SMA4FxxA
Datasheet
400 W TVS
Features
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Peak pulse power: 400 W (10/1000 μs) and 2.5 kW (8/20 μs)
Stand-off voltage range from 5 V to 188 V
Unidirectional type
Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C
Operating T
j
max: 175 °C
High power capability at T
j
max.: up to 200 W (10/1000 µs)
Lead finishing: matte tin plating
Complies with the following standards
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•
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UL94, V0
J-STD-020 MSL level 1
J-STD-002, JESD 22-B102 E3 and MIL-STD-750, method 2026
JESD-201 class 2 whisker test
IPC7531 footprint and JEDEC registered package outline
IEC 61000-4-2, C = 150 pF - R = 330 Ω exceeds level 4:
–
25 kV (contact discharge)
–
30 kV (air discharge)
Description
Product status link
SMA4F5.0A, SMA4F6.0A,
SMA4F6.5A, SMA4F8.5A,
SMA4F10A, SMA4F11A,
SMA4F12A, SMA4F13A,
SMA4F14A, SMA4F15A,
SMA4F16A, SMA4F18A,
SMA4F20A, SMA4F22A,
SMA4F23A, SMA4F24A,
SMA4F26A, SMA4F28A,
SMA4F30A, SMA4F31A,
SMA4F33A, SMA4F36A,
SMA4F40A, SMA4F48A,
SMA4F58A, SMA4F70A,
SMA4F85A, SMA4F100A,
SMA4F130A, SMA4F154A,
SMA4F170A, SMA4F188A
The SMA4F Transil series are designed to protect sensitive circuits against transient
surges.
The planar technology makes it compatible with high-end circuits where low leakage
current and high junction temperature are required to provide long term reliability and
stability.
SMA4F
DS12542
-
Rev 1
-
May 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
SMA4FxxA
Characteristics
1
Characteristics
Table 1.
Absolute maximum ratings (T
amb
= 25 °C)
Symbol
Parameter
IEC 61000-4-2 (C = 150 pF, R = 330 Ω)
V
PP
Peak pulse voltage
Contact discharge
Air discharge
P
PP
T
stg
T
j
T
L
Peak pulse power dissipation
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s
10/1000 µs, T
j
initial = T
amb
25
30
400
-65 to +175
-55 to +175
260
W
°C
°C
°C
kV
Value
Unit
Figure 1.
Electrical characteristics - parameter definitions
Unidirectional device
V
RM
I
RM
V
BR
V
CL
I
PP
V
F
αT
R
D
Stand-off voltage
Leakage current @ V
RM
Breakdown voltage
Clamping voltage
Peak pulse current
Forward voltage drop
Voltage temperature coefficient
Dynamic resistance
I
PP
I
R
I
RM
V
V
F
V
RM
V
BR
V
CL
I
I
F
I
V
Figure 2.
Pulse definition for electrical characteristics
DS12542
-
Rev 1
page 2/13
SMA4FxxA
Characteristics
Table 2.
Electrical characteristics - parameter values (T
amb
= 25 °C, unless otherwise specified)
I
RM
max at V
RM
Type
25 °C
µA
SMA4F5.0A
SMA4F6.0A
SMA4F6.5A
SMA4F8.5A
SMA4F10A
SMA4F11A
SMA4F12A
SMA4F13A
SMA4F14A
SMA4F15A
SMA4F16A
SMA4F18A
SMA4F20A
SMA4F22A
SMA4F23A
SMA4F24A
SMA4F26A
SMA4F28A
SMA4F30A
SMA4F31A
SMA4F33A
SMA4F36A
SMA4F40A
SMA4F48A
SMA4F58A
SMA4F70A
SMA4F85A
SMA4F100A
SMA4F130A
SMA4F154A
SMA4F170A
SMA4F188A
20
20
20
20
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
50
50
50
50
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
85 °C
V
5.0
6.0
6.5
8.5
10
11
12
13
14
15
16
18
20
22
23
24
26
28
30
31
33
36
40
48
58
70
85
100
130
154
170
188
6.4
6.7
7.2
9.4
11.1
12.3
13.3
14.4
15.7
16.7
17.9
20
22.2
24.4
25.7
26.7
28.9
31.1
33.2
34.2
36.7
40
44.4
53.2
64.6
77.9
95
111
144
171
190
209
Min.
V
BR
at I
R
Typ.
V
6.74
7.05
7.58
9.9
11.7
13
14
15.2
16.5
17.6
18.8
21.1
23.4
25.7
27
28.1
30.4
32.7
35
36
38.6
42.1
46.7
56
68
82
100
117
152
180
200
220
7.1
7.4
8
10.4
12.3
13.7
14.7
16
17.3
18.5
19.8
22.2
24.6
27
28.4
29.5
31.9
34.3
36.8
37.8
40.5
44.2
49
58.8
71.4
86.1
105
123
160
189
210
231
Max.
mA
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
10 / 1000 µs
V
CL
(3)
Max.
