BYC100W-1200P
Hyperfast power diode
Rev.01 - 10 January 2018
Product data sheet
1. General description
EEPP
TM
- Efficiency Enhanced Pt Planar rectifier in a 2-lead TO247 plastic package.
2. Features and benefits
•
•
•
•
•
•
•
•
Fast switching
Reduces switching losses with improved lower reverse recovery charge
Soft recovery characteristics
Low thermal resistance
Low leakage current
Planar termination structure
High operating temperature capability (T
j (max)
= 175°C)
Higher I
FSM
capability
3. Applications
•
•
•
Switched-Mode Power Supplies
Power factor correction diode
Uninterrupted Power Supply
4. Quick reference data
Table 1. Quick reference data
Symbol
V
RRM
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse
voltage
average forward current δ = 0.5 ; square-wave pulse; T
mb
≤ 78 °C;
Fig. 1; Fig. 2; Fig. 3
repetitive peak forward
current
non-repetitive peak
forward current
Parameter
forward voltage
δ = 0.5 ; t
p
= 25 μs; T
mb
≤ 78 °C;
square-wave pulse
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave pulse;
Symbol
V
F
Conditions
I
F
= 100 A; T
j
= 25 °C;
Fig. 6
I
F
= 100 A; T
j
= 150 °C;
Fig. 6
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/μs;
T
j
= 25 °C;
Fig. 7
-
-
90
ns
Min
-
-
Static characteristics
2.8
2.2
3.3
-
V
V
Conditions
Values
1200
100
200
900
1000
Typ
Max
Unit
V
A
A
A
A
Unit
Absolute maximum rating
WeEn Semiconductors
BYC100W-1200P
Hyperfast power diode
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
mb
K
A
mb
cathode
anode
mounting base; connected to
cathod
Simplified outline
Graphic symbol
K
A
001aaa020
K
A
TO247-2L
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BYC100W-1200P
TO247-2L
Description
Version
Plastic single-ended through-hole package; heatsink mounted;1 TO247-2L
mounting hole; 2 leads TO-247
7. Marking
Table 4. Marking codes
Type number
BYC100W-1200P
Marking codes
BYC100W-1200P
BYC100W-1200P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
10 January 2018
2 / 10
WeEn Semiconductors
BYC100W-1200P
Hyperfast power diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average forward current
repetitive peak forward
current
non-repetitive peak
forward current
storage temperature
junction temperature
DC
δ = 0.5 ; square-wave pulse; T
mb
≤ 78 °C;
Fig. 1; Fig. 2; Fig. 3
δ = 0.5 ; t
p
= 25 μs; T
mb
≤ 78 °C;
square-wave pulse
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave pulse;
T
stg
T
j
Conditions
Values
1200
1200
1200
100
200
900
1000
-65 to 175
175
Unit
V
V
V
A
A
A
A
°C
°C
P
tot
(W)
400
320
0.2
240
160
80
0
0.1
0.5
480
asf15-001
δ=1
P
tot
(W)
300
2.2
240
180
120
60
0
2.8
4.0
360
asf15-002
a = 1.57
1.9
0
30
60
90
120
150
I
F(AV)
(A)
0
20
40
60
80
100
I
F(AV)
(A)
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 1.814 V; R
s
= 0.0071 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values
a = form factor = I
F(RMS)
/ I
F(AV)
Vo = 1.814 V; Rs = 0.0071 Ω
Fig. 2. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values
BYC100W-1200P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
10 January 2018
3 / 10
WeEn Semiconductors
BYC100W-1200P
Hyperfast power diode
I
F(AV)
(A)
100
80
60
40
20
0
-50
120
78°C
asf15-003
I
FSM
(A)
10
4
asf15-004
10
3
10
2
I
F
I
FSM
t
0
50
100
150
200
T
mb
(°C)
10
10
-5
t
p
T
j(init)
= 25 °C max
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3. Forward current as a function of mounting base
temperature; maximum values
Fig. 4. Non-repetitive peak forward current as a function
of pulse width; sinusoidal waveform; maximum values
BYC100W-1200P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
10 January 2018
4 / 10
WeEn Semiconductors
BYC100W-1200P
Hyperfast power diode
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
R
th(j-mb)
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient free air
Conditions
Fig. 5
Min
-
Typ
-
Max
0.3
Unit
K/W
R
th(j-a)
in free air
-
45
-
K/W
Z
th(j-mb)
(K/W)
1
asf15-005
10
-1
10
-2
δ = 0.5
δ = 0.3
δ = 0.1
δ = 0.05
δ = 0.02
δ = 0.01
single pulse
P
δ=
t
p
T
10
-3
t
p
10
-3
10
-2
10
-1
1
t
T
t
p
(s)
10
10
-4
10
-6
10
-5
10
-4
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BYC100W-1200P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
10 January 2018
5 / 10
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