PTMC210204MD
Wideband LDMOS Two-stage Integrated Power Amplifier
20 W, 28 V, 1805 – 2200 MHz
Description
The PTMC210204MD is a wideband, two-stage, LDMOS integrated
power amplifier. It incorporates internal matching for operation from
1805 MHz to 2200 MHz, and dual independent outputs with 10 W
of output power each. It is available in an 14-lead plastic overmold
package with gull wing leads.
PTMC210204MD
Package PG-HB1DSO-14-1
(formed leads)
Features
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ1
= 40 mA,
I
DQ2
= 240 mA, ƒ = 1930 MHz
3GPP WCDMA signal,
7.50 dB PAR, 3.84 MHz bandwidth
Gain
•
On-chip matching for broadband operation
•
Typical pulsed CW performance, 1990 MHz, 28 V,
combined outputs
- Output power at P
1dB
= 20.9 W
- Efficiency = 56%
- Gain = 31 dB
Efficiency (%)
•
Capable of handling 10:1 VSWR @28 V, 20.9 W
(CW) output power
•
Integrated ESD protection
•
Human Body Model Class 1A (per ANSI/ESDA/
JEDEC JS-001)
•
Integrated temperature compensation
•
Pb-free and RoHS compliant
40
60
Peak/Average Ratio, Gain (dB)
30
45
PAR @ 0.01% CCDF
20
30
Efficiency
10
15
0
c210204md-gr1a
25
30
35
40
45
0
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Wolfspeed test fixture)
V
DD
= 28 V, I
DQ1(A+B)
= 20 mA, I
DQ2(A+B)
= 120 mA, P
OUT
= 2.5 W avg, ƒ = 1990 MHz, 3GPP WCDMA signal,
channel bandwidth = 3.84 MHz, peak/average = 7.5 dB @ 0.01% CCDF
Characteristic
Linear Gain
Power Added Efficiency
Adjacent Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
PAE
ACPR
Min
28.5
17
—
Typ
30.5
19
–47
Max
33.5
—
–40
Unit
dB
%
dBc
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 04, 2018-05-19
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTMC210204MD
DC Characteristics
Stage 1
Drain Leakage Current
2
Conditions
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V
Symbol
I
DSS
I
DSS
I
GSS
R
DS(on)
V
GS1
V
GS1
Min
—
—
—
—
—
—
Typ
—
—
—
8
2.7
4.52
Max
0.1
1.0
0.1
—
—
—
Unit
µA
µA
µA
Ω
V
V
Gate Leakage Current
On-state Resistance
Operating Gate Voltage
Fixture Operating Gate Voltage
V
GS
= 1 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ1
= 20 mA
V
DS
= 28 V, I
DQ1
= 20 mA
Stage 2
Drain-source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V
Symbol
V
BR(DSS)
I
DSS
I
DSS
I
GSS
R
DS(on)
V
GS2
V
GS2
Min
65
—
—
—
—
—
—
Typ
—
—
—
—
0.9
2.72
4.74
Max
—
0.1
1.0
0.1
—
—
—
Unit
V
µA
µA
µA
Ω
V
V
Gate Leakage Current
On-state Resistance
Operating Gate Voltage
Fixture Opererating Gate Voltage
V
GS
= 1 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ2
= 120 mA
V
DS
= 28 V, I
DQ2
= 120 mA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Operating Voltage
Symbol
V
DSS
V
GS
T
J
T
STG
V
DD
Value
65
–6 to +12
225
–65 to +150
0 to 32
Unit
V
V
°C
°C
V
Thermal Characteristics
Characteristic
Thermal Resistance Stage 1
Stage 2
(T
CASE
= 70°C, 10 W CW)
(T
CASE
= 70°C, 10 W CW)
Symbol
R
q
JC
R
q
JC
Value
9.7
3.1
Unit
°C/W
°C/W
Moisture Sensitivity Level
Level
3
Test Standard
IPC/JEDEC J-STD-020
Package Temperature
260
Unit
°C
Rev. 04, 2018-05-19
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTMC210204MD
Ordering Information
Type and Version
PTMC210204MD V1 R5
3
Order Code
PTMC210204MD-V1-R5
Package and Description
PG-HB1DSO-14-1, 14-lead, overmold
Shipping
Tape & Reel, 500 pcs
Evaluation Boards
Order Code