V
9.2
10.3
11.2
14.4
17
18
19.9
21.5
23.1
24.4
26
29.2
32.4
35.5
37.8
38.9
42.1
45.4
48.4
50.2
53.3
58.1
64.5
77.4
93.6
113
137
162
209
246
275
328
A
43.5
38.8
35.7
27.7
23.5
21.8
20.1
18.6
17.2
16.4
15.4
13.7
12.3
11.2
10.6
10.3
9.5
8.8
8.3
8
7.5
6.9
6.2
5.2
4.3
3.5
2.9
2.5
1.9
1.6
1.4
1.4
I
PP
R
D
Max.
Ω
0.048
0.075
0.09
0.144
0.2
0.216
0.259
0.296
0.337
0.36
0.403
0.511
0.634
0.759
0.888
0.913
1.07
1.26
1.39
1.56
1.71
2.01
2.5
3.56
5.21
7.71
11.4
15.6
25.8
35.6
47
69.3
V
CL
(3)
Max.
V
13.4
13.7
14.5
19.5
21.7
24.2
25.3
27.2
29
32.5
34.7
39.3
42.8
48.3
49.2
50
53.5
59
64.3
65
69.7
76
84
100
121
146
178
212
265
317
353
388
A
174
170
160
124
106
96
91
85
79
71
67
59
54
48
47
46
43
39
36
35
33
30
27
23
19
16
13
11
9
7
6.5
6
8 / 20 µs
I
PP
R
D
Max.
Ω
0.036
0.037
0.041
0.073
0.089
0.11
0.116
0.132
0.148
0.197
0.222
0.29
0.337
0.444
0.444
0.446
0.502
0.633
0.761
0.77
0.885
1.06
1.3
1.79
2.62
3.75
5.69
8.09
11.7
18.3
22.2
26.2
Max.
10
-4
/°C
5.7
5.9
6.1
7.3
7.8
8.1
8.3
8.4
8.6
8.8
9.0
9.2
9.4
9.6
9.6
9.6
9.7
9.8
9.9
9.9
10
10
10.1
10.3
10.4
10.5
10.6
10.7
10.8
10.8
10.8
10.8
αT
(1)(2)
1. To calculate V
BR
versus T
j
: V
BR
at T
J
= V
BR
at 25 °C x (1 + αT x (T
j
- 25))
2. To calculate V
CL
versus T
j
: V
CL
at T
J
= V
CL
at 25 °C x (1 + αT x (T
j
- 25))
3. To calculate V
CLmax
versus I
PPappli
: V
CLmax
= V
BR max
+ R
D
x I
PPappli
DS12542
-
Rev 1
page 3/13
SMA4FxxA
Characteristics (curves)
1.1
Characteristics (curves)
Figure 4.
Maximum peak pulse power versus exponential
pulse duration
10000
10/1000 µs
Figure 3.
Maximum peak power dissipation versus initial
junction temperature
500
P
pp
(W)
P
pp
(W)
T
j
initial = 25 °C
400
1000
300
V
RM
< 100V
200
V
RM
≥
100V
100
100
0
T
j
(°C)
0
25
50
75
100
125
150
175
200
10
0.01
t
p
(ms)
0.1
1
10
Figure 5.
Maximum clamping voltage versus peak pulse
current
1000
Figure 6.
Dynamic resistance versus pulse duration
1000
I
pp
(A)
8/20 µs
10/1000 µs
R
D
(Ω)
100
SMA4F188A
100
10
10
1
SMA4F70A
SMA4F33A
SMA4F5.0A
SMA4F188A
SMA4F70A
SMA4F33A
1
0.1
SMA4F5.0A
0.1
V
CL
(V)
1
10
100
1000
0.01
0.01
t
p
(ms)
0.1
1
10
DS12542
-
Rev 1
page 4/13
SMA4FxxA
Characteristics (curves)
Figure 7.
Junction capacitance versus reverse applied
voltage
10
Figure 8.
Leakage current versus junction temperature
I (nA)
10000 R
C (nF)
f = 1 MHz
V
osc
= 30mV
RMS
T
j
= 25 °C
V
R
= V
RM
V
RM
< 10V
1000
1
SMA4F5.0A
100
V
RM
≥ 10V
0.1
SMA4F33A
SMA4F70A
SMA4F188A
10
0.01
VR (V)
1
10
100
1000
1
T
j
(°C)
25
50
75
100
125
150
175
Figure 9.
Peak forward voltage drop versus peak forward
current
100
Figure 10.
Thermal impedance junction to ambient versus
pulse duration
1000
I
F
(A)
single pulse
Z
th(j-a)
(°C/W)
Single pulse on recommended footprint.
Epoxy printed circuit board FR4, 35 µm Cu thickness
10
T
j
= 175 °C
100
T
j
= 25 °C
1
10
V
F
(V)
0
0
0.5
1
1.5
2
2.5
3
3.5
1
0.01
0.1
1
10
100
t
p
(s)
1000
Figure 11.
Thermal resistance junction to ambient versus copper area under each lead
200
R
th(j-a)
(°C/W)
Single pulse on recommended footprint.
Epoxy printed circuit board FR4, 35 µm Cu thickness
150
100
50
0
S
Cu
(cm²)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
DS12542
-
Rev 1
page 5/13
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