PTRA084808NF
Thermally-Enhanced High Power RF LDMOS FET
550 W, 48 V, 734 – 821 MHz
Description
The PTRA084808NF is a 550-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 734 to
821 MHz frequency band. Features include input matching, high
gain and thermally-enhanced package with earless flanges. Manu-
factured with Wolfspeed's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTRA084808NF
Package PG-HBSOF-6-2
Single-carrier WCDMA Drive-up
V
DD
= 48 V, I
DQ(MAIN)
= 450 mA,
V
GS(PEAK)
= 1.2 V, ƒ = 800 MHz.
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
Gain
Features
•
Broadband internal matching
•
Asymmetric design
- Main: P
1dB
= 200 W typical
- Peak: P
1dB
= 350 W typical
•
Typical pulsed CW performance (class AB), 800
MHz, 48 V, 10 μs pulse width, 10% duty cycle,
Doherty configuration
- Output power at P
3dB
= 550 W
- Efficiency = 56%
- Gain = 18.5 dB
•
Capable of handling 10:1 VSWR at 48 V, 89 W
(CW) output power
•
Integrated ESD protection
•
Human Body Model Class 1C (per ANSI/ESDA/
JEDEC JS-001)
•
Low thermal resistance
•
Pb-free and RoHS compliant
24
Peak/Average Ratio, Gain (dB)
20
16
12
8
4
0
60
40
Efficiency
0
PAR @ 0.01% CCDF
-20
-40
ptra080408nf-gr1a
-60
25
30
35
40
45
50
55
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Wolfspeed Doherty test fixture)
V
DD
= 48 V, I
DQ
= 450 mA, V
GS(PEAK)
= 1.2 V, P
OUT
= 87 W avg, ƒ = 800 MHz. 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF.
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Output PAR at 0.01% CCDF
All published data at T
CASE
= 25°C unless otherwise indicated
Efficiency (%)
20
Symbol
G
ps
Min
17.5
52.5
—
6.5
Typ
18.2
55
–30
7
Max
—
—
–27.5
—
Unit
dB
%
dBc
dB
h
D
ACPR
OPAR
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 03, 2018-06-20
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTRA084808NF
DC Characteristics
(each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
2
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 50 V, V
GS
= 0 V
V
DS
= 105 V, V
GS
= 0 V
Symbol
V(
BR)DSS
I
DSS
I
DSS
I
GSS
R
DS(on)
R
DS(on)
V
GS
V
GS
Min
105
—
—
—
—
—
3.0
—
Typ
—
—
—
—
0.08
0.05
3.5
1.2
Max
—
1
10
1
—
—
4
—
Unit
V
μA
μA
μA
W
W
V
V
Gate Leakage Current
On-State Resistance
(Main)
(Peak)
Operating Gate Voltage (Main)
(Peak)
V
GS
= 10 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 48 V, I
DQ
= 0.45 A
V
DS
= 48 V, I
DQ
= 0 mA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
Value
105
–6 to +12
0 to +55
225
–65 to +150
Unit
V
V
V
°C
°C
Thermal Characteristics
T
CASE
= 70°C, 87 W (CW), 48 V, I
DQ
= 450 mA, 800 MHz
Characteristic
Thermal Resistance
Symbol
R
q
JC
Value
0.51
Unit
°C/W
Ordering Information
Type and Version
PTRA084808NF V1 R5
Order Code
PTRA084808NF-V1-R5
Package and Description
PG-HBSOF-6-2, plastic overmold
Shipping
Tape & Reel, 500 pcs
Rev. 03, 2018-06-20
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTRA084808NF
Typical Performance
(data taken in an Wolfspeed production test fixture)
Single-carrier WCDMA Drive-up
V
DD
= 48 V, I
DQ(MAIN)
= 450 mA,
V
GS(PEAK)
= 1.2 V, ƒ = 770 MHz.
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
Gain
3
Single-carrier WCDMA Drive-up
V
DD
= 48 V, I
DQ(MAIN)
= 450 mA,
V
GS(PEAK)
= 1.2 V, ƒ = 740 MHz.
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
24
60
40
24
60
40
Peak/Average Ratio, Gain (dB)
20
16
12
8
4
0
25
Peak/Average Ratio, Gain (dB)
20
16
12
8
4
0
Gain
Efficiency
Efficiency
Efficiency (%)
0
PAR @ 0.01% CCDF
-20
-40
ptra080408nf-gr1b
0
PAR @ 0.01% CCDF
-20
-40
ptra080408nf-gr1c
-60
-60
30
35
40
45
50
55
25
30
35
40
45
50
55
Average Output Power (dBm)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V
DD
= 48 V, I
DQ(MAIN)
= 450 mA,
V
GS(PEAK)
= 1.2 V, ƒ = 800 MHz,
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
800 MHz ACPU
800 MHz ACPL
800 MHz Eff
Single-carrier WCDMA Drive-up
V
DD
= 48 V, I
DQ(MAIN)
= 450 mA,
V
GS(PEAK)
= 1.2 V, ƒ = 770 MHz.
