PTFC261402FC
Thermally-Enhanced High Power RF LDMOS FET
140 W, 28 V, 2620 – 2690 MHz
Description
The PTFC261402FC is a 140-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 2620
to 2690 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flange. Manufactured with Wolfspeed's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTFC261402FC
Package H-37248-4
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 900 mA, ƒ = 2620 MHz
3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
24
Features
•
•
•
60
40
Broadband internal matching
Wide video bandwidth
Typical pulsed CW performance, 2655 MHz, 28 V
(combined outputs)
- Output power at P
1dB
= 140 W
- Efficiency = 50%
- Gain = 16.5 dB
Typical single-carrier WCDMA performance, 2655
MHz, 28 V
- Output power = 46 dBm avg
- Gain = 17.5 dB
- Efficiency = 30.5%
Capable of handling 10:1 VSWR @ 28 V, 140 W
(CW) output power
Integrated ESD protection
Human Body Model Class 1C (per ANSI/ESDA/
JEDEC JS-001)
Low thermal resistance
Pb-free and RoHS compliant
Peak/Average (dB), Gain (dB)
Efficiency
Gain
20
16
12
8
4
0
33
Efficiency (%)
20
0
-20
-40
c261402fc_gr1
•
PAR @ 0.01% CCDF
•
•
•
•
•
-60
38
43
48
53
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(combined outputs, tested in Wolfspeed production test fixture)
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 28 W avg, ƒ = 2655 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
Min
17
23.5
—
Typ
18
25
–34
Max
—
—
–31
Unit
dB
%
dBc
D
ACPR
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 06, 2018-07-03
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFC261402FC
DC Characteristics
(each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
I
GSS
R
DS(on)
V
GS
Min
65
—
—
—
—
—
Typ
—
—
—
—
0.1
2.5
Max
—
1
10
1
—
—
Unit
V
µA
µA
µA
Gate Leakage Current
On-State Resistance
Operating Gate Voltage
V
GS
= 10 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 900 mA
V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 140 W CW)
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
R
JC
Value
65
–6 to +10
0 to +32
225
–65 to +150
0.30
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFC261402FC V1 R0
PTFC261402FC V1 R250
Order Code
PTFC261402FC-V1-R0
PTFC261402FC-V1-R250
Package and Description
Thermally-enhanced earless flange, push-pull
Thermally-enhanced earless flange, push-pull
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Pinout Diagram
S
D1
D2
Pin Description
D1, D2
Drain
G1, G2
Gate
S
Source (flange)
H-37248-4_pd_10-10-2012
G1
G2
Lead connections for PTFC261402FC
Rev. 06, 2018-07-03
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFC261402FC
Typical Performance
(data taken in a production test fixture)
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 900 mA, ƒ = 2655 MHz
3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
24
3
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 900 mA, ƒ = 2690 MHz
3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
60
40
Peak/Average (dB), Gain (dB)
20
16
12
8
4
0
33
Gain
Peak/Average (dB), Gain (dB)
Efficiency
24
20
16
12
Efficiency
Gain
60
40
20
0
Efficiency (%)
20
0
-20
-40
c261402fc_g r2
PAR @ 0.01% CCDF
PAR @ 0.01% CCDF
8
4
0
33
38
43
48
c261402fc_gr3
-20
-40
-60
-60
38
43
48
53
53
Average Output Power (dBm)
Average Output Power (dBm)
Single-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 900 mA,
3GPP WCDMA signal, 7.5 dB PAR,
3.84 MHz BW
-10
-20
2620 MHz
2655 MHz
2690 MHz
50
40
30
20
Efficiency
ACP Up
ACP Low
c261402fc_gr5
Single-carrier WCDMA
Broadband Performance
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 50 dBm,
3GPP WCDMA signal, 7.5 dB PAR
19
18
49
Drain Efficiency (%)
48
47
Efficiency
Gain
Drain Efficiency(%)
ACPR (dB)
Gain (dB)
-30
-40
-50
-60
33
38
43
48
17
16
15
14
13
2570
c261402fc_gr8
46
45
44
2610
2650
2690
2730
10
0
43
53
Average Output Power (dBm)
Frequency (MHz)
Rev. 06, 2018-07-03
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Efficiency (%)
PTFC261402FC
Typical Performance
(cont.)
Single-carrier WCDMA
Broadband Performance
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 49 dBm,
3GPP WCDMA signal, 7.5 dB PAR
-5
19
18
Single-carrier WCDMA
Broadband Performance
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 50 dBm,
3GPP WCDMA signal, 7.5 dB PAR
-5
47
Gain
Return Loss
-10
-10
46
45
44
43
c261402f c_gr10
Return Loss (dB)
ACP Up (dBc)
-20
-25
-30
2570
-20
Gain (dB)
-15
-15
17
16
15
14
2570
ACP Up
-25
-30
2730
Efficiency
2610
2650
2690
2730
c 261402f c_gr9
2610
2650
2690
42
Frequency (MHz)
Frequency (MHz)
Single-carrier WCDMA
Broadband Performance
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 49 dBm,
3GPP WCDMA signal, 7.5 dB PAR
-5
-10
-5
-10
Single-carrier WCDMA
Broadband Performance
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 48 dBm,
3GPP WCDMA signal, 7.5 dB PAR
19
18
47
45
43
41
Efficiency
c261402f c_gr12
ACP Up (dBc)
-20
-25
-30
2570
-20
Gain (dB)
-15
-15
17
16
15
14
2570
ACP Up
c261402f c_gr11
-25
-30
2730
39
37
2610
2650
2690
2610
2650
2690
2730
Frequency (MHz)
Frequency (MHz)
Rev. 06, 2018-07-03
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Efficiency (%)
Return Loss
Return Loss (dB)
Gain
Efficiency (%)
PTFC261402FC
Typical Performance
(cont.)
Single-carrier WCDMA
Broadband Performance
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 48 dBm,
3GPP WCDMA signal, 7.5 dB PAR
-5
-10
-5
-10
5
CW Performance
V
DD
= 28 V, I
DQ
= 900 mA
Return Loss
20
19
60
Gain
50
Return Loss (dB)
ACP Up (dBc)
Gain (dB)
-15
-20
-25
-15
-20
18
17
30
Efficiency
16
15
2620 MHz
2655 MHz
2690 MHz
c261402f c_gr14
20
10
0
ACP Up
-25
-30
2730
-30
2570
c261402fc_gr13
2610
2650
2690
33 35 37 39 41 43 45 47 49 51 53
Frequency (MHz)
Output Power (dBm)
CW Performance
at selected V
DD
, (single side)
I
DQ
= 900 mA, ƒ = 2620 MHz
20
19
V
DD
= 32 V
V
DD
= 28 V
V
DD
= 24 V
55
45
CW Performance
at selected V
DD
, (single side)
I
DQ
= 900 mA, ƒ = 2655 MHz
20
19
V
DD
= 32 V
V
DD
= 28 V
V
DD
= 24 V
60
50
Gain
Efficiency (%)
40
Efficiency (%)
Gain (dB)
Gain (dB)
18
35
18
30
17
16
15
34
36
38
40
42
44
46
48
50
Gain
17
16
15
34
36
38
40
42
44
46
48
50
25
15
5
Efficiency
20
10
c261402f c_gr16
Efficiency
c261402f c_gr15
0
52
52
Output Power (dBm)
Output Power (dBm)
Rev. 06, 2018-07-03
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Efficiency (%)
40
stm32/stm8
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