GTVA220701FA
Thermally-Enhanced High Power RF GaN on SiC HEMT
70 W, 50 V, 1805 – 2170 MHz
Description
The GTVA220701FA is a 70-watt (P
3dB
) GaN on SiC high electron
mobility transistor (HEMT) for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency, and
a thermally-enhanced package with earless flange.
GTVA220701FA
Package H-37265J-2
V
DD
= 48 V, I
DQ
= 200 mA, ƒ = 1805 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
32
80
Single-carrier WCDMA Drive-up
Features
•
GaN on SiC HEMT technology
•
Input matched
•
Typical CW performance, 1880 MHz, 48 V
- Output power at P
3dB
= 45 W
- Efficiency = 60.7%
- Gain = 21.6 dB
Efficiency (%)
Peak/Average Ratio, Gain (dB)
28
24
20
16
12
8
4
0
Efficiency
Gain
60
40
20
0
-20
•
Human Body Model, Class 1A (per ANSI/ESDA/
JEDEC JS-001)
•
Capable of handling 10:1 VSWR @48 V, 40 W (CW)
output power
•
RoHS-compliant
PAR @ 0.01% CCDF
-40
-60
g220701fa-gr1a
27
31
35
39
43
47
-80
Average Output Power (dBm)
RF Characteristics
Single-carrier LTE Specifications
(tested in Wolfspeed test fixture)
V
DD
= 48 V, I
DQ
= 200 mA, P
OUT
= 6.3 W avg, ƒ = 2170 MHz, 3GPP signal, 3.84 channel bandwidth,
peak/average = 10.6 dB @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
Min
20.75
24.5
—
Typ
22
27
–36.5
Max
—
—
–33
Unit
dB
%
dBc
h
D
ACPR
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 04, 2018-05-17
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
GTVA220701FA
DC Characteristics
Characteristic
Drain-source Breakdown Voltage
Drain-source Leakage Current
Gate Threshold Voltage
2
Conditions
V
GS
= –8 V, I
D
= 7.2 mA
V
GS
= 8 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 7.2 mA
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
Min
150
—
–3.8
Typ
—
—
–3.0
Max
—
5
–2.3
Unit
V
mA
V
Recommended Operating Conditions
Parameter
Drain Operating Voltage
Gate Quiescent Voltage
V
DS
= 48 V, I
D
= 0.2 A
Conditions
Symbol
V
DD
V
GS(Q)
Min
0
—
Typ
—
–2.8
Max
50
—
Unit
V
V
Absolute Maximum Ratings
Parameter
Drain-source Voltage
Gate-source Voltage
Gate Current
Drain Current
Junction Temperature
Storage Temperature Range
Symbol
V
DSS
V
GS
I
G
I
D
T
J
T
STG
Value
125
–10 to +2
20
13.5
225
–65 to +150
Unit
V
V
mA
A
°C
°C
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings;
exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated
within the operating voltage range (V
DD
) specified above.
Thermal Characteristics
Characteristic
Thermal Resistance
(T
CASE
= 70 °C, 55 W (CW), V
DD
= 48 V, 2170 MHz)
Symbol
R
q
JC
Value
2.36
Unit
°C/W
Ordering Information
Type and Version
GTVA220701FA V1 R0
GTVA220701FA V1 R2
Order Code
GTVA220701FA-V1-R0
GTVA220701FA-V1-R2
Package
H-37265J-2, earless flange
H-37265J-2, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Rev. 04, 2018-05-17
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
GTVA220701FA
Typical Performance
(data taken in an Wolfspeed production test fixture)
Single-carrier WCDMA Drive-up
Single-carrier WCDMA Drive-up
3
V
DD
= 48 V, I
DQ
= 200 mA, ƒ = 1880 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
32
80
32
V
DD
= 48 V, I
DQ
= 200 mA, ƒ = 2170 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
80
Peak/Average Ratio, Gain (dB)
Peak/Average Ratio, Gain (dB)
28
24
20
16
12
8
4
0
Gain
Efficiency
60
40
28
24
20
16
12
8
4
0
Efficiency
Gain
60
40
20
0
-20
20
0
-20
Efficiency (%)
PAR @ 0.01% CCDF
-40
-60
g220701fa-gr1b
PAR @ 0.01% CCDF
-40
-60
g220701fa-gr1c
27
31
35
39
43
47
-80
27
31
35
39
43
47
-80
Average Output Power (dBm)
Average Output Power (dBm)
V
DD
= 48 V, I
DQ
= 200 mA, ƒ = 1805 MHz,
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
-5
Single-carrier WCDMA Drive-up
V
DD
= 48 V, I
DQ
= 200 mA, ƒ = 1880 MHz,
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
65
55
-5
-15
-25
-35
-45
-55
-65
65
55
Single-carrier WCDMA Drive-up
ACP Up & Low (dBc)
-15
-25
-35
-45
-55
-65
Efficiency
ACP Up & Low (dBc)
Drain Efficiency (%)
45
ACP Up
ACP Low
45
35
35
25
15
g220701fa-gr2a
ACP Up
ACP Low
Efficiency
g220701fa-gr2b
25
15
5
27
31
35
39
43
47
5
27
31
35
39
43
47
Average Output Power (dBm)
Average Output Power (dBm)
Rev. 04, 2018-05-17
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Drain Efficiency (%)
Efficiency (%)
GTVA220701FA
Typical Performance
(cont.)
