VS-8DKH02-M3
www.vishay.com
Vishay Semiconductors
Hyper Fast Rectifier, 2 x 4 A FRED Pt
®
FEATURES
• Hyper fast recovery time, reduced Q
rr
, and soft
recovery
1
2
3
8
7
6
5
4
• 175 °C maximum operating junction temperature
• Specific for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1 per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
FlatPAK 5 x 6
1, 2
3, 4
7, 8
5, 6
DESCRIPTION / APPLICATIONS
State of the art hyper fast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyper fast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr (typ.)
T
J
max.
Diode variation
FlatPAK 5 x 6
2x4A
200 V
0.7 V
25 ns
175 °C
Separated cathode
These devices are intended for use in snubber, boost,
piezo-injection, as high frequency rectifiers, and
freewheeling diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
MECHANICAL DATA
Case:
FlatPAK 5 x 6
Molding compound meets UL 94 V-0 flamming rating
Base P/N-M3 - halogen-free, RoHS-compliant
Terminals:
matte tin plated
J-STD-002 and JESD 22-B102
leads,
solderable
per
M3 suffix meets JESD 201 class 2 whisker test
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per device
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
Solderpad
= 170 °C, DC
T
Solderpad
= 169 °C, D = 0.5
T
J
= 25 °C, 10 ms sinusoidal pulse
TEST CONDITIONS
VALUES
200
8
173
87
-55 to +175
°C
A
UNITS
V
Non-repetitive peak surge current
Operating junction and storage temperatures
Revision: 04-May-17
Document Number: 96090
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8DKH02-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage, per diode
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
TEST CONDITIONS
I
R
= 100 μA
I
F
= 4 A
I
F
= 4 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
MIN.
200
-
-
-
-
-
TYP.
-
0.87
0.7
-
7
19
MAX.
-
0.96
0.78
2
80
-
μA
pF
V
UNITS
Reverse leakage current, per diode
Junction capacitance
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 4 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
-
TYP.
20
-
17
29
2.1
4
18
60
MAX.
-
25
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Thermal resistance, junction to ambient, per diode
Thermal resistance, junction to case, per diode
SYMBOL
T
J
, T
Stg
R
thJA (1)(2)
R
thJC (3)
TEST CONDITIONS
MIN.
-55
-
-
TYP.
-
89
1.8
MAX.
175
103
2.1
UNITS
°C
°C/W
Notes
(1)
The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/ R
D
J
thJA
(2)
Free air, mounted or recommended copper pad area; thermal resistance R
thJA
- junction to ambient
(3)
Mounted on infinite heatsink
Revision: 04-May-17
Document Number: 96090
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8DKH02-M3
www.vishay.com
Vishay Semiconductors
100
T
J
= 175 °C
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (μA)
10
1
T
J
= 150 °C
10
T
J
= 175 °C
T
J
= 125 °C
0.1
0.01
T
J
= 25 °C
0.001
0.0001
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
50
100
150
200
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
100
C
T
- Junction Capacitance (pF)
10
0
50
100
150
200
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1000
Z
th
- Thermal Impedance (°C/W)
100
Junction to ambient
10
Junction to case
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 04-May-17
Document Number: 96090
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8DKH02-M3
www.vishay.com
200
40
35
T
c
= 170 °C
R
thJC
= 1.8 °C/W
30
125 °C
Vishay Semiconductors
Allowable Case Temperature (°C)
180
160
140
120
100
80
60
40
20
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
T
c
= 28 °C
R
thJA
= 89 °C/W
t
rr
(ns)
25
20
15
10
5
100
1000
25 °C
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
5
4.5
RMS limit
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
100
90
80
70
125 °C
Average Power Loss (W)
4
3.5
Q
rr
(nC)
3
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
6
DC
D = 0.01
D = 0.05
D = 0.1
D = 0.2
D = 0.5
60
50
40
30
20
10
0
100
1000
25 °C
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
(3)
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 04-May-17
Document Number: 96090
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8DKH02-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
8
-
-
-
8
2
D
3
K
4
H
5
02
6
-M3
7
Vishay Semiconductors product
Current rating (8 = 8 A)
Circuit configuration:
D = separated cathode
-
-
-
-
K = FlatPAK package
Process type,
H = hyper fast recovery
Voltage code (02 = 200 V)
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(example)
PREFERRED P/N
VS-8DKH02-M3/H
VS-8DKH02-M3/I
UNIT WEIGHT
(g)
0.10
0.10
PREFERRED PACKAGE CODE
H
I
BASE QUANTITY
1500
6000
PACKAGING DESCRIPTION
7"diameter plastic tape and reel
13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?96056
www.vishay.com/doc?96059
www.vishay.com/doc?88869
Revision: 04-May-17
Document Number: 96090
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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