-23
• RoHS Compliant
• Temperature Ranges:
- Industrial (I): -40°C to +85°C
- Automotive (E): -40°C to +125°C
Block Diagram
WP
HV
Generator
I/O
Control
Logic
Memory
Control
Logic
XDEC
EEPROM
Array
Page
Latches
I/O
SCL
YDEC
SDA
V
CC
V
SS
Sense Amp.
R/W Control
Package Types
PDIP, MSOP
A0
A1
A2
V
SS
1
2
3
4
SOT-23-5
SCL
Vss
SDA
Note:
1
2
3
4
Vcc
5
WP
A0 1
A1 2
A2 3
V
SS
4
8
7
6
5
V
CC
WP
SCL
A0
A1
A2
SOIC, TSSOP
1
2
3
4
TDFN
8 V
CC
7 WP
6 SCL
5 SDA
8
7
6
5
V
CC
WP
SCL
SDA
SDA V
SS
*24XX08H is used in this document as a generic part
number for the 24AA08H/24LC08BH devices.
Pins A0, A1 and A2 are not used by the 24XX08. (No
internal connections).
2008-2013 Microchip Technology Inc.
DS20002084B-page 1

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