Single-carrier WCDMA Drive-up
Single-carrier WCDMA Broadband
Performance
4
V
DD
= 48 V, I
DQ
= 200 mA, ƒ = 2170 MHz,
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
-5
-15
65
V
DD
= 48 V, I
DQ
= 200 mA, P
OUT
= 38.0 dBm,
3GPP WCDMA signal, 10 dB PAR
28
26
Efficiency
Efficiency
28
Drain Efficiency (%)
55
45
35
ACP Up & Low (dBc)
-35
-45
-55
-65
g220701fa-gr2c
Gain (dB)
-25
ACP Up
Drain Efficiency (%)
26
24
Gain
24
22
20
18
1700
ACP Low
25
15
5
22
20
g220701fa-gr3
27
31
35
39
43
47
1800
1900
2000
2100
2200
2300
18
Average Output Power (dBm)
Frequency (MHz)
V
DD
= 48 V, I
DQ
= 200 mA, P
OUT
= 38.0 dBm,
3GPP WCDMA signal, 10 dB PAR
-15
-20
0
25
24
23
Single-carrier WCDMA Broadband
Performance
(series show frequency)
V
DD
= 48 V, I
DQ
= 200 mA
70
60
CW Performance
Return Loss
-5
ACP Up (dBc)
Return Loss (dB)
22
21
20
19
18
27
-30
-35
-40
-15
-20
1805 MHz
1880 MHz
2170 MHz
40
30
20
ACP Up
-25
g220701fa-gr4
Efficiency
g220701fa-gr5
10
43
47
51
0
-45
1700
1800
1900
2000
2100
2200
-30
2300
31
35
39
Frequency (MHz)
Output Power (dBm)
Rev. 04, 2018-05-17
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Efficiency (%)
Gain (dB)
-25
-10
Gain
50
GTVA220701FA
Typical Performance
(cont.)
CW Performance
5
at selected supply voltage
I
DQ
= 200 mA, ƒ = 1805 MHz
25
24
70
25
24
at selected supply voltage
I
DQ
= 200 mA, ƒ = 1880 MHz
Efficiency
70
60
CW Performance
Gain
60
Power Gain (dB)
Power Gain (dB)
Efficiency (%)
22
21
20
19
18
27
31
44 V
48 V
52 V
40
30
20
22
21
20
19
18
27
31
44 V
48 V
52 V
40
30
20
Efficiency
g220701fa-gr6a
10
43
47
51
0
Gain
g220701fa-gr6b
10
51
0
35
39
35
39
43
47
Output Power (dBm)
Output Power (dBm)
CW Performance
at selected supply voltage
I
DQ
= 200 mA, ƒ = 2170 MHz
Efficiency
25
24
70
60
Gain & Input Return Loss
V
DD
= 48 V, I
DQ
= 200 mA
28
26
0
Small Signal CW
Power Gain (dB)
Efficiency (%)
23
22
21
20
19
18
27
31
35
39
43
44 V
48 V
52 V
50
40
30
Power Gain (dB)
24
22
20
18
16
14
1675
1875
-8
-12
-16
-20
Gain
g220701fa-gr6c
20
10
51
0
Input Return Loss
g220701fa-gr7
-24
-28
47
2075
2275
Output Power (dBm)
Frequency (MHz)
Rev. 04, 2018-05-17
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Input Return Loss (dB)
Gain
-4
Efficiency (%)
23
50
23
50
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