LTN/PTMC210204MD V1
LTN/PTMC210204MD E2
LTN/PTMC210204MD E3
Frequency
1930 – 1990 MHz
1805 – 1880 MHz
2110 – 2200 MHz
Description
Class AB with combined outputs, R04360, 0.508 mm thick
Class AB with combined outputs, R04360, 0.508 mm thick
Class AB with combined outputs, R04360, 0.508 mm thick
Find Gerber files for these reference fixtures on the Wolfspeed Web site at
www.wolfspeed.com/RF
Typical RF Performance
(data taken in production test fixture)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ1
= 40 mA,
I
DQ2
= 240 mA, ƒ = 1960 MHz
3GPP WCDMA signal,
7.50 dB PAR, 3.84 MHz bandwidth
Gain
30
45
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ1
= 40 mA,
I
DQ2
= 240 mA, ƒ = 1990 MHz
3GPP WCDMA signal,
7.50 dB PAR, 3.84 MHz bandwidth
40
60
40
Peak/Average Ratio, Gain (dB)
Peak/Average Ratio, Gain (dB)
Gain
60
30
45
PAR @ 0.01% CCDF
20
30
Efficiency (%)
PAR @ 0.01% CCDF
20
30
10
Efficiency
15
10
Efficiency
15
0
c210204md-gr1b
25
30
35
40
45
0
0
c210204md-gr1c
25
30
35
40
45
0
Average Output Power (dBm)
Average Output Power (dBm)
Rev. 04, 2018-05-19
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Efficiency (%)
PTMC210204MD
Typical Performance
(cont.)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ1
= 40 mA,
I
DQ2
= 240 mA, ƒ = 1930 MHz,
3GPP WCDMA signal,
7.5 dB PAR, 3.84 MHz bandwidth
4
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ1
= 40 mA,
I
DQ2
= 240 mA, ƒ = 1960 MHz,
3GPP WCDMA signal,
7.5 dB PAR, 3.84 MHz bandwidth
-15
-25
55
45
-15
-25
-35
55
45
35
25
ACP Up & Low (dBc)
-35
35
Efficiency(%)
ACP Low
-45
-55
-65
25
30
35
40
25
ACP Low
-45
-55
-65
Efficiency
15
5
45
Efficiency
15
5
c210204md-gr2b
c210204md-gr2a
25
30
35
40
45
Average Output Power (dBm)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ1
= 40 mA,
I
DQ2
= 240 mA, ƒ = 1990 MHz,
3GPP WCDMA signal,
7.5 dB PAR, 3.84 MHz bandwith
Single-carrier WCDMA Broadband
V
DD
= 28 V, I
DQ1
= 40 mA,
I
DQ2
= 240 mA, P
OUT
= 34 dBm, 3GPP WCDMA
signal, 7.5 dB PAR, 3.84 MHz
BW
55
45
40
35
0
5
10
15
20
-15
-25
ACP Up & Low (dBc)
Efficiency(%)
-35
35
Gain (dB)
ACP Up
ACP Low
-45
-55
-65
25
30
35
40
25
30
25
20
Efficiency
c210204md-gr2c
15
5
Efficiency
15
10
1820
c210204md-gr3
25
30
2120
45
1870
1920
1970
2020
2070
Average Output Power (dBm)
Frequency (MHz)
Rev. 04, 2018-05-19
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Drain Efficiency (%)
Gain
Efficiency(%)
ACP Up
ACP Up & Low (dBc)
ACP Up
PTMC210204MD
Typical Performance
(cont.)
Single-carrier WCDMA Broadband
V
DD
= 28 V, I
DQ1
= 40 mA,
I
DQ2
= 240 mA, P
OUT
= 34 dBm,
3GPP WCDMA signal, 7.5 dB PAR
-35
-10
40
5
CW Performance
V
DD
= 28 V, I
DQ1
= 40 mA, I
DQ2
= 240 mA
60
Return Loss (dB)
-40
Input Return Loss
-20
Gain
30
45
-45
-30
20
30
-50
ACP Up
-40
10
Efficiency
1930 MHz
1960 MHz
1990 MHz
c210204md-gr5
15
-55
1820
c210204md-gr4
1870
1920
1970
2020
2070
-50
2120
0
25
30
35
40
0
45
Frequency (MHz)
Output Power (dBm)
Small Signal CW
V
DD
= 28 V, I
DQ1
= 40 mA, I
DQ2
= 240 mA
35
-10
30
Gain
-20
25
Input Return Loss
-30
20
1850
c210204md-gr7
1900
1950
2000
2050
-40
2100
Frequency (MHz)
Rev. 04, 2018-05-19
Input Return Loss (dB)
Power Gain (dB)
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Efficiency (%)
ACP (dBc)
Gain (dB)
MicroPython开源版块
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