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
770 MHz ACPU
770 MHz ACPL
770 MHz Eff
0
70
0
70
60
ACP Up, ACP Low (dBc)
ACP Up, ACP Low (dBc)
-10
-20
-30
-40
-50
-60
-70
25
30
60
-10
-20
-30
-40
-50
-60
-70
25
30
Efficiency (%)
40
30
20
10
ptra080408nf-gr2a
40
30
20
10
ptra080408nf-gr2b
0
0
35
40
45
50
55
35
40
45
50
55
Average Output Power (dBm)
Average Output Power (dBm)
Rev. 03, 2018-06-20
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Efficiency (%)
50
50
Efficiency (%)
20
20
PTRA084808NF
Typical Performance
(cont.)
Single-carrier WCDMA Drive-up
V
DD
= 48 V, I
DQ(MAIN)
= 450 mA,
V
GS(PEAK)
= 1.2 V, ƒ = 740 MHz.
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
ACP Up
ACP Low
Efficiency
4
Single-carrier WCDMA Broadband
V
DD
= 48 V, I
DQ(MAIN)
= 450 mA,
V
GS(PEAK)
= 1.2 V, P
OUT
= 49.4 dBm,
3GPP WCDMA signal, 10 dB PAR
70
60
20
Efficiency
19
55
60
0
ACP Up, ACP Low (dBc)
-10
-20
-30
-40
-50
-60
-70
25
30
Efficiency (%)
40
30
20
10
ptra080408nf-gr2c
18
50
17
Gain
16
675
725
775
825
ptra080408nf-gr3
45
0
40
35
40
45
50
55
875
Average Output Power (dBm)
Frequency (MHz)
Single-carrier WCDMA Broadband
V
DD
= 48 V, I
DQ(MAIN)
= 450 mA,
V
GS(PEAK)
= 1.2 V, P
OUT
= 49.4 dBm,
3GPP WCDMA signal, 10 dB PAR
-15
ACP Up
CW Performance
V
DD
= 48 V, I
DQ(MAIN)
= 450 mA,
V
GS(PEAK)
= 1.2 V
-10
21
20
70
60
ACP Low, ACP Up (dBc)
ACP Low
Efficiency
Return Loss (dB)
-20
IRL
-15
18
17
16
15
740 MHz Gain
770 MHz Gain
800 MHz Gain
740 MHz Eff
770 MHz Eff
800 MHz Eff
ptra080408nf-gr5
40
30
20
10
0
57
-25
-20
-30
Gain
-35
675
725
775
825
ptra080408nf-gr4
-25
-30
14
29
33
37
41
45
49
53
875
Frequency (MHz)
Output Power (dBm)
Rev. 03, 2018-06-20
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Efficiency (%)
19
50
Gain (dB)
Efficiency (%)
50
Gain (dB)
PTRA084808NF
Typical Performance
(cont.)
CW Performance at various V
DD
I
DQ(MAIN)
= 450 mA, V
GS(PEAK)
= 1.2 V,
ƒ = 800 MHz
5
CW Performance at various V
DD
I
DQ(MAIN)
= 450 mA, V
GS(PEAK)
= 1.2 V,
ƒ = 770 MHz
21
20
19
70
60
21
20
70
60
Efficiency (%)
50
40
30
44 V Gain
48 V Gain
52 V Gain
44 V Eff
48 V Eff
52 V Eff
ptra080408nf-gr6a
18
17
16
15
14
29
33
37
41
45
18
17
16
15
14
29
33
37
41
45
44 V Gain
48 V Gain
52 V Gain
44 V Eff
48 V Eff
52 V Eff
ptra080408nf-gr6b
40
30
20
10
0
20
10
0
49
53
57
49
53
57
Output Power (dBm)
Output Power (dBm)
CW Performance at various V
DD
I
DQ(MAIN)
= 450 mA, V
GS(PEAK)
= 1.2 V,
ƒ = 740 MHz
CW Performance Small Signal
V
DD
= 48 V, I
DQ(MAIN)
= 450 mA,
V
GSPEAK
= 1.2 V
70
60
22
20
Gain
-8
21
20
19
Efficiency (%)
50
40
30
44 V Gain
48 V Gain
52 V Gain
44 V Eff
48 V Eff
52 V Eff
ptra080408nf-gr6c
18
-12
-14
IRL
-16
-18
-20
ptra080408nf-gr7
18
17
16
15
14
29
33
37
41
45
16
14
12
10
8
675
725
775
825
20
10
0
49
53
57
-22
875
Output Power (dBm)
Frequency (MHz)
Rev. 03, 2018-06-20
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Input Return Loss (dB)
-10
Gain (dB)
Gain (dB)
Efficiency (%)
Gain (dB)
19
50
Gain (dB)
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