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MAX20307EWL+

产品描述门驱动器 High Freq Optimized Config eGaN Driver
产品类别模拟混合信号IC    驱动程序和接口   
文件大小340KB,共12页
制造商Maxim(美信半导体)
官网地址https://www.maximintegrated.com/en.html
标准
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MAX20307EWL+概述

门驱动器 High Freq Optimized Config eGaN Driver

MAX20307EWL+规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Maxim(美信半导体)
Reach Compliance Codecompliant
Samacsys DescriptionGate Drivers High Freq Optimized Config eGaN Driver
接口集成电路类型INTERFACE CIRCUIT
峰值回流温度(摄氏度)NOT SPECIFIED
处于峰值回流温度下的最长时间NOT SPECIFIED

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MAX20307
High-Frequency Optimized
Configurable eGaN Driver
General Description
The MAX20307 is a configurable driver IC for enhancement
mode Gallium Nitride (eGaN) FETs, optimized for high-
frequency operation. The device is designed to drive both
the high-side and low-side FETs in a half-bridge topology. The
floating high-side driver is capable of driving a high-side
eGaN FET operating up to 60V. A synchronous bootstrap
technique provides the high-side bias voltage and is
internally clamped at 5.2V. This clamping prevents the
gate voltage from exceeding the maximum rated gate-
source voltage of eGaN FETs.
The gate driver input signal is 3.3V TTL logic compatible,
and can withstand input voltages up to 6V regardless of
the V
CC
voltage. Additionally, the MAX20307 features
adaptive dead time control.
High-frequency H-bridge drive capability and adaptive
dead time control make the MAX20307 ideal for high-
efficiency buck applications. TTL logic compatibility allows
the INH drive input to operate directly from the outputs of
most PWM controllers allowing for flexible design.
The device covers wireless power (transmitting) levels
from a few Watts to over 20 Watts making it well suited
for wireless charging of various portable devices. High
frequency optimization enables the use of wireless charg-
ing standards such as A4WP (6.78MHz) and ISM band
(13.56MHz) wireless charging.
The MAX20307 is available in a space-saving, 15-bump,
1.2 x 2.0mm wafer-level package (WLP) and operate over
the -40°C to +85°C extended temperature range.
Benefits and Features
Flexible/Configurable Gate Drive
• Single Control Input
• 1A/5A Gate Source/Sink Current
High-Efficiency SMPS Design
• Low Loss Gate Drive: Optimized Bootstrap Circuit
• Automatic Dead Time Control Optimized for Half-
Bridge Converters
• Programmable Maximum Dead Time
• 0ns–9ns GPIO Controlled
• Fast Propagation Delay (22ns)
Safe Gate Drive
• High-Side Floating Node Voltage up to 60V
• Gate Supply Voltage UVLO
Space-Saving Design
• 0.4mm pitch 1.2mm x 2.0mm WLP
Ordering Information
appears at end of data sheet.
Applications
Switching Power Supply Topology Support
• Half and Full-Bridge converters
• Current Fed Push-Pull converters
• Synchronous Buck converters
A4WP Wireless Charging
Medical Device Wireless Charging in ISM Band
WPC and PMAT
19-100281; Rev 0; 3/18

 